Evidence for the formation of two types of oxygen interstitials in neutron-irradiated α-Al2O3 single crystals

Lushchik, A.; Kuzovkov, V. N.; Kotomin, Eugene A.; Prieditis, G.; Seeman, V.; Shablonin, E.; Vasil’chenko, E.; Попов, А. И.

doi:10.1038/s41598-021-00336-0

Cited by 16 publications

(5 citation statements)

References 70 publications

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“…The relationship between the activation energy E a of a certain kinetic process and the pre-exponential X, Equation ( 9), is well known in the chemical literature as the Meyer-Neldel rule [35,36]. In the case of radiation defects, the fulfillment of this relation was confirmed by us for a group of ionic crystals (Al 2 O 3 , MgO, MgF 2 , MgAl 2 O 4 ) [33,37]. Note, however, that in the paper [33] we can talk about proof, since statistics based on a large number of independent experiments were used for each material.…”

Section: Resultsmentioning

confidence: 78%

The Annealing Kinetics of Defects in CVD Diamond Irradiated by Xe Ions

Kotomin,

Kuzovkov,

Lushchik

et al. 2024

Crystals

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The radiation-induced optical absorption at 1.5–5.5 eV (up to the beginning of fundamental absorption) has been analyzed in CVD diamond disks exposed to 231-MeV 132Xe ions with four fluences from 1012 to 3.8 × 1013 cm−2. The 5 mm diameter samples (thickness 0.4 mm) were prepared by Diamond Materials, Freiburg (Germany); the average grain size at growth site was around 80 μm; and the range of xenon ions was R = 11.5 μm. The intensity of several bands grows with ion fluence, thus confirming the radiation-induced origin of the defects responsible for these bands. The recovery of radiation damage has been investigated via isochronal (stepwise) thermal annealing procedure up to 650 °C, while all spectra were measured at room temperature. Based on these spectra, the annealing kinetics of several defects, in particular carbon vacancies (GR1 centers with a broad band ~2 eV) and complementary C-interstitial-related defects (~4 eV), as well as impurity-related complex defects (narrow bands around 2.5 eV) have been constructed. The experimental kinetics have also been analyzed in terms of the diffusion-controlled bimolecular reactions. The migration energies of tentatively interstitial atoms (mobile components in recombination process) are obtained, and their dependence on the irradiation fluences is discussed.

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Section: Resultsmentioning

confidence: 78%

The Annealing Kinetics of Defects in CVD Diamond Irradiated by Xe Ions

Kotomin,

Kuzovkov,

Lushchik

et al. 2024

Crystals

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show abstract

“…The results obtained by us ( Figure 2 ) clearly indicate the relationship between the decrease in the intensity of the ESR signal of F + -centers at T = 375–550 K and the emission of TL peaks in the indicated temperature range, which confirms the assumption made by the authors of [ 45 , 46 , 47 ]. It is well known that an alternative mechanism for annealing radiation-induced F -type defects in oxides is the recombination of oxygen vacancies with interstitial oxygen, the diffusion of which becomes possible when the crystal is heated [ 48 , 49 , 50 ]. Previously, the authors of [ 51 ] showed that in zirconium oxide irradiated with neutrons (E > 0.1 MeV), the diffusion of interstitial oxygen becomes possible at temperatures above 500–600 K. In the samples studied by us, a decrease in the concentration of F + centers is observed at lower temperatures of 375–550 K, which testifies in favor of the proposed mechanism for the destruction of F + centers associated with their ability to capture the charge carriers released from traps that cause TL peaks.…”

Section: Resultsmentioning

confidence: 99%

Paramagnetic Defects and Thermoluminescence in Irradiated Nanostructured Monoclinic Zirconium Dioxide

et al. 2022

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The ESR spectra of nanostructured samples of monoclinic ZrO2 irradiated by electrons with energies of 130 keV, 10 MeV, and by a beam of Xe ions (220 MeV) have been studied. It has been established that irradiation of samples with electrons (10 MeV) and ions leads to the formation of radiation-induced F+ centers in them. Thermal destruction of these centers is observed in the temperature range of 375–550 K for electron-irradiated and 500–700 K for ion-irradiated samples. It is shown that the decrease in the concentration of F+ centers is associated with the emptying of traps responsible for thermoluminescence (TL) peaks in the specified temperature range. In the samples irradiated with an ion beam, previously unidentified paramagnetic centers with g = 1.963 and 1.986 were found, the formation of which is likely to involve Zr3+ ions and oxygen vacancies. Thermal destruction of these centers occurs in the temperature range from 500 to 873 K.

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“…Thus, we come to the final result (see also Refs. [34][35][36][37][38][39]) when the theory can already be compared with experiment.…”

Section: Analysis Of Kineticsmentioning

confidence: 99%

The Annealing Kinetics of Defects in CVD Diamond Irradiated by Xe Ions

Kotomin,

Kuzovkov,

Lushchik

et al. 2024

Preprint

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The radiation-induced optical absorption at 1.5-5.5 eV (up to the beginning of fundamental absorption) has been analyzed in CVD diamond disks exposed to 231-MeV 132Xe ions with four fluences from 1012 to 3.81013 cm-2. The 5-mm diameter samples (thickness 0.4 mm) were prepared by Diamond Materials, Freiburg (Germany), average grain size at growth site was around 80 m, the range of xenon ions was R= 11.5 m. The intensity of several bands grows with ion fluence thus confirming radiation-induced origin of the defects responsible for these bands. The recovery of radiation damage has been investigated via isochronal (stepwise) thermal annealing procedure up to 650°C, while all spectra were measured at room temperature. Based on these spectra, the annealing kinetics of several defects, in particular carbon vacancies (GR1 centers with a broad band 2 eV) and complementary C-interstitial-related defects ( 4 eV), as well as vacancies located nearby nitrogen substitutional atoms (narrow bands around 2.5 eV) have been constructed. The experimental kinetics have also been analyzed in terms of the diffusion-controlled bimolecular reactions. The migration energies of tentatively interstitial atoms (mobile components in recombination process) are obtained, their dependence on the irradiation fluences is discussed.

show abstract

Evidence for the formation of two types of oxygen interstitials in neutron-irradiated α-Al2O3 single crystals

Cited by 16 publications

References 70 publications

The Annealing Kinetics of Defects in CVD Diamond Irradiated by Xe Ions

The Annealing Kinetics of Defects in CVD Diamond Irradiated by Xe Ions

Paramagnetic Defects and Thermoluminescence in Irradiated Nanostructured Monoclinic Zirconium Dioxide

The Annealing Kinetics of Defects in CVD Diamond Irradiated by Xe Ions

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