Evaluation of Metallic Nano-Lawn Structures for Application in Microelectronic Packaging

Fiedler, S.; Zwanzig, Michael; Schmidt, Ralf; Auerswald, Ellen; Klein, M.; Scheel, Wolfgang; Reichl, H.

doi:10.1109/estc.2006.280116

Cited by 15 publications

(6 citation statements)

References 32 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The nanowires were nearly 90° bended with the wire tips visible in the SEM images. The mechanical bending of the nanowires, pressed between two pads under a certain pressure was comparable to the finding in [15]. The bondline thickness was found to be much decreased for the samples (c) and (d) compared to (a) and (b), respectively.…”

Section: Bonding Pressure On Nw-acf Interconnectionsupporting

confidence: 82%

“…Electrical test with Kelvin probing was carried out with Cascade manual probe station and Agilent B1500 semiconductor parameter analyzer. For nanowire interconnects, bonding pressure below 100 MPa would reach the sufficient proximity to form joint [15]. The minimum applicable bonding force is 1.5 N with the lambda flip-chip bonder.…”

Section: Electrical Performance At Fine Pitchmentioning

confidence: 99%

See 1 more Smart Citation

Study of fine pitch micro-interconnections formed by low temperature bonded copper nanowires based anisotropic conductive film

Tao

Mathewson

Razeeb

2014

2014 IEEE 64th Electronic Components and Technology Conference (ECTC)

View full text Add to dashboard Cite

In this paper, Cu nanowire based anisotropic conductive film (ACF) has been systematically investigated in terms of its fine-pitch potential, electrical/ mechanical properties, process related issues and failure mechanisms. A test chip module including daisy-chain and 4-point structures was fabricated by electroplating and photolithography process, which has 160, 80, 40 and 30 µm bond pad pitches. The selection of membrane templates and the template based open/short failures have been discussed. Bond pads were finished with electroplated In to lower the bonding temperature and contact resistance. The electrical and mechanical performance of the interconnections has been studied in term of bonding force. The interconnect resistance of various pad sizes was 0.3-0.6 Ω per pad at the low bonding force of 1.5 N and dropped to 0.02-0.04 Ω per pad at the high bonding force of 10 N. The influence of bonding pressure on such nanowires formed interconnects was studied by microsectional analysis. For all pitch sizes, the electrical insulation was maintained for an applied voltage of 20 V. A shear strength of 1-5 MPa was achieved as a function of the bonding force and the fractural surface analysis verifies the Cu-In joint formed in such interconnections. IntroductionThe fabrication of stacked and vertically interconnected device layers (3D integration) with through Si via (TSV) technology [1] has provided a path to system scaling and performance enhancement. One of the key challenges in 3D integration is the fine pitch interconnection scheme, which has to accommodate various thermal and mechanical constraints, especially for the non-Si elements in the future 3D integrated package [2]. For advanced 3D stacking, various interconnection schemes and process technology have been proposed and most of them require a temperature higher than 250 °C and the underfill process during the bonding process [3,4]. As an alternative, anisotropic conductive film (ACF) can be a low-temperature, low-cost fine-pitch interconnection solution for future 3D integration. The conventional ACF, composed of randomly dispersed conductive micro particles in an adhesive polymer matrix, faces agglomeration problem when the size is reduced, resulting in potentially unstable electrical properties [5]. Moreover, the micro particles in the film have to be deformed to create electrical contact with high pressure, which constrains the minimum pitch size to ~ 100 µm for most commercial ACFs [6]. In order to further relax the thermal and mechanical constraints of interconnection process, nanowire based ACF (NW-ACF), containing metallic nanowire arrays vertically distributed in a porous polymer template, has been proposed as a low-temperature

show abstract

Section: Bonding Pressure On Nw-acf Interconnectionsupporting

confidence: 82%

Section: Electrical Performance At Fine Pitchmentioning

confidence: 99%

Study of fine pitch micro-interconnections formed by low temperature bonded copper nanowires based anisotropic conductive film

Tao

Mathewson

Razeeb

2014

2014 IEEE 64th Electronic Components and Technology Conference (ECTC)

View full text Add to dashboard Cite

show abstract

“…Many efforts have been done to apply the copper nanowire into the bonding technique in microelectronics [14][15][16] reports, the nanowire array was fabricated on a thin metcallic layer [17,18], which is difficult to be used for electronic connnections. In our previous research, copper nanowire array was fabricated on the silicon substrate directly.…”

Section: Introductionmentioning

confidence: 99%

Room temperature electrical bonding technique based on titled copper nanowire fastener with anisotropic adhesion properties

Wang

Hosoi

et al. 2012

2012 12th IEEE International Conference on Nanotechnology (IEEE-NANO)

View full text Add to dashboard Cite

this paper presented a room temperature bonding technique based on copper nanowire. A structure with copper nanowire array growing on the patterned areas of the silicon substrate was prepared through template-assistant electro-deposition. Through pressing the tilted and straight nanowire arrays against each other, the van der Waals interactions between the interconnected nanowires resulted in the mechanical bonding and electrical connectivity. This room temperature bonding technique exhibited anisotropic adhesion properties. The maximum adhesive strength of -9.36 N/cm 2 and electrical resistance of 0.3 n (areas, A-3.14 mm2 ) were obtained.Hence, it might have important implications for the assembly of components in the micro electronics.

show abstract

“…Among them, metallic NWs have attracted much attention for the various application fields, e.g., passive interconnects [1], superconducting material [2], thermoelectric material [3], and etc. The unique physical properties of nanomaterial originate from the size-effects due to the high specific surface area or quantum confinement effects [4,5].…”

Section: Introductionmentioning

confidence: 99%

Lattice deformation of Sn nanowires for the application to nano-interconnection technology

Shin

Song

2010

2010 Proceedings 60th Electronic Components and Technology Conference (ECTC)

View full text Add to dashboard Cite

Nano-interconnection technology is expected to replace some part of solder bump technology of electronic packaging in near future. Metallic nanowires (NWs) are one of the candidates for the electrical interconnection materials. In this study, as a well-known material for the interconnection in the electronic packaging, Sn was selected for the application to nano-interconnection technology. Since the physical properties of Sn NWs are important for the interconnection applications, we have already reported the size-dependency of melting behaviors and lattice parameters of single crystalline Sn NWs. In this study, the effects of the NW microstructure and the kinds of templates, which were used for the growth of Sn NWs, on the lattice parameter were investigated. Results showed that the single crystalline Sn NWs were elongated along the longitudinal direction up to 0.64 % depending upon their microstructures and kinds of the templates. The nanowire elongation was gradually reduced when the NW microstructure were single crystalline, granular, and bamboolike structures, in sequence.

show abstract

Evaluation of Metallic Nano-Lawn Structures for Application in Microelectronic Packaging

Cited by 15 publications

References 32 publications

Study of fine pitch micro-interconnections formed by low temperature bonded copper nanowires based anisotropic conductive film

Study of fine pitch micro-interconnections formed by low temperature bonded copper nanowires based anisotropic conductive film

Room temperature electrical bonding technique based on titled copper nanowire fastener with anisotropic adhesion properties

Lattice deformation of Sn nanowires for the application to nano-interconnection technology

Contact Info

Product

Resources

About