Evidence of Al induced conducting filament formation in Al/amorphous silicon/Al resistive switching memory device

Abstract

We demonstrated that an Al/p-type amorphous silicon (p-a-Si)/Al switching device exhibits stable, nonvolatile resistive switching characteristics as well as reliable data retention at 85 °C. It is directly observed that the conducting filament is created after electroforming and incorporates the top metal migrated or diffused into a-Si layer. In addition, by analyzing the constitution of the conducting filament, we investigated the microscopic nature of the conducting filament. These results suggest that the Al/p-a-Si/Al device has potential for future nonvolatile memory applications.

Probing the electrical switching of a memristive optical antenna by STEM EELS

“…Cross-point junctions are among the most compact and densely integrated electronic devices at 10 11 devices per square centimetre 31 . This architecture has already seen widespread use in molecular electronics, nonvolatile memory 32 33 and most recently memristive logic elements have been used for computation 34 35 36 . Most of these devices rely on the electric-field induced transport of ionic species to reversibly grow and dissolve a nanoscale conductive filament.…”

Intrinsic memristance mechanism of crystalline stoichiometric Ge2Sb2Te5

“…Since they were first physically realized in a Pt/TiO2/Pt device demonstrated by Hewlett-Packard Laboratories, 2 memristors, and memristive devices have attracted extensive research attention for their prospective applications as nonvolatile memories, 3,4 neuromorphic devices, 5-7 and logic devices. 8 [19][20][21] ZnS-SiO 2 , 22 magnetic tunnel junctions, 7,23 and organic materials. 24,25 Different physical mechanisms have been proposed to interpret the memristive behaviors, such as electronic barrier modulation from migration of oxygen vacancies, 6,[10][11][12]23 formation and annihilation of conducting filaments via diffusion of oxygen vacancies 3,16 or metal ions from electrodes, [13][14][15][20][21][22] voltage-controlled domain configuration, 17 and trapping of charge carriers.…”

“…8 [19][20][21] ZnS-SiO 2 , 22 magnetic tunnel junctions, 7,23 and organic materials. 24,25 Different physical mechanisms have been proposed to interpret the memristive behaviors, such as electronic barrier modulation from migration of oxygen vacancies, 6,[10][11][12]23 formation and annihilation of conducting filaments via diffusion of oxygen vacancies 3,16 or metal ions from electrodes, [13][14][15][20][21][22] voltage-controlled domain configuration, 17 and trapping of charge carriers. 18,19 However, it is worth noting that the memristance of an Ovonic chalcogenide device, which was selected by Chua as an example to illustrate the feasibility of his memristor model, 1 has not been investigated until recently.…”

Percolation mechanism through trapping/de-trapping process at defect states for resistive switching devices with structure of Ag/SixC1−x/p-Si

“…[12][13][14] Obviously, the structural properties of the matrix materials are responsible for different physical mechanisms.…”