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Weinstein, B. A.; Stambach, S. R.; Ritter, T. M.; Maclean, J.O.; Wallis, D. J.

doi:10.1103/physrevb.68.035336

Cited by 27 publications

(11 citation statements)

References 56 publications

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“…24 Now we turn to discussion of the pressure coefficient of bands A and B. The pressure coefficient of band A is 45 meV/ GPa in the pressure range of 0 -1.4 GPa, which is in agreement with that reported by Ma et al 8 for GaNAs alloy with a nitrogen concentration of 0.1% ͑40 meV/ GPa͒, Klar et al 28 with N 0.095%, and Weinstein et al 15 with N 0.25% ͑46 meV/ GPa͒ in the pressure range of 0 -1.5 GPa. On the other hand, the pressure coefficient of band B is 67 meV/ GPa, which is much smaller than the measured results of 82 meV/ GPa for N = 0.1% ͑Ref.…”

Section: B Photoluminescence Under Pressuresupporting

confidence: 85%

“…Emissions from the nitrogen pair states NN 3 and NN 4 and the isolated nitrogen state N x have also been observed by the application of pressure. Weinstein et al 15 have observed a pressure-induced NN 3 structure in the GaAs 1−x N x alloy with x = 0.25% but have not found any other structures in a sample with 0.4% nitrogen in the pressure range of 0 -6.2 GPa. Kent and Zunger 16 predicted that the localized-to-delocalized transition occurs at x c ϳ 0.6% for GaAs 1−x N x , according to their theory.…”

Section: Introductionmentioning

confidence: 98%

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Different temperature and pressure behavior of band edge and N-cluster emissions inGaAs0.973Sb0.022N0.005

Wang¹,

Su²,

Ding³

et al. 2006

Phys. Rev. B

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The photoluminescence of GaAs 0.973 Sb 0.022 N 0.005 was investigated at different temperatures, pressures, and excitation powers. Both the alloy band edge and the N-cluster emissions, which show different temperature and excitation power dependences, were observed. The pressure coefficients obtained in the pressure range of 0 -1.4 GPa for the band edge and N-related emissions are 67 and 45 meV/ GPa, respectively. The N-cluster emissions shift to higher energy in the lower pressure range and then begin to redshift at about 8.5 GPa. This redshift is possibly caused by the increase of the x-valley component in the N-related states with increasing pressure. A rapid decrease of the emission intensity of the N-related band was also observed when the pressure exceeded about 8 GPa.

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Section: B Photoluminescence Under Pressuresupporting

confidence: 85%

Section: Introductionmentioning

confidence: 98%

Different temperature and pressure behavior of band edge and N-cluster emissions inGaAs0.973Sb0.022N0.005

Wang¹,

Su²,

Ding³

et al. 2006

Phys. Rev. B

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“…4(b) show that in contrast to GaNAs 1-x the shape of the PL spectrum does not change under pressure, and the PL band shifts at a small rate of only about 15 meV/GPa typical for a localized state. If the situation were similar to that in GaN x As 1-x hydrostatic pressure would lead to a tuning of the energy differences between the direct gap and the localized N-states leading to changes of the PL lineshape under pressure [28,35,36]. Thus the results of Fig.…”

Section: Localized N-states Within the Band Gap (E N < E C )mentioning

confidence: 68%

Hydrostatic pressure experiments on dilute nitride alloys

Klar¹,

Teubert²,

Niebling³

et al. 2006

Physica Status Solidi (b)

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GaN(x)As(1-x) and Ga(1-y)In(y)N(x)As(1-x) are the most prominent members of a novel class of non-amalgamation type semiconductor alloys where a fraction x of the anions of the host (e.g., GaAs or Ga(1-y)In(y)As) is replaced by N isovalent impurity atoms. The localized N-states in GaN(x)As(1-x) and Ga(1-y)In(y)As(1-x) form a series of discrete energy levels (e.g., isolated N-state, N-pairs and higher order N-cluster states) resonant with the conduction band of the host. The effect of the alloying with nitrogen on the bandstructure of GaN(x)As(1-x) and Ga(1-y)In(y)N(x)As(1-x) can be well parameterized using a band-anticrossing (BAC) model, namely, assuming a level repulsion between an effective N-state and the conduction band-edge state. The dependence of several physical properties on nitrogen incorporation can be predicted qualitatively in the framework of this model, e.g., a tremendous increase of the electron effective mass in GaN(x)As(x) with increasing x, a huge cross section for scattering of electrons by N impurities in electronic transport, etc. Most of these predictions can be tested and verified by performing hydrostatic pressure experiments which, within the picture of the BAC model, allow one to tune continuously the energy difference between the host-like conduction band edge and the effective N-level within one and the same specimen. Several examples of this kind will be discussed. Furthermore, we will demonstrate the limitations of the BAC model in the case of GaN(x)P(1-x) and also of GaN(x)As(1-x). In particular, we will show several examples where the description by a single effective N-state fails and that the multiplicity of the N-states needs to be taken into account. Again hydrostatic pressure experiments prove to be a useful and suitable tool for revealing the effects due to N-cluster states. (C) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

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“…Under this condition, the applied pressure can no longer separate the N-related impurity states from the alloy states as distinct levels. The energy levels which different states correspond to cannot be distinguished by pressure [10]. Fig.…”

Section: Physical Model and Discussionmentioning

confidence: 99%

Pressure dependence of the band gap energy for the dilute nitride GaN_xAs_1−x

Zhao

Wei

Sun

et al. 2016

Materials Science-Poland

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A model is developed to describe the pressure dependence of the band gap energy for the dilute nitride GaN x As 1−x . It is found that the sublinear pressure dependence of E − is due to the coupling interaction between E + and E − . We have also found that GaN x As 1−x needs much larger pressure than GaAs to realize the transition from direct to indirect band gap. It is due to two factors. One is the coupling interaction between the E + and E − . The other is that the energy difference between the X conduction band minimum (CBM) and the Γ CBM in GaN x As 1−x is larger than that in GaAs. In addition, we explain the phenomenon that the energy difference between the X CBM and the Γ CBM in GaN x As 1−x is larger than that in GaAs. It is due to the impurity-host interaction.

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Evidence for selective delocalization of N-pair states in diluteGaAs1−xNx

Cited by 27 publications

References 56 publications

Different temperature and pressure behavior of band edge and N-cluster emissions inGaAs0.973Sb0.022N0.005

Different temperature and pressure behavior of band edge and N-cluster emissions inGaAs0.973Sb0.022N0.005

Hydrostatic pressure experiments on dilute nitride alloys

Pressure dependence of the band gap energy for the dilute nitride GaN_xAs_1−x

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Evidence for selective delocalization of N-pair states in diluteGaAs1−xNx

Cited by 27 publications

References 56 publications

Different temperature and pressure behavior of band edge and N-cluster emissions inGaAs0.973Sb0.022N0.005

Different temperature and pressure behavior of band edge and N-cluster emissions inGaAs0.973Sb0.022N0.005

Hydrostatic pressure experiments on dilute nitride alloys

Pressure dependence of the band gap energy for the dilute nitride GaNxAs1−x

Contact Info

Product

Resources

About

Pressure dependence of the band gap energy for the dilute nitride GaN_xAs_1−x