Evaporation effect on laser induced solid–liquid phase transitions in CdTe and HgCdTe

Golovan, L. A.; Markov, B. A.; Кашкаров, П. К.; Timoshenko, V. Yu.

doi:10.1016/s0038-1098(98)00485-2

Cited by 28 publications

(8 citation statements)

References 13 publications

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“…The simulation results of the dynamics of phase transitions induced by nanosecond radiation from a KrF excimer laser (l = 248 nm, t = 20 ns) in ZnSe have shown that the components vaporization leads to surface cooling of the material and formation (1) and the thickness of the evaporated ZnSe layer (2) as a functions of energy density E (solid lines correspond to [9] and dashed lines to [10]). of a nonmonotonic temperature profile with maximum temperature in the semiconductor volume at the distance of $6 nm from the surface.…”

Section: Resultsmentioning

confidence: 99%

“…In particular, the studies of CdTe surface layers laser modification principles under the effect of ruby laser nanosecond radiation [1][2][3][4] have shown that melting and subsequent crystallization are accompanied by the evaporation of the its components. Due to more intensive evaporation of Cd atoms, the surface region becomes enriched with tellurium [2] and a tellurium film can even be formed at the surface [3].…”

Section: Introductionmentioning

confidence: 99%

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Simulation of composition modification in ZnSe by nanosecond radiation of excimer laser

Zhvavyi

Зыков

2008

Applied Surface Science

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Simulation of composition modification in ZnSe by nanosecond radiation of excimer laser

Zhvavyi

Зыков

2008

Applied Surface Science

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“…[36][37][38] Golovan et al calculated the surface temperature reached during PLA by accounting for the heat losses due to evaporation of Cd and Te. 39 This was later adapted by us for use in a three-dimensional finite-element model of laser interactions with CdTe. 18 Pulsed laser-induced surface modification was first applied to the more PV-relevant polycrystalline CdTe by Nelson et al by annealing 200 to 300 nm thick CdTe films using 8 ns pulses of the second, third and fourth harmonic of a Nd:YAG laser.…”

Section: Laser-induced Surface Modificationmentioning

confidence: 99%

Laser processing for thin film chalcogenide photovoltaics: a review and prospectus

et al. 2015

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Abstract. We review prior and on-going works in using laser annealing (LA) techniques in the development of chalcogenide-based [CdTe and CuðIn; GaÞðS; SeÞ 2 ] solar cells. LA can achieve unique processing regimes as the wavelength and pulse duration can be chosen to selectively heat particular layers of a thin film solar cell or even particular regions within a single layer. Pulsed LA, in particular, can achieve non-steady-state conditions that allow for stoichiometry control by preferential evaporation, which has been utilized in CdTe solar cells to create Ohmic back contacts. Pulsed lasers have also been used with CuðIn; GaÞðS; SeÞ 2 to improve device performance by surface-defect annealing as well as bulk deep-defect annealing. Continuouswave LA shows promise for use as a replacement for furnace annealing as it almost instantaneously supplies heat to the absorbing film without wasting time or energy to bring the much thicker substrate to temperature. Optimizing and utilizing such a technology would allow production lines to increase throughput and thus manufacturing capacity. Lasers have also been used to create potentially low-cost chalcogenide thin films from precursors, which is also reviewed. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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“…8,11 With the application of an appropriate UV laser pulse, temperatures approaching but not exceeding the melting temperature can be reached causing preferential evaporation of Cd from the surface. 13 The first experiment to apply UV PLA to polycrystalline CdTe (p-CdTe) was by Nelson et al who showed that Te-agglomeration occurs largely at the grain boundaries (GB) from high resolution x-ray photoelectron microscopy that necessitated a synchrotron radiation source. 12 Interestingly, this work also found that a slight Cd enrichment occurred at the surfaces of the grain interiors, even though the overall effect of PLA was a Te enrichment at the surface.…”

Section: Introductionmentioning

confidence: 99%

Surface stoichiometry of pulsed ultraviolet laser treated polycrystalline CdTe

Simonds

Palekis

Devener

et al. 2014

Journal of Applied Physics

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Dependence of film texture on substrate and growth conditions for CdTe films deposited by close-spaced sublimation J.Alternative procedure for the fabrication of close-spaced sublimated CdTe solar cellsThe effects of nanosecond pulsed ultraviolet laser annealing on the surface stoichiometry of closespace sublimated polycrystalline thin films are investigated using angle-resolved x-ray photoemission spectroscopy (XPS). The raw data suggest the formation of a Cd-rich surface layer, but this is counter to the expectation based on Cd and Te vapor pressures above CdTe that predicts a Te-rich layer and to direct observation of elemental Te at the surface. In order to explain this apparent discrepancy, we analyze our XPS data in the context of prior reports of lateral segregation of Cd and Te at the surface after pulsed laser treatments with a simple model of angular dependent XPS in the presence of surface roughness. This analysis reveals that a uniform Te layer cannot explain our results. Instead, our analysis suggests that Te enrichment occurs near grain boundaries and that a sub-monolayer Cd layer exists elsewhere. These complex yet repeatable results underscore the challenges in measuring surface stoichiometry to high precision on films relevant for polycrystalline CdTe devices. It also suggests that the Cd and Te vapor pressures above grain boundaries may differ from those above grain interiors and that ohmic contact may be made preferentially at the grain boundaries after pulsed laser annealing. V C 2014 AIP Publishing LLC.

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Evaporation effect on laser induced solid–liquid phase transitions in CdTe and HgCdTe

Cited by 28 publications

References 13 publications

Simulation of composition modification in ZnSe by nanosecond radiation of excimer laser

Simulation of composition modification in ZnSe by nanosecond radiation of excimer laser

Laser processing for thin film chalcogenide photovoltaics: a review and prospectus

Surface stoichiometry of pulsed ultraviolet laser treated polycrystalline CdTe

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