The influence of thermal ionization of an impurity delta-doped layer situated either in the center or on the edge of a quantum well (QW) on impurity binding energy is investigated theoretically for the case of Si0.8Ge0.2/Si QW. It is shown that the Hartree potential created by free electrons and by ionized impurities at high temperatures superimposes on the original (at low temperature) QW energy profile. Resulting new QWs have their own impurity binding energies. It is of interest that energies are nearly the same for center- and edge-doped QWs, contrary to those at low temperatures. The obtained results are explained on the basis of Coulomb’s law when decreasing the mean distance between free electron and impurity atom with temperature involves an increase in the impurity binding energy.
We report the effect of multiple cylinders scattering of electromagnetic plane-wave on formation of high field intensity areas. Our model consists of three cylinders. One of them was basic and the possibility of the existence of high intensity field which can form in its vicinity has been studied. Two values of the radius for basic cylinder were considered: a resonant radius when the so-called whispering gallery modes formed, and non-resonant. It was found that a focal length of photonic nano jets generated at the shadow-side surface of basic cylinder increased (up to two times) compared to the case of a single cylinder. For whispering gallery modes the field intensity also increased up to two times.
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