Evaluation of Stress Corrosion Resistance Properties of 15CrMoR(H) in H ₂ S Environment

AlGaN-based solar-blind UV heterojunction bipolar phototransistors: structural design, epitaxial growth, and optoelectric properties

“…Meanwhile, the holes will be driven towards the base (B) and trapped in the floating base (B) region. 31 The accumulation of excess holes reduces the energy barrier of the emitter junction, enabling a large number of electrons in the emitter (E) to diffuse across the emitter junction to the collector (C), finally realizing a significant increase of the collector photocurrent (I CPh ). Fig.…”

“…The peak responsivity and EQE can be respectively as high as 4.55 A W À1 and 2.1 Â 10 3 % at 267 nm when the V CE reaches a voltage of 12 V. This V CE -related photoelectric gain in the HBPT has been verified to be determined by the transit time of photogenerated electrons across the base (B) and the lifetime of the excess photogenerated holes trapped in the base (B). 31,33 In the open base mode, as the V CE increases, the depletion region of the reverse-biased base-collector junction expands, resulting in the decrease of the neutral base width. The extended depletion region can cooperate with MQWs to absorb more photons and thus produce more photogenerated electrons and holes.…”

Catalytic Conversion of 5‐Hydroxymethylfurfural to High‐Value Derivatives by Selective Activation of C−O, C=O, and C=C Bonds

“…In 2021, Zhang et al. summarized some advances of DMF synthesis on non‐noble metal catalysts with respect to effects of carriers and bimetallic synergy [36] …”

Polarization-doped n-p-i-p-n GaN-based parallel phototransistor with thick GaN absorption layer for achieving high responsivity

“…However, a phototransistor can produce high optical gain without getting any surface states involved, and hence a faster response speed can be obtained to millisecondlevel [12]. Moreover, Mg doping in the p-type base region will be redistributed and the subsequent n-type layer will suffer from the Mg compensation effect [13,14]. Hence, a polarization-doped AlGaN base structure is proposed to form a NPN phototransistor [15].…”