Evaluation of Thermoelectric Properties of Monolithically-Integrated Core-Shell Si Nanowire Bridges

Uesugi, Akio; Nishiyori, Shusuke; Sugano, Koji; Isono, Yoshitada

doi:10.1109/mems49605.2023.10052493

Cited by 2 publications

(3 citation statements)

References 12 publications

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“…We further compared the TE performance, including thermal conductivity, electrical conductivity, Seebeck coefficient, and ZT, of our double-sided SiNWs with others reported in the literature, and the results are summarized in Table I. Our double-sided SiNW structure exhibits a thermal conductivity of 0.644 W/mK at 700 K, which is significantly lower than that of single-sided vertical SiNWs (10.1 W/mK at 300 K) of Lee et al 22 The electrical conductivity of our double-sided SiNWs is 4288 S/m at 700 K, which is substantially higher than the resistivity reported in the study of Uesugi et al 31 for the core-shell SiNWs. The Seebeck coefficient of our SiNWs is 225 μV/K at 700 K, which is within the range of values reported in the literature but lower than the À284 μV/K for the SiNW/SOG composite from Curtin et al 32 Our study is the only one that reports a ZT value at 700 K.…”

Section: Characterizations Of Sinw Array Device Thermoelectric Perfor...mentioning

confidence: 46%

“…Those studies need to determine the power output under various controlled temperature gradients to calculate the efficiency of energy conversion from heat to electricity. Power density needs to be evaluated to understand the potential of applying these devices under the constraints of space and weight 22 Single-sided vertical Si NWs 10.1 (300 K) Not specified 298 (300 K) Not specified Uesugi et al 31 Single-sided core-shell SiNWs Not specified 0.000 013 610 Not specified Curtin et al 32 Single-sided SiNW/SOG composite 1.45 (300 K) Not specified −284 Not specified limitations. Primary challenges at the device level include managing the thermal and electrical contact resistances at the junctions and ensuring the stability of these joints under varying thermal conditions.…”

Section: Characterizations Of Sinw Array Device Thermoelectric Perfor...mentioning

confidence: 99%

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Thermoelectric performance of high aspect ratio double-sided silicon nanowire arrays

Ning,

Zeng,

Rapp

et al. 2024

Journal of Applied Physics

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Roughly, 50% of primary energy worldwide is rejected as waste heat over a wide range of temperatures. Waste heat above 573 K has the highest Carnot potential (>50%) to be converted to electricity due to higher Carnot efficiency. Thermoelectric (TE) materials have gained significant attention as potential candidates for efficient thermal energy conversion devices. Silicon nanowires (SiNWs) are promising materials for TE devices due to their unique electrical and thermal properties. In this study, we report the successful fabrication of high-quality double-sided SiNW arrays using advanced techniques. We engineered the double-sided structure to increase the surface area and the number of TE junctions, enhancing TE energy conversion efficiency. We also employed non-agglomeration wire tip engineering to ensure uniformity of the SiNWs and designed effective Ohmic contacts to improve overall TE efficiency. Additionally, we post-doped the double-sided SiNW arrays to achieve high electrical conductivity. Our results showed a significant improvement in the TE performance of the SiNW array devices, with a maximum figure-of-merit (ZT) value of 0.24 at 700 K, fabricated from the single SiNW with ZT of 0.71 at 700 K in our previous work [Yang et al., Nat. Commun. 12(1), 3926(2021)].

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Section: Characterizations Of Sinw Array Device Thermoelectric Perfor...mentioning

confidence: 46%

Section: Characterizations Of Sinw Array Device Thermoelectric Perfor...mentioning

confidence: 99%

Thermoelectric performance of high aspect ratio double-sided silicon nanowire arrays

Ning,

Zeng,

Rapp

et al. 2024

Journal of Applied Physics

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“…Silicon-based nanowires (SiNWs) are particularly attractive because of silicon's focal role in the semiconductor industry. SiNW arrays have distinct physical and optical properties, allowing them to be used as basic components for a variety of applications, such as solar cells [3][4][5][6], thermoelectric systems [7][8][9], Li-ion batteries [10], field-effect transistors (FETs) [11][12][13], bio and chemical sensors [14,15], photodetectors [16][17][18] and photocatalysts [19,20]. SiNWs are distinct and sensitive to surface analyte adsorption because of their high surface area-to-volume ratio and repeatable electronic properties.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and Characterization of Silicon Nanowires Heterojunction Solar Cell

Inaya,

Mahdi

2023

IJP

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Silicon nanowire arrays (SiNWs) are created utilizing the metal-assisted chemical etching method with an Ag metal as a catalyst and different etching time of 15, 30, and 60 minutes using n-Si (100). Physical properties such as structural, surface morphology, and optical properties of the prepared SiNWs are studied. The diameter of prepared SiNWs ranged from 20 to 280 nm, and the reflectance in the visible part of the wavelength spectrum was less than 1% for all prepared samples. The obtained energy gap of prepared SiNWs was around 2 eV, which is higher than the energy gap of bulk silicon. X-ray diffraction (XRD) has diffraction peaks at 68.70o for all prepared samples. The heterojunction solar cell was fabricated based on the n-SiNWs/ P3HT/PEDOT: PSS structure. The heterojunction solar cell produced for 60 minutes has the highest Jsc of 11.55 mA.cm-2 and a conversion efficiency of 0.93%. Based on SiNWs prepared for etching time of 15 min, the solar cell demonstrated Jsc and Voc of 2.73 mA/cm2 and 0.46 V, respectively, and a conversion efficiency of 0.34%.

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Evaluation of Thermoelectric Properties of Monolithically-Integrated Core-Shell Si Nanowire Bridges

Cited by 2 publications

References 12 publications

Thermoelectric performance of high aspect ratio double-sided silicon nanowire arrays

Thermoelectric performance of high aspect ratio double-sided silicon nanowire arrays

Fabrication and Characterization of Silicon Nanowires Heterojunction Solar Cell

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