Evidence for capture of holes into resonant states in boron-doped silicon

Abstract

The variation of hole population in the resonant states of B-doped Si excited by sequences of short electric-field pulses has been investigated by the technique of time-resolved step-scan far-infrared spectroscopy. From the variation of the p 3/2 absorptions, we find that the hole population in the ground state decreases continuously with the sequential electric pulses, as a result of the breakdown delay and hole accumulation in long-lived excited states. The measured time-varying spectra of the p 1/2 series have been analyzed and attributed to a significant variation of the hole population in the resonant states. We have also observed a new absorption line at 676 cm −1 which is probably caused by the electric-field induced mixing of the resonant states.

Background impurities and a delta-doped QW. Part I: Center doping

“…2. IBE for the delta-level ε δ is found, as described in section 3.4, as the energy corresponding to zero of the determinant in equation (30).…”

“…Then, later, at the beginning of this century, the renewed interest to the impurities in QWs appeared as a result of the observation of intense THz radiation from Si/SiGe QW structures [27]. The phenomenon was explained [27,28] in the framework of a socalled intra-center inversion scheme [29,30]. All the above written allows one to conclude (and, in our opinion, it is commonly recognized now) that in general the phenomena connected with impurities in QWs are now well understood.…”

Analytical approach to the impurity scattering in quantum wells

“…Our studies of this topic [6,7] led us to attempt to find a rather simple and quick technique for, at least, semiquantitative estimation of the ladder of impurity binding energies.…”