Evidence for asymmetric rotation of spins in antiferromagnetic exchange-spring

Wang, Y Y; Song, Cheng; Wang, G Y; Zeng, Fei; Pan, Feng

doi:10.1088/1367-2630/16/12/123032

Cited by 25 publications

(27 citation statements)

References 36 publications

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“…The exact value is difficult to obtain, which strongly depends on the film quality and interface properties. The value of <28 nm estimated here could be treated as a general range [21], which is much higher than that of 7.8 nm in IrMn [5,20]. Thus the electrical modulation of AFM moments and the corresponding exchange spring is expected to be deeper in FeMn films.…”

Section: Introductionmentioning

confidence: 53%

“…δ W is estimated to be~28 nm according to A K = / / 2 W , and the typical values of exchange stiffness A and anisotropy constant K for FeMn are 4.1×10 −12 J/m and 1.3×10 4 J/m 3 , respectively [20]. It should be noted that a relatively large scatter of δ W between 9 and 50 nm was reported [21]. The exact value is difficult to obtain, which strongly depends on the film quality and interface properties.…”

Section: Introductionmentioning

confidence: 96%

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Electrical control of antiferromagnetic metal up to 15 nm

Zhang

Yin

Wang

et al. 2016

Sci. China Phys. Mech. Astron.

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Manipulation of antiferromagnetic (AFM) spins by electrical means is on great demand to develop the AFM spintronics with low power consumption. Here we report a reversible electrical control of antiferromagnetic moments of FeMn up to 15 nm, using an ionic liquid to exert a substantial electric-field effect. The manipulation is demonstrated by the modulation of exchange spring in [Co/Pt]/FeMn system, where AFM moments in FeMn pin the magnetization rotation of Co/Pt. By carrier injection or extraction, the magnetic anisotropy of the top layer in FeMn is modulated to influence the whole exchange spring and then passes its influence to the [Co/Pt]/FeMn interface, through a distance up to the length of exchange spring that fully screens electric field. Comparing FeMn to IrMn, despite the opposite dependence of exchange bias on gate voltages, the same correlation between carrier density and exchange spring stiffness is demonstrated. Besides the fundamental significance of modulating the spin structures in metallic AFM via all-electrical fashion, the present finding would advance the development of low-power-consumption AFM spintronics. antiferromagnetic spintronics, electric-field effect, exchange spring, carrier density, ionic liquid PACS number(s): 73.61.At, 75.50.Ee, 75.70.Ak, 85.75.Nn Citation: Electrical control of antiferromagnetic metal up to 15 nm, Sci. China-Phys. Mech.

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Section: Introductionmentioning

confidence: 53%

Section: Introductionmentioning

confidence: 96%

Electrical control of antiferromagnetic metal up to 15 nm

Zhang

Yin

Wang

et al. 2016

Sci. China Phys. Mech. Astron.

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“…Y. Wang et al (2012Wang et al ( , 2014b exploited the thermal stability of antiferromagnet-based systems with out-of-plane anisotropy to further demonstrate room-temperature (antiferromagnetic) tunnel anisotropic magnetoresistance (∼0.2%) and hysteretic behavior for [Pt/Co]/IrMn,FeMn/B/N stacks (see Fig. 31).…”

Section: A Anisotropic Magnetoresistancementioning

confidence: 99%

Antiferromagnetic spintronics

et al. 2018

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Antiferromagnetic materials could represent the future of spintronic applications thanks to the numerous interesting features they combine: they are robust against perturbation due to magnetic fields, produce no stray fields, display ultrafast dynamics, and are capable of generating large magnetotransport effects. Intense research efforts over the past decade have been invested in unraveling spin transport properties in antiferromagnetic materials. Whether spin transport can be used to drive the antiferromagnetic order and how subsequent variations can be detected are some of the thrilling challenges currently being addressed. Antiferromagnetic spintronics started out with studies on spin transfer and has undergone a definite revival in the last few years with the publication of pioneering articles on the use of spin-orbit interactions in antiferromagnets. This paradigm shift offers possibilities for radically new concepts for spin manipulation in electronics. Central to these endeavors are the need for predictive models, relevant disruptive materials, and new experimental designs. This paper reviews the most prominent spintronic effects described based on theoretical and experimental analysis of antiferromagnetic materials. It also details some of the remaining bottlenecks and suggests possible avenues for future research. This review covers both spin-transfer-related effects, such as spin-transfer torque, spin penetration length, domain-wall motion, and "magnetization" dynamics, and spin-orbit related phenomena, such as (tunnel) anisotropic magnetoresistance, spin Hall, and inverse spin galvanic effects. Effects related to spin caloritronics, such as the spin Seebeck effect, are linked to the transport of magnons in antiferromagnets. The propagation of spin waves and spin superfluids in antiferromagnets is also covered.

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“…However, instead of the elusive non-relativistic antiferromagnetic TMR, experiments focused on the relativistic tunnelling AMR (TAMR). 3,8,16,17,19,37 Unlike the antiferromagnetic GMR/TMR 22 , the TAMR devices can operate with only one magnetic electrode facing the tunnel barrier and hence do not rely on the subtle spin-coherent quantuminterference effects.…”

mentioning

confidence: 99%

“…In previous sections we already mentioned examples of metal antiferromagnets which have so far driven much of the research in antiferromagnetic spintronics. Alloys of Ir and Mn are a prime example of metal antiferromagnets gradually progressing from favorable passive exchange-bias materials to active electrodes in TAMR devices, 8,16,17,19 to SHE injectors of spin current controlling adjacent ferromagnets, 59,60 or to sensitive spin detectors.…”

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confidence: 99%

Antiferromagnetic spintronics

et al. 2016

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Antiferromagnetic materials are magnetic inside, however, the direction of their ordered microscopic moments alternates between individual atomic sites. The resulting zero net magnetic moment makes magnetism in antiferromagnets invisible on the outside. It also implies that if information was stored in antiferromagnetic moments it would be insensitive to disturbing external magnetic fields, and the antiferromagnetic element would not affect magnetically its neighbors no matter how densely the elements were arranged in a device. The intrinsic high frequencies of antiferromagnetic dynamics represent another property that makes antiferromagnets distinct from ferromagnets. The outstanding question is how to efficiently manipulate and detect the magnetic state of an antiferromagnet. In this article we give an overview of recent works addressing this question. We also review studies looking at merits of antiferromagnetic spintronics from a more general perspective of spin-ransport, magnetization dynamics, and materials research, and give a brief outlook of future research and applications of antiferromagnetic spintronics.Interesting and useless -this was the common perception of antiferromagnets expressed quite explicitly, for example, in the 1970 Nobel lecture of Louis Néel.1 Connecting to this traditional notion we can define antiferromagnetic spintronics as a field that makes antiferromagnets useful and spintronics more interesting. Below we give an overview of this emerging field whose aim is to complement or replace ferromagnets in active components of spintronic devices.We recall some key physics roots of the field and first concepts of spintronic devices based on antiferromagnetic counterparts of the non-relativistic giantmagnetoresistance and spin-transfer-torque phenomena. 2We then focus on electrical reading and writing of information, combined with robust storage, that can be realized in antiferromagnetic memories via relativistic magnetoresistance and spin torque effects.3,4 Related to these topics is the research of spintronic devices in which antiferromagnets act as efficient generators, detectors, and transmitters of spin currents. This will lead us to studies exploring fast dynamics in antiferromagnets 5 and different types of antiferromagnetic materials. They range from insulators to superconductors. Here we comment also on the relation between crystal antiferromagents and synthetic antiferromagnets, with the latter ones playing an important role in spintronic sensor and memory devices.6 In concluding remarks we outline some of the envisaged future directions of research and potential applications of antiferromagnetic spintronics. Equilibrium properties and magnetic storage in antiferromagnetsThe understanding of equilibrium properties of ferromagnets has been guided by the notion of a global molecular field, introduced by Pierre Weiss.1 The theory starts from the Curie law for paramagnets with the inverse susceptibility proportional to temperature, χ −1 ∼ T . It further assumes that the externally ap...

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Evidence for asymmetric rotation of spins in antiferromagnetic exchange-spring

Cited by 25 publications

References 36 publications

Electrical control of antiferromagnetic metal up to 15 nm

Electrical control of antiferromagnetic metal up to 15 nm

Antiferromagnetic spintronics

Antiferromagnetic spintronics

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