Evaporation–glow discharge hybrid source for plasma immersion ion implantation

Bioactivity of titanium following sodium plasma immersion ion implantation and deposition

“…The low melting point makes stable and long implantation very difficult and the high reactivity imposes difficulty in handling as well as construction of a suitable Na cathode. In our experiments, an evaporating ion source invented by the research staff in the City University of Hong Kong was adopted [20][21][22]. In this source, instead of using electrical triggering to form the plasma, evaporation is used and due to the high ionizing efficiency of Na, an intense Na plasma plume can be readily formed to conduct PIII.…”

Improved ion implant fluence uniformity in hydrogen enhanced glow discharge plasma immersion ion implantation into silicon

“…The electric field formed between the small pointed hollow anode and large tabular cathode concentrates electrons, improves plasma formation, and increases the process efficacy. 2,3 Under similar implantation conditions, the cathode current and retained ion dose in EGD-PIII have been observed to be larger than those in traditional PIII. 4 The use of hydrogen and helium ion implantation to perform ion-cutting and layer transfer to produce silicon-on-insulator (SOI) was proposed a few years ago 5 and is currently a commercial manufacturing process.…”

“…[1][2][3] In this technique, the plasma is generated by instantaneous glow discharge when a high negative bias is applied to the cathode. The electric field formed between the small pointed hollow anode and large tabular cathode concentrates electrons, improves plasma formation, and increases the process efficacy.…”

Ion focusing in enhanced glow discharge plasma immersion ion implantation of hydrogen and nitrogen into silicon

“…Electrons from either the plasma or target ͑second-ary electrons͒ can be focused to the hollow anode and this electron-focusing field in turn enhances the glow discharge leading to more efficient ion implantation. 2,3 The plasma distribution acquired by Langmuir probe measurements discloses that the electron density is quite uniform in the vicinity of the negatively biased substrate, 4 and the investigation has been complemented by numerical studies of the plasma sheath physics utilizing the multiple-grid particle-in-cell ͑PIC͒ code. 5,6 Although the impact energy and retained dose in EGD-PIII have been demonstrated to be better than those in conventional PIII, 7 lateral nonuniformity in the ion fluence may hamper its application to the ion-cutting and layer transfer technology which requires uniform hydrogen ion implantation into a silicon wafer.…”