Evaporated polycrystalline silicon films for photovoltaic applications - grain size effects

Feldman, Charles; Blum, N. A.; Charles, Harry K.; Satkiewicz, F. G.

doi:10.1007/bf02655680

Cited by 42 publications

(7 citation statements)

References 7 publications

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“…Present theoretical calculations are found to be in good agreement with the available experimental data [4,5,6]. It is observed that qV g decreases rapidly with increasing grain sizes.…”

Section: Discussionsupporting

confidence: 83%

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Grain boundary recombination and efficiency of polycrystalline silicon solar cells

Sharma

Joshi²,

Bhatt

2009

2009 International Conference on Emerging Trends in Electronic and Photonic Devices &Amp; Systems

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The dependence of grain boundary (GB) space-charge potential barrier height (qV g ), effective diffusion length of minority carriers L * n , and the efficiency of polycrystalline silicon (PX-Si) solar cells on grain size is studied theoretically. The computations are done by considering Gaussian energy distribution for GB interface states. It is observed that a good agreement between the theoretical results and the available experimental data for efficiency of PX-Si solar cells can be achieved only when the variation of diode quality factor with grain size is considered.

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“…Present theoretical calculations are found to be in good agreement with the available experimental data [4,5,6]. It is observed that qV g decreases rapidly with increasing grain sizes.…”

Section: Discussionsupporting

confidence: 83%

“…3. A good agreement is obtained between computed results and available experimental data [4,6,7]. Present study predicts that to match the experimental value of efficiency and effective diffusion length, in the calculations of open circuit voltage it is necessary to consider the variation of n 2 with grain size.…”

Section: Discussionsupporting

confidence: 69%

Grain boundary recombination and efficiency of polycrystalline silicon solar cells

Sharma

Joshi²,

Bhatt

2009

2009 International Conference on Emerging Trends in Electronic and Photonic Devices &Amp; Systems

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“…Si-AI203 Cu-InSb Chromate-Al SiO,-Ge Ga203-GaAs Sc-AI203 Jonker et al 1973Morgan et al 1977Wittmaack 1977a Anderson et al 1978Burger et al 1977Carlson and Magee 1978Charles et al 1976Feldman et al 1978Guthrie 1973Guthrie and Blewer 1972Huber et al 1978Kuhl et al 1976Schilling and Burger 1978Sunderland 1974Wang and Gray 1976Watanabe et al 1977 reason is their importance f a the fabrication of resistors and capacitors. By controlling the chemical coniposition of the electrolyte during anodic oxidation of Ta, sharply defined layers of varying composition can be produced in Ta205 films (Pawel et al 1972).…”

Section: Gaasmentioning

confidence: 99%

Depth profiling by secondary ion mass spectrometry

Zinner¹

1980

Scanning

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The principles and applications of depth profiling by secondary ion mass spectrometry (SIMS) are reviewed. Discussed are the basic physical processes and instrumental factors which influence the shape of depth profiles and which have to be understood or controlled for successful experimental measurements. Microroughness caused by sputtering, atomic mixing by primary beam knock‐on, and sample consumption limit the depth resolution which can be achieved while the chemical effect of ion yield enhancement by reactive species, matrix effects, and preferential sputtering can strongly affect the secondary ion signal. Instrumental effects to be controlled include beam uniformity, sample charging, and beam, and residual gas contamination. High depth resolution and sensitivity are the reasons for a wide variety of applications for SIMS depth profiling. Reviewed are measurements of the range distribution of ions implanted into semiconductors and their redistribution by subsequent annealing, studies of thin films and of oxide layers, diffusion measurements in metals, semiconductors, and minerals, measurements of elemental surface enhancements in airborne particles, and lunar glass spherules, and the search for solar wind implanted ions in lunar crystals.

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“…One of the potentially valuable approaches is to use a polycrystalline Si film on a low-cost substrate such as glass. Early attempts at fabricating cells with Si films in the thickness range of 1-3 µm have shown excellent current densities (J sc 's) that reached near-theoretical values (2,3). However, the V oc 's and the FF's of such devices are quite low, which could be attributed to factors such as very small grain size, the high density of intra-grain defects, and high interface recombination velocities (4,5).…”

Section: Introductionmentioning

confidence: 99%