Thin films of type I clathrate material, Ba 8 Ga 16 Ge 30, have been grown using the pulsed laser ablation technique. These materials hold the potential for thermoelectric applications. Films have been deposited on a variety of substrates including silicon, quartz, sapphire, glass substrates, and YSZ cubic zirconium. Optimal crystalline films were obtained at a growth temperature of 400 o C and laser fluences at 3 J/cm 2 and above. The optimum laser fluence to produce stoichiometric films with the lowest particle density has been determined. The low ablation threshold for the UV wavelength leads to the particulate ejection during laser-target interaction. Excitation of the UV laser generated plasma by a second pulsed IR laser further reduced particulates and produced broader expansion profiles leading to large area uniform films.