Ion focusing in enhanced glow discharge plasma immersion ion implantation of hydrogen and nitrogen into silicon

Abstract

Ion focusing in enhanced glow discharge plasma immersion ion implantation (EGD-PIII) of hydrogen into silicon affects the lateral ion fluence uniformity. The phenomenon and its effects are investigated experimentally and theoretically under different conditions and compared to those in nitrogen EGD-PIII. Consistent results are obtained from experiments and numerical simulation disclosing that the lower the plasma density, the more severe is the ion focusing effect. The influence of the negative high voltage on the ion focusing effect is small compared to that of the plasma density.

Improved ion implant fluence uniformity in hydrogen enhanced glow discharge plasma immersion ion implantation into silicon

“…Ion focusing in conventional PIII has been studied by Stamate 10 and Tian,11,12 and in EGD-PIII, the plasma density and negative cathode voltage influence ion focusing. 13 The potential lateral ion fluence non-uniformity in EGD-PIII impacts negatively its application to the ion-cutting and layer transfer technology which requires uniform hydrogen ion implantation into a large silicon wafer. In fact, in order to reduce production costs, integrated circuit (IC) manufacturers a) Authors to whom correspondence should be addressed.…”