Evaluation of the local temperature of conductive filaments in resistive switching materials

Yalon, Eilam; Cohen, Shimon; Gavrilov, A.; Ritter, D.

doi:10.1088/0957-4484/23/46/465201

Cited by 34 publications

(28 citation statements)

References 39 publications

(61 reference statements)

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“…The use of a semiconductor electrode allows determining the local temperature by measuring the thermionic emission from the filament into the semiconductor in a three-terminal bipolar transistor structure [8]. The details of the device structure and the extraction method were given in [8].…”

Section: Temperature Extraction Using An Mis Bipolar Transistormentioning

confidence: 99%

“…The details of the device structure and the extraction method were given in [8]. The resistive switching characteristics of an MIS device are shown in Fig.…”

Section: Temperature Extraction Using An Mis Bipolar Transistormentioning

confidence: 99%

“…Furthermore, a tunneling gap or an impeding interface must exist between the filament and the semiconductor electrode [8]. As a result, the resistance of the RRAM element in the typical MIS-BT devices is larger than ∼10/G 0 , where G 0 = 2e 2 /h is the quantum conductance, h is the Planck constant, and e is the electron charge.…”

Section: Temperature Accuracy-range Tradeoffsmentioning

confidence: 99%

“…One method is based on short pulse measurements [7], [10], [16] and the other is based on the measurement of minority-carrier thermionic-emission current in a three-terminal MIS structure [8]. It is the purpose of this paper to compare these two techniques and discuss their underlying physics.…”

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confidence: 99%

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Thermometry of Filamentary RRAM Devices

Yalon

Sharma

Skowroński

et al. 2015

IEEE Trans. Electron Devices

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Since thermal effects play a major role in filamentary RRAM devices, we compare the two localized thermometry methods developed for such devices. One method is based on short-pulsed measurements and the other on the measurement of minority-carrier injection from the filament into a semiconductor electrode by thermionic emission. We carried out and compared the measurements on the same functional oxide layer. Both methods indicate that the filament temperature is at least ∼550 K during device operation. Furthermore, comparison between the measured thermal resistance and the thermal simulations of both techniques shows that under the conditions of low forming current compliance (∼10 μA), the filament dimensions are below ∼5 nm. We show that the thermionic emission method is useful for high-resistance (>100 k ) devices operating at low-power conditions (<10 μW), whereas the pulsed thermometry is more suitable for lower resistance devices (<500 k ) operated above 1 μW. The average thermal resistance measured by the pulse technique decreases with applied power. Our simulations indicate that the expansion of the heated zone surrounding the filament can explain the observed reduction in thermal resistance with applied power. The underlying physics of the two methods is discussed.

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Section: Temperature Extraction Using An Mis Bipolar Transistormentioning

confidence: 99%

“…The details of the device structure and the extraction method were given in [8]. The resistive switching characteristics of an MIS device are shown in Fig.…”

Section: Temperature Extraction Using An Mis Bipolar Transistormentioning

confidence: 99%

Section: Temperature Accuracy-range Tradeoffsmentioning

confidence: 99%

mentioning

confidence: 99%

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Thermometry of Filamentary RRAM Devices

Yalon

Sharma

Skowroński

et al. 2015

IEEE Trans. Electron Devices

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“…While in our case, both sources of carbon could be easily avoided in a more advanced device fabrication process, other deposition methods used in industrial processes such as ALD may lead to higher concentration levels of carbon. Although the thermal budget in standard CMOS processing does not reach temperatures of 700 °C, it has been calculated that during resistive switching Joule heating occurs with temperatures of more than 1000 K. 25 This could lead to a local carbide formation within the conductive filament itself influencing its switching properties. In order to better understand the influence of HfCx on electrical transport and resistive switching, we have performed LC-AFM measurements ex situ on the film grown under 0.3 sccm oxygen flow rate before and after annealing in reducing atmosphere (24 h, 700 °C).…”

Section: Fig 2 (B)(i) and (Ii) Shows The Variation Of The Componentsmentioning

confidence: 99%

Hafnium carbide formation in oxygen deficient hafnium oxide thin films

Rodenbücher

Hildebrandt

Szot

et al. 2016

Applied Physics Letters

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On highly oxygen deficient thin films of hafnium oxide (hafnia, HfO2-x) contaminated with adsorbates of carbon oxides the formation of hafnium carbide (HfCx) at the surface during vacuum annealing at temperatures as low as 600 °C is reported. Using X-ray photoelectron spectroscopy the evolution of the HfCx surface layer related to a transformation from insulating into metallic state is monitored in situ. In contrast, for fully stoichiometric HfO2 thin films prepared and measured under identical conditions, the formation of HfCx was not detectable suggesting that the enhanced adsorption of carbon oxides on oxygen deficient films provides a carbon source for the carbide formation. This shows that a high concentration of oxygen vacancies in carbon contaminated hafnia lowers considerably the formation energy of hafnium carbide. Thus the presence of a sufficient amount of residual carbon in resistive random access memory devices might lead to a similar carbide formation within the conducting filaments due to Joule heating. HfO2 (hafnia) has been studied extensively in the last decades as a high- dielectric being used as replacement of the standard gate dielectric SiO2 in order to produce high-density logic and memory devices.1 Furthermore, it was found that HfO2 can undergo a local insulator-metal (IM) transition under the influence of an electric field opening up the possibility to use it as resistive switching material in redox-based random access memories (RRAM). 2,3During resistive switching in HfO2, a local redox reaction associated with a formation or modification of conducting filaments takes place, in which the movement of oxygen vacancies plays the key role for the modulation of the electric properties. [4][5][6] Hence, the investigation of the behavior of oxygen vacancies is important for RRAM device performance.In contrast to the local insulator-metal transition as observed in conducting filaments in HfO2 on the nanoscale, also a global insulator-metal transition on a macroscopic scale has been found in oxygen deficient hafnium oxide thin films grown by molecular beam epitaxy (MBE). 7,8 The oxygen deficiency in these films is created during growth under oxygen deficient conditions leading to a homogeneous distribution of oxygen vacancies. With increasing amount of oxygen vacancies, the band gap is consistently reduced and defect states inside the gap eventually form a defect band at the Fermi level.7,8 RRAM devices based on these films show forming free resistive switching and the forming voltage is independent on the thickness of the highly oxygen deficient HfO2-x layer. 9,10 In this paper we discuss the reaction of carbon impurities to hafnium carbide and its influence on hafnium oxide-based resistive switching. The role of carbon impurities is of extremely high importance, as they are inherent to most of today's deposition techniques commonly used for fabricating complementary metal oxide semiconductor (CMOS) devices, such as atomic layer deposition (ALD) based on organic precursors. Based on an in-ope...

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Electronic Phenomena, Electroforming, Resistive Switching, and Defect Conduction Bands in Metal‐Insulator‐Metal Diodes

Hickmott

2021

Oxide Electronics

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Evaluation of the local temperature of conductive filaments in resistive switching materials

Cited by 34 publications

References 39 publications

Thermometry of Filamentary RRAM Devices

Thermometry of Filamentary RRAM Devices

Hafnium carbide formation in oxygen deficient hafnium oxide thin films

Electronic Phenomena, Electroforming, Resistive Switching, and Defect Conduction Bands in Metal‐Insulator‐Metal Diodes

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