Evaluation of SRAM-Core Susceptibility against Power Supply Voltage Variation

Sawada, Takuya; Toshikawa, Taku; Yoshikawa, Kumpei; Takata, Hitoshi; Nii, Koji; Nagata, Makoto

doi:10.1587/transele.e95.c.586

Cited by 4 publications

(1 citation statement)

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“…[21][22][23][24] The details of measurement methodologies have been reported. 25,26) We will focus on the in-depth interpretation of the measurement data through the combined use of DPI, ODM, and BIST, and drawing the nature of false bits in SRAM cores. 27) The remaining parts of this paper are constructed as follows.…”

Section: Introductionmentioning

confidence: 99%

False Operation of Static Random Access Memory Cells under Alternating Current Power Supply Voltage Variation

Sawada¹,

Takata²,

Nii³

et al. 2013

Jpn. J. Appl. Phys.

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Static random access memory (SRAM) cores exhibit susceptibility against power supply voltage variation. False operation is investigated among SRAM cells under sinusoidal voltage variation on power lines introduced by direct RF power injection. A standard SRAM core of 16 kbyte in a 90 nm 1.5 V technology is diagnosed with built-in self test and on-die noise monitor techniques. The sensitivity of bit error rate is shown to be high against the frequency of injected voltage variation, while it is not greatly influenced by the difference in frequency and phase against SRAM clocking. It is also observed that the distribution of false bits is substantially random in a cell array.

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