The deposition of aluminum thin films by CVD using a novel adduct of dimethylaluminum hydride

Abstract

Thin films of aluminum have an important application in the metallization of silicon devices in very large scale integration technology. In this communication a new precursor, NMe2AlH(NMe2Et)2 has been used for the CVD of high purity aluminum in the temperature range 250–350 °C. In contrast to currently available precursors it is a free flowing and non‐pyrophoric liquid, making it less hazardous and more convenient for use in CVD.