Percolation mechanism through trapping/de-trapping process at defect states for resistive switching devices with structure of Ag/SixC1−x/p-Si

Liu, Yanhong; Gao, Ping; Jiang, X. L.; Li, La; Zhang, Jialiang; Peng, Wei

doi:10.1063/1.4893016

Cited by 12 publications

(9 citation statements)

References 38 publications

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“…Especially, this kind of discreteness have never been observed in our previous works. 11,12 Fig. 1(d) presents a XPS of as-grown Al x O y films after Ar-etch cleaning, in which the peaks for Al 2p and O 1s within Al-O bond are at 76.4 eV and 532.7 eV, separately.…”

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confidence: 97%

“…The values of different m correspond to different carrier transport mechanism, as we discussed in our previous publication. 11 When the applied voltage is less than 0.1 V in the OFF state, the current is proportional to the applied voltage, and can be ascribed to the drift of a small number of free carriers; for the applied voltage increasing from 0.1 V to 2.8 V, m is 2.24, which corresponds to the trap-assisted SCLC. 26 In this region, the V o are charged by the injected electrons and the charged V o distribute all over the Al x O y dielectric layer, which provides space charges for the trap-limited SCLC.…”

mentioning

confidence: 99%

“…Although it relates with defect states, the sub-band mechanism is different from the percolation mechanism reported in our previous publications. 11,12 Additionally, there are seldom reports about the fundamental switching properties of RS-NVM based on sub-band mechanism.…”

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confidence: 99%

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Sub-band transport mechanism and switching properties for resistive switching nonvolatile memories with structure of silver/aluminum oxide/p-type silicon

Liu

Wang

et al. 2015

Applied Physics Letters

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In this paper, we discuss a model of sub-band in resistive switching nonvolatile memories with a structure of silver/aluminum oxide/p-type silicon (Ag/AlxOy/p-Si), in which the sub-band is formed by overlapping of wave functions of electron-occupied oxygen vacancies in AlxOy layer deposited by atomic layer deposition technology. The switching processes exhibit the characteristics of the bipolarity, discreteness, and no need of forming process, all of which are discussed deeply based on the model of sub-band. The relationships between the SET voltages and distribution of trap levels are analyzed qualitatively. The semiconductor-like behaviors of ON-state resistance affirm the sub-band transport mechanism instead of the metal filament mechanism.

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confidence: 97%

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confidence: 99%

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Sub-band transport mechanism and switching properties for resistive switching nonvolatile memories with structure of silver/aluminum oxide/p-type silicon

Liu

Wang

et al. 2015

Applied Physics Letters

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“…To enable the SiC-based memristor to integrate into the brain-inspired chip and efficiently deal with the massive and diverse data, the uniformity of the switching parameters such as R ON , R OFF, V SET , and V RESET need to be improved in the successive switching cycles. Exploring effective ways to improve the switching uniformity of the SiC memristor is highly demanded [15][16][17][18][19][20][21][22][23][24].…”

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confidence: 99%

Artificial Synapse Consisted of TiSbTe/SiCx:H Memristor with Ultra-high Uniformity for Neuromorphic Computing

Chen

Leng

et al. 2022

Nanomaterials

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To enable a-SiCx:H-based memristors to be integrated into brain-inspired chips, and to efficiently deal with the massive and diverse data, high switching uniformity of the a-SiC0.11:H memristor is urgently needed. In this study, we introduced a TiSbTe layer into an a-SiC0.11:H memristor, and successfully observed the ultra-high uniformity of the TiSbTe/a-SiC0.11:H memristor device. Compared with the a-SiC0.11:H memristor, the cycle-to-cycle coefficient of variation in the high resistance state and the low resistance state of TiSbTe/a-SiC0.11:H memristors was reduced by 92.5% and 66.4%, respectively. Moreover, the device-to-device coefficient of variation in the high resistance state and the low resistance state of TiSbTe/a-SiC0.11:H memristors decreased by 93.6% and 86.3%, respectively. A high-resolution transmission electron microscope revealed that a permanent TiSbTe nanocrystalline conductive nanofilament was formed in the TiSbTe layer during the DC sweeping process. The localized electric field of the TiSbTe nanocrystalline was beneficial for confining the position of the conductive filaments in the a-SiC0.11:H film, which contributed to improving the uniformity of the device. The temperature-dependent I-V characteristic further confirmed that the bridge and rupture of the Si dangling bond nanopathway was responsible for the resistive switching of the TiSbTe/a-SiC0.11:H device. The ultra-high uniformity of the TiSbTe/a-SiC0.11:H device ensured the successful implementation of biosynaptic functions such as spike-duration-dependent plasticity, long-term potentiation, long-term depression, and spike-timing-dependent plasticity. Furthermore, visual learning capability could be simulated through changing the conductance of the TiSbTe/a-SiC0.11:H device. Our discovery of the ultra-high uniformity of TiSbTe/a-SiC0.11:H memristor devices provides an avenue for their integration into the next generation of AI chips.

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“…Clearly, the intensity of the resonance peak increases with the reduction of the C/Si ratio from 0.49 to 0.11. It indicates that Si DBs make the main contribution to the defect in SiC x :H films during the chemical vapor deposition. − The Si DBs with high density in the pristine film can form an incomplete conductive pathway leading to the forming-free performance of SiC x :H films. In Figure b, the Si–C stretching, Si–H wagging, Si–H stretching, and C–H stretching modes can be found, which are located at 780, 1000, 2000, and 2900 cm –1 , respectively .…”

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confidence: 99%

Tunable Si Dangling Bond Pathway Induced Forming-Free Hydrogenated Silicon Carbide Resistive Switching Memory Device

Chen

Len

et al. 2020

J. Phys. Chem. Lett.

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With the coming of the big data age, the resistive switching memory (RSM) of three-dimensional (3D) high density shows a significant application in information storage and processing due to its simple structure and size-scalable characteristic. However, an electrical initialization process makes the peripheral circuits of 3D integration too complicated to be realized. Here a new forming-free SiC x :H-based device can be obtained by tuning the Si dangling bond conductive channel. It is discovered that the forming-free behavior can be ascribed to the Si dangling bonds in the as-deposited SiC x :H films. By tuning the number of Si dangling bonds, the forming-free SiC x :H RSM exhibits a tunable memory window. The fracture and connection of the Si dangling bond conduction pathway induces the switching from the high-resistance state (HRS) to the low-resistance state (LRS). Our discovery of forming-free SiC x :H resistive switching memory with tunable pathway opens a way to the realization of 3D high-density memory.

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Percolation mechanism through trapping/de-trapping process at defect states for resistive switching devices with structure of Ag/SixC1−x/p-Si

Cited by 12 publications

References 38 publications

Sub-band transport mechanism and switching properties for resistive switching nonvolatile memories with structure of silver/aluminum oxide/p-type silicon

Sub-band transport mechanism and switching properties for resistive switching nonvolatile memories with structure of silver/aluminum oxide/p-type silicon

Artificial Synapse Consisted of TiSbTe/SiCx:H Memristor with Ultra-high Uniformity for Neuromorphic Computing

Tunable Si Dangling Bond Pathway Induced Forming-Free Hydrogenated Silicon Carbide Resistive Switching Memory Device

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