Evidence of Filamentary Switching in Oxide-based Memory Devices via Weak Programming and Retention Failure Analysis

Younis, Adnan; Chu, Dewei; Li, Sean

doi:10.1038/srep13599

Cited by 38 publications

(19 citation statements)

References 34 publications

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“…Most resistive random‐access memory (RRAM) devices are based on a plethora of inorganic materials, including binary oxides, perovskite oxides, nitrides, and chalcogenides. [ 238–247 ] Recently, the emerging perovskites are considered as competitive materials for low cost wafer‐scale [ 248 ] and highly mechanical‐flexible RRAM devices. [ 249 ] The most common perovskite used for RRAM applications are 3D perovskites including MAPbI 3 , [ 22,225,227,235,250–259 ] MAPbCl 3 , MAPbBr 3 , [ 260,261 ] and CsPbBr 3 .…”

Section: Rs Memories Based On Halide Perovskitesmentioning

confidence: 99%

Halide Perovskites: A New Era of Solution‐Processed Electronics

et al. 2021

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Organic–inorganic mixed halide perovskites have emerged as an excellent class of materials with a unique combination of optoelectronic properties, suitable for a plethora of applications ranging from solar cells to light‐emitting diodes and photoelectrochemical devices. Recent works have showcased hybrid perovskites for electronic applications through improvements in materials design, processing, and device stability. Herein, a comprehensive up‐to‐date review is presented on hybrid perovskite electronics with a focus on transistors and memories. These applications are supported by the fundamental material properties of hybrid perovskite semiconductors such as tunable bandgap, ambipolar charge transport, reasonable mobility, defect characteristics, and solution processability, which are highlighted first. Then, recent progresses on perovskite‐based transistors are reviewed, covering aspects of fabrication process, patterning techniques, contact engineering, 2D versus 3D material selection, and device performance. Furthermore, applications of perovskites in nonvolatile memories and artificial synaptic devices are presented. The ambient instability of hybrid perovskites and the strategies to tackle this bottleneck are also discussed. Finally, an outlook and opportunities to develop perovskite‐based electronics as a competitive and feasible technology are highlighted.

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Section: Rs Memories Based On Halide Perovskitesmentioning

confidence: 99%

Halide Perovskites: A New Era of Solution‐Processed Electronics

et al. 2021

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“…As it can go through repeatable redox (Ce +3 /Ce +4 ) cycles based on reduction of cerium from Ce +4 to Ce +3 . Importance of CeO 2 is not only due to accepting/discharging oxygen ions but also due to the valency change between Ce +4 to Ce +3 states91011.…”

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confidence: 99%

Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered CeO2/Ti/CeO2 Resistive Switching Devices by Changing Top Electrode Material

Rana

Akbar

Ismail

et al. 2017

Sci Rep

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Resistance switching characteristics of CeO2/Ti/CeO2 tri-layered films sandwiched between Pt bottom electrode and two different top electrodes (Ti and TaN) with different work functions have been investigated. RRAM memory cells composed of TaN/CeO2/Ti/CeO2/Pt reveal better resistive switching performance instead of Ti/CeO2/Ti/CeO2/Pt memory stacks. As compared to the Ti/CeO2 interface, much better ability of TaN/CeO2 interface to store and exchange plays a key role in the RS performance improvement, including lower forming/SET voltages, large memory window (~102) and no significant data degradation during endurance test of >104 switching cycles. The formation of TaON thinner interfacial layer between TaN TE and CeO2 film is found to be accountable for improved resistance switching behavior. Partial charge density of states is analyzed using density functional theory. It is found that the conductive filaments formed in CeO2 based devices is assisted by interstitial Ti dopant. Better stability and reproducibility in cycle-to-cycle (C2C) resistance distribution and Vset/Vreset uniformity were achieved due to the modulation of current conduction mechanism from Ohmic in low field region to Schottky emission in high field region.

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“…In fact, there are many factors that affect the formation and disruption of conductive filaments, including electrode size, electrode activity, and functional layer thickness . On the other hand, different materials have different storage mechanisms for memory devices.…”

Section: Filament Mechanisms Of Rram Devicesmentioning

confidence: 99%

Overview of Resistive Random Access Memory (RRAM): Materials, Filament Mechanisms, Performance Optimization, and Prospects

Wang

Yan

2019

Physica Rapid Research Ltrs

131

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Because conventional nonvolatile memory is limited by process technology and physical size, resistive random access memory (RRAM) gradually enters the field of view due to its simple structure, fast program/erase speed, low power consumption, and so on. This review article summarizes the materials, filament mechanisms, performance optimization, and application prospects of RRAM structures to provide readers with a reference for future investigation. The filament mechanisms, which involve the electrochemical metallization mechanism (ECM), valence change mechanism (VCM), and thermochemical mechanism (TCM), of RRAM devices are particularly highlighted. The parameters that determine the RRAM characteristics such as operating voltages, ON/OFF ratio, endurance, and data retention are improved by incorporating the three methods: 1) “interface engineering”, 2) element doping of functional materials, and 3) introduction of low‐dimensional materials. In the last section, a brief introduction to the future RRAM application prospects and challenges is provided.

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Evidence of Filamentary Switching in Oxide-based Memory Devices via Weak Programming and Retention Failure Analysis

Cited by 38 publications

References 34 publications

Halide Perovskites: A New Era of Solution‐Processed Electronics

Halide Perovskites: A New Era of Solution‐Processed Electronics

Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered CeO2/Ti/CeO2 Resistive Switching Devices by Changing Top Electrode Material

Overview of Resistive Random Access Memory (RRAM): Materials, Filament Mechanisms, Performance Optimization, and Prospects

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