Evidence from photoluminescence studies for a low-energy absorption tail in chalcogenide glasses and crystals

Street, R. A.; Searle, T. M.; Austin, I. G.

doi:10.1080/14786437508219966

Cited by 27 publications

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References 10 publications

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“…The model used here, called that of « charged dangling bonds », was introduced originally by Street and Mott to account for observations on photoluminescence in amorphous and crystalline As2Se3 by Street, Searle and Austin [45] and by other workers (for a review see Street) [46]. To observe photoluminescence one must illuminate at low temperatures in the tail of the absorption band.…”

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Electrons in glass

Mott

1977

Rev. Phys. Appl. (Paris)

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2014 An outline is given of some of the steps which in the last ten years have led to an understanding of many of the properties of conduction and valence bands in non-crystalline materials. The concept of a mobility edge is described and some of the experimental evidence for its existence. A discussion is given of the nature of states in the gap, thought of as deep donors or acceptors. These pin the Fermi energy and act as recombination centres. A distinction is made between materials such as silicon or germanium with fourfold co-ordination and those like As2Te3 or SiO2, where for the chalcogen (Te or O) co-ordination is twofold; for the former an electron in a deep state produces only moderate distortion of the lattice, for the latter the distortion is large. Photoluminescence and other properties of chalcogenides ave discussed in terms of a recent model of charged dangling bonds. It is suggested that free holes in As2Te3 and As2Se3 are not self-trapped but that in SiO2 they are. Finally the nature of the optical absorption edge in SiO2 is contrasted with that in a soda glass in terms of a model of self-trapped excitons. REVUE DE PHYSIQUE APPLIQUÉE TOME 12, MAI 1977, tant school under B. T. Kolomiets in the loffe Institute in Leningrad worked for a number of years on the chalcogenide glasses, of which As2Te3 and the more complicated STAG glasses (e. g. Si-Te-As-Ge) are typical. These are transparent in the near infra-red and are semiconductors, but a striking fact established by Kolomiets [2] is that they cannot normally be doped ; there seem to be no shallow donors or acceptors and the conductivity, unlike that of crystals, does not depend sharply on composition. Physicists who started to think about these materials were reminded

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“…-Luminescence emission, excitation spectrum and absorption coefhcient at 10 K of amorphous selenium (Street et al. [45]). centres, and that the radiation produces a trapped hole, or in other words a D centre, with an electron very weakly bound to it.…”

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Electrons in glass

Mott

1977

Rev. Phys. Appl. (Paris)

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X-ray induced paramagnetic states and luminescnece in As2S3 and As2Se3

Moskalonov

Zakis

1978

Phys. Stat. Sol. (a)

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Optical absorption and electron spin resonance (ESR) attributed to X‐ray induced localized paramagnetic states are studied in glassy As2Se3 and As2Se3 for T ≧ 77 K. The production of induced paramagnetic states is not detected in crystalline As2S3. X‐ray irradiation of a crystal at 77 K excites luminescence with the same spectrum as that for photoluminescence. No X‐ray excited luminescence is observed in glasses at 77 K. It is shown that a unified explanation for the data can be given on the basis of the Mott‐Davis‐Street model.

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