We have developed a facile and general method to passivate thin black phosphorus (BP) flakes with large-area high-quality monolayer hexagonal boron nitride (hBN) sheets grown by the chemical vapor deposition (CVD) method. In spite of the one-atom-thick structure, the high-quality CVD-grown monolayer hBN has proven to be useful to prevent the degradation of thin BP flakes exfoliated on substrates. Mechanically exfoliated BP flakes prepared on a Si substrate are covered by the monolayer hBN sheet to preserve (otherwise unstable) atomic layered BP flakes from degradation. The present technique can generally be applied to fabricating BP-based electronic devices with much easiness.
Large-area single-layer graphene can be grown on Cu foil by CVD, but for device applications, the layer must to be transferred onto an insulating substrate. As residual particles are often observed on transferred graphene, we investigated their origin using scanning electron microscopy and energy-dispersive X-ray spectrometry (EDX). The results show that these residual particles are composed either of silicon or an alloy of a few metals, and hence, likely originate from the quartz tube of the CVD furnace and the impurities contained in the Cu foil.
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