Evaluation of PMMA Residues as a Function of Baking Temperature and a Graphene Heat-Free-Transfer Process to Reduce Them

Jia, Kunpeng; Luo, Jun; Hu, Rongyan; Zhan, Jun; Cao, Heshi; Su, Yajuan; Zhu, Huilong; Xie, Ling; Zhao, Chao; Chen, Dapeng; Ye, Tianchun

doi:10.1149/2.0011603jss

Cited by 7 publications

(8 citation statements)

References 20 publications

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“…Thermal chemical vapor deposition (CVD) grown graphene [31,32] was transferred onto a heavily p-type doped silicon wafer with 100 nm thermal oxide [33]. The optical microscopy (OM) and atomic force microscopy (AFM) were employed to inspect the morphology of transferred graphene, as shown in Figure 1a,b.…”

Section: Methodsmentioning

confidence: 99%

Enhanced End-Contacts by Helium Ion Bombardment to Improve Graphene-Metal Contacts

Jia

Zhan

et al. 2016

Nanomaterials

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Low contact resistance between graphene and metals is of paramount importance to fabricate high performance graphene-based devices. In this paper, the impact of both defects induced by helium ion (He+) bombardment and annealing on the contact resistance between graphene and various metals (Ag, Pd, and Pt) were systematically explored. It is found that the contact resistances between all metals and graphene are remarkably reduced after annealing, indicating that not only chemically adsorbed metal (Pd) but also physically adsorbed metals (Ag and Pt) readily form end-contacts at intrinsic defect locations in graphene. In order to further improve the contact properties between Ag, Pd, and Pt metals and graphene, a novel method in which self-aligned He+ bombardment to induce exotic defects in graphene and subsequent thermal annealing to form end-contacts was proposed. By using this method, the contact resistance is reduced significantly by 15.1% and 40.1% for Ag/graphene and Pd/graphene contacts with He+ bombardment compared to their counterparts without He+ bombardment. For the Pt/graphene contact, the contact resistance is, however, not reduced as anticipated with He+ bombardment and this might be ascribed to either inappropriate He+ bombardment dose, or inapplicable method of He+ bombardment in reducing contact resistance for Pt/graphene contact. The joint efforts of as-formed end-contacts and excess created defects in graphene are discussed as the cause responsible for the reduction of contact resistance.

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Section: Methodsmentioning

confidence: 99%

Enhanced End-Contacts by Helium Ion Bombardment to Improve Graphene-Metal Contacts

Jia

Zhan

et al. 2016

Nanomaterials

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“…f) Comparison of transfer techniques in terms of transferred area and consumed time in our work (red) and obtained from previous reports (navy blue). [ 8,9,12,18,35–42 ] The data points are labeled with the reference number from whence they came in brackets.…”

Section: Resultsmentioning

confidence: 99%

“…[23] Importantly, the uniform oxidation, realized by the water/ethanol mixture with a volume ratio of 1:1, enabled the crack-free delamination of graphene films from the surface of the Cu substrate. The successful delamination was assisted by [8,9,12,18,[35][36][37][38][39][40][41][42] The data points are labeled with the reference number from whence they came in brackets.…”

Section: Resultsmentioning

confidence: 99%

Rapid and Scalable Transfer of Large‐Area Graphene Wafers

et al. 2023

Advanced Materials

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Recently, scalable production of large‐area graphene films on metal foils with promising qualities is successfully achieved by eliminating grain boundaries, wrinkles, and adlayers. The transfer of graphene from growth metal substrates onto functional substrates remains one inescapable obstacle on the road to the real commercial applications of chemical vaport deposition (CVD) graphene films. Current transfer methods still require time‐consuming chemical reactions, which hinders its mass production, and produces cracks and contamination that strongly impede performance reproducibility. Therefore, graphene transfer techniques with fine intactness and cleanness of transferred graphene, and improved production efficiency would be ideal for the mass production of graphene films on destination substrates. Herein, through the engineering of interfacial forces enabled by sophisticated design of transfer medium, the crack‐free and clean transfer of 4‐inch‐sized graphene wafers onto silicon wafers within only 15 min is realized. The reported transfer method is an important leap over the long‐lasting obstacle of the batch‐scale graphene transfer without degrading the quality of graphene, bringing the graphene products close to the real applications.

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“…The removal of hBN was performed by placing the copper foil on an etching solution (mixture of 10 M aqueous H 2 O 2 solution, 10 M aqueous HCl solution, and water in the volume ratio of 1:1:11). The etchant solution has been, previously, used for cleaning backside graphene (supporting information S2) [36]. After rinsing with de-ionized water, the copper foil was totally removed through five-hours etching with iron nitrate solution.…”

Section: Bp-hbn Heterostructure Fabricationmentioning

confidence: 99%

Simple fabrication of air-stable black phosphorus heterostructures with large-area hBN sheets grown by chemical vapor deposition method

et al. 2016

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We have developed a facile and general method to passivate thin black phosphorus (BP) flakes with large-area high-quality monolayer hexagonal boron nitride (hBN) sheets grown by the chemical vapor deposition (CVD) method. In spite of the one-atom-thick structure, the high-quality CVD-grown monolayer hBN has proven to be useful to prevent the degradation of thin BP flakes exfoliated on substrates. Mechanically exfoliated BP flakes prepared on a Si substrate are covered by the monolayer hBN sheet to preserve (otherwise unstable) atomic layered BP flakes from degradation. The present technique can generally be applied to fabricating BP-based electronic devices with much easiness.

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Evaluation of PMMA Residues as a Function of Baking Temperature and a Graphene Heat-Free-Transfer Process to Reduce Them

Cited by 7 publications

References 20 publications

Enhanced End-Contacts by Helium Ion Bombardment to Improve Graphene-Metal Contacts

Enhanced End-Contacts by Helium Ion Bombardment to Improve Graphene-Metal Contacts

Rapid and Scalable Transfer of Large‐Area Graphene Wafers

Simple fabrication of air-stable black phosphorus heterostructures with large-area hBN sheets grown by chemical vapor deposition method

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