Evaporation Processes

Deshpandey, C.V.; Bunshah, R.F.

doi:10.1016/b978-0-08-052421-4.50007-1

Cited by 10 publications

(15 citation statements)

References 38 publications

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“…Materials such as Cr, Mo, Pd, V, Fe, and Si reach a vapor pressure of 1.3 Pa (10 −2 Torr) and have reasonable evaporation rates before melting. Figure 3.9 depicts a sublimation source conceived by Roberts and Via [7,31]. Its application is subliming Cr.…”

Section: Evaporation Sourcementioning

confidence: 99%

“…3.8f) has a capacity substantially larger than a dimpled foil, typically ranging from 0.1 cm 3 to over 5 cm 3 [30]. Sublimation furnace: Sublimation occurs if a material has a very high vapor pressure below its melting point [7]. Materials such as Cr, Mo, Pd, V, Fe, and Si reach a vapor pressure of 1.3 Pa (10 −2 Torr) and have reasonable evaporation rates before melting.…”

Section: Evaporation Sourcementioning

confidence: 99%

“…Self resistance heating sources: Figure 3.8 shows a variety of wire and metal foil self resistant heaters [1,7]. By choosing high melting point and high vapor pressure refractory metals like W, Mo, Ta, and Pt as source materials, the risk of contaminating the deposited film is minimized.…”

Section: Evaporation Sourcementioning

confidence: 99%

“…A wire source consists of single or multiple strands of mostly tungsten (W) [1,7,8]. The wire may be bent into a hairpin (Fig.…”

Section: Evaporation Sourcementioning

confidence: 99%

“…It applies physical processes for forcing the source atoms to enter the gaseous phase. This transformation may be caused by a thermal process resulting in evaporating solid or liquid materials [1,7,8]. Alternatively, it may be based on a plasma process ejecting atoms from a solid target due to a collision impact with excited ions, a process called sputtering [1,9,10].…”

Section: Introduction Into Depositionmentioning

confidence: 99%

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Deposition Technologies

Gatzen¹,

Saile²,

Leuthold³

2015

Micro and Nano Fabrication

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Deposition of thin-films used in MEMS and NEMS devices rely on a wide variety of technologies. Physical vapor deposition (PVD) uses physical effects like evaporation or ion bombardment to create thin-films on a substrate by forcing source atoms into a gaseous phase. Chemical vapor deposition (CVD) and similar processes create coatings by a chemical reaction of volatile species by using reaction processes defined by chemical reaction equations. While PVD and CVD are dry processes, for depositing conductive thin-films the substrate may be submerged in an electrically conductive liquid (an electrolyte) and subjected to electrochemical or chemical deposition. Spin-coating and spray-coating are two examples of technologies that lend themselves to creating organic films-a technology widely used in depositing photoresists in photolithography. Dip processes like solgel may be used for the creation of oxide coatings.

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Section: Evaporation Sourcementioning

confidence: 99%

Section: Evaporation Sourcementioning

confidence: 99%

Section: Evaporation Sourcementioning

confidence: 99%

“…A wire source consists of single or multiple strands of mostly tungsten (W) [1,7,8]. The wire may be bent into a hairpin (Fig.…”

Section: Evaporation Sourcementioning

confidence: 99%

Section: Introduction Into Depositionmentioning

confidence: 99%

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Deposition Technologies

Gatzen¹,

Saile²,

Leuthold³

2015

Micro and Nano Fabrication

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The deposition of aluminum thin films by CVD using a novel adduct of dimethylaluminum hydride

Jones¹,

Houlton²,

Rushwarth³

et al. 1995

Chemical Vapor Deposition

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Thin films of aluminum have an important application in the metallization of silicon devices in very large scale integration technology. In this communication a new precursor, NMe2AlH(NMe2Et)2 has been used for the CVD of high purity aluminum in the temperature range 250–350 °C. In contrast to currently available precursors it is a free flowing and non‐pyrophoric liquid, making it less hazardous and more convenient for use in CVD.

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Amine‐stabilized cyclopentadienyl diisobutyl aluminum complexes as new kinds of precursors for the deposition of thin aluminum films by CVD

Schérer

Krück

1997

Chemical Vapor Deposition

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Ab initio calculations (up to MP4SDQ/6‐31+G*//MP2(FU)/6‐31+G* + δZPVE) on several model nitroaldol (Henry) reactions have been performed. It is found that the free nitronate anions react with aldehydes via transition states in which the nitro and carbonyl dipoles are antiperiplanar to each other. This kind of reaction yields anti (erythro) nitroalcohols as major products. The Henry reaction between lithium nitronates and aldehydes is predicted to occur via cyclic transition structures yielding syn nitroalcohols as major products. The stereocontrol in these model reactions is low. The factors affecting the stereoselectivity in the reaction between dilithiated nitronates and aldehydes are also discussed.

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Evaporation Processes

Cited by 10 publications

References 38 publications

Deposition Technologies

Deposition Technologies

The deposition of aluminum thin films by CVD using a novel adduct of dimethylaluminum hydride

Amine‐stabilized cyclopentadienyl diisobutyl aluminum complexes as new kinds of precursors for the deposition of thin aluminum films by CVD

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