The Annealing Kinetics of Defects in CVD Diamond Irradiated by Xe Ions

Abstract

The radiation-induced optical absorption at 1.5–5.5 eV (up to the beginning of fundamental absorption) has been analyzed in CVD diamond disks exposed to 231-MeV 132Xe ions with four fluences from 1012 to 3.8 × 1013 cm−2. The 5 mm diameter samples (thickness 0.4 mm) were prepared by Diamond Materials, Freiburg (Germany); the average grain size at growth site was around 80 μm; and the range of xenon ions was R = 11.5 μm. The intensity of several bands grows with ion fluence, thus confirming the radiation-induced origin of the defects responsible for these bands. The recovery of radiation damage has been investigated via isochronal (stepwise) thermal annealing procedure up to 650 °C, while all spectra were measured at room temperature. Based on these spectra, the annealing kinetics of several defects, in particular carbon vacancies (GR1 centers with a broad band ~2 eV) and complementary C-interstitial-related defects (~4 eV), as well as impurity-related complex defects (narrow bands around 2.5 eV) have been constructed. The experimental kinetics have also been analyzed in terms of the diffusion-controlled bimolecular reactions. The migration energies of tentatively interstitial atoms (mobile components in recombination process) are obtained, and their dependence on the irradiation fluences is discussed.