1968
DOI: 10.1063/1.1651909
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EVIDENCE FOR SUPERRADIANCE IN THE RECOMBINATION RADIATION FROM CdTe

Abstract: Linewidth narrowing attributed to superradiance has been observed in near bandgap radiation due to the recombination of impact ionized carriers in n-type CdTe at room temperature. The light emission was associated with a current breakdown that occurred at a threshold field of 12,000 V/cm in highly compensated n-type samples.

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Cited by 4 publications
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“…1) it can have a strong luminescence emission. Stimulated emission has been excited by optical pumping [38], by electron beam bombardment [39] and by impact ionization [40]. It can be doped both n-and p-type so the possibility of making lasers by minority carrier injection has been attempted [41] but has not been successful to date.…”
mentioning
confidence: 99%
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“…1) it can have a strong luminescence emission. Stimulated emission has been excited by optical pumping [38], by electron beam bombardment [39] and by impact ionization [40]. It can be doped both n-and p-type so the possibility of making lasers by minority carrier injection has been attempted [41] but has not been successful to date.…”
mentioning
confidence: 99%
“…9. -Spectral narrowing for double-photon excitation of CdTe (after Basov et al [38] [40] have seen line narrowing occurring in n-type CdTe at room temperature. The recombination light emission was associated with breakdown at 12 kV/cm by impact ionization (Fig.…”
mentioning
confidence: 99%
“…The modified Bridgman method was developed primarily to grow high-resistivity material for gamma detectors and optical modulators. It has been useful for growing material for the study of impact ionization (21) and superradiance (22) in CdTe where reproducibility is important. An example of this is in Fig.…”
Section: Discussionmentioning
confidence: 99%
“…Light stimulated emission [49] and electron beam stimulated emission [50] has also been observed as well as recombination radiation [51 ] at high bias levels. It appears then that CdTe and its alloys could have significant application as electroluminescent materials in competition with GaAs and other III-V's, if indeed the killer and contact problems could be overcome.…”
Section: And Similarmentioning
confidence: 99%