Evaluation of recent technologies of non-volatile RAM

Nuns,; Duzellier, S.; Bertrand,; Hubert, G.; Pouget, Alexandre; Darracq,; Crowther, David; Soonckindt,

doi:10.1109/radecs.2007.5205525

Cited by 9 publications

(15 citation statements)

References 4 publications

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“…Again a word of warning for commercial devices: cells are very robust, but the periphery may be subject to latch-up, total dose issues, etc. [163], [175]. This is illustrated in Fig.…”

Section: A Reliability and Radiation Effectsmentioning

confidence: 92%

Present and Future Non-Volatile Memories for Space

Gerardin

Paccagnella

2010

IEEE Trans. Nucl. Sci.

138

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We discuss non-volatile memories (NVM) for space applications. The focus will be both on technologies and devices aimed at the mainstream commercial markets and on rad-hard devices. Commercial NVMs are very attractive for space designers due to their large size (tens of Gbits), even though they have several issues related to ionizing radiation. Rad-hard NVMs offer radiation hardness, but are available only in small size (few Mbits). Most of the emphasis in this review paper will be on the current dominant technology in the mainstream market: floating gate flash memories. A comprehensive discussion of total dose and single event effects results for a wide cross section of NVMs will be presented. Finally, we will conclude with a cursory glance at other emerging non-volatile technologies.Index Terms-Ferroelectric devices, flash memory, magnetoresistive devices, nonvolatile memory, phase change memory, radiation effects. I. OVERVIEWN ON-VOLATILE memories (NVMs) are used in a variety of space applications, as data or code memories, and are increasingly needed for future missions. This paper will discuss the technologies and devices available for non-volatile storage in the mainstream and in the rad-hard market, with a strong attention to the radiation sensitivity, which is of primary importance for harsh environments such as space.The work is organized as follows: we will first introduce the basic definitions and metrics concerning NVMs, then explore and compare the major storage concepts. In particular, charge-based, phase-change, ferroelectric, and magnetoresistive memories will be presented, with emphasis on density, performance, reliability, and radiation sensitivity. Architectural information concerning the array organization and peripheral circuitry will be given, highlighting known radiation issues and critical building blocks. A. Key Definitions and MetricsA non-volatile memory is a memory that retains information when powered off. Different terms are used to indicate the act of storing a digital value in a non-volatile memory bit, depending on the memory type and architecture. In charge-based storage, the terms program and erase are used to indicate the injection of Manuscript negative charge into and its removal from (or injection of positive charge into) the charge storage element, respectively. In the context of phase change memories, the terms set and reset are used to indicate the operations leading to the crystallization and amorphization of the phase-change material. For other memories, such as ferroelectric or magnetic, the term write is simply used, as for SRAMs and DRAMs. The association of these operations and terms with the stored digital value ("0" or "1") is arbitrary. In the following we will stick to the conventions most commonly used for each memory type.In addition to familiar parameters such as speed, power consumption, and density, two additional metrics are of main importance for non-volatile memories: retention and endurance. This is because wear-out is usually much stronger in non-volat...

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“…Again a word of warning for commercial devices: cells are very robust, but the periphery may be subject to latch-up, total dose issues, etc. [163], [175]. This is illustrated in Fig.…”

Section: A Reliability and Radiation Effectsmentioning

confidence: 92%

Present and Future Non-Volatile Memories for Space

Gerardin

Paccagnella

2010

IEEE Trans. Nucl. Sci.

138

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“…Over the years, the radiation induced damages to FRAMs including those associated with the single event effect (SEE) and total ionizing dose (TID) effect have been researched and reported [15][16][17][18][19][20][21]. Concerning the TID, previous studies have been conducted on issues including the retention degradation of ferroelectric materials [6,15], dose and dose rate dependence [16,17], temperature dependence [18], comparison of ferroelectric-embedded and CMOS-only circuits [19] and so on.…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…Concerning the TID, previous studies have been conducted on issues including the retention degradation of ferroelectric materials [6,15], dose and dose rate dependence [16,17], temperature dependence [18], comparison of ferroelectric-embedded and CMOS-only circuits [19] and so on. The ferroelectric materials have been reported to be able to withstand up to 10 Mrad(Si) [6], but the total dose failures of integrated FRAM devices have been reported at much lower dose levels [15][16][17][18]. The study on integrated ferroelectric/CMOS technology suggested that the embedded CMOS circuits have a huge impact on the overall radiation response of FRAMs [19], and some speculation about the sensitive parts of FRAM blocks have been made based on global irradiations [16,18], but detailed study on the TID induced damage to the FRAM-based circuits is still not available.…”

Section: Introductionmentioning

confidence: 99%

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Total ionizing dose sensitivity of function blocks in FRAM

Liou

et al. 2015

Microelectronics Reliability

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“…Since this non-volatile storage element is based on polarization and responds only to applied electrical fields, the FRAM memory cell is much less sensitive to soft errors from injected energetic particles compared to SRAM memory cells (charged based) [2], [3]. Considering that particle-induced parasitic currents cannot alter the polarization of the storage element, the susceptibility of the device to radiation effects is mostly due to failures in the control logic circuitry and peripheral circuit components such as the address decoders, I/O buffers, power switch, or sense amplifiers.…”

mentioning

confidence: 99%

Heavy-Ion Radiation Impact on a 4 Mb FRAM Under Different Test Modes and Conditions

Gupta

Bosser

Tsiligiannis

et al. 2016

IEEE Trans. Nucl. Sci.

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International audienceThe impact of heavy-ions on commercial Ferroelectric Memories (FRAMs) is analyzed. The influence of dynamic and static test modes as well as several stimuli on the error rate of this memory is investigated. Static test results show that the memory is prone to temporary effects occurring in the peripheral circuitry, with a possible effect due to fluence. Dynamic tests results show a high sensitivity of this memory to switching activity of this peripheral circuitry

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Evaluation of recent technologies of non-volatile RAM

Cited by 9 publications

References 4 publications

Present and Future Non-Volatile Memories for Space

Present and Future Non-Volatile Memories for Space

Total ionizing dose sensitivity of function blocks in FRAM

Heavy-Ion Radiation Impact on a 4 Mb FRAM Under Different Test Modes and Conditions

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