Evaluation of Mechanical Properties of MEMS Materials and Their Standardization

Tsuchiya, Toshiyuki

doi:10.1002/9783527622139.ch1

Cited by 11 publications

(11 citation statements)

References 19 publications

(15 reference statements)

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“…It has a mature low-pressure chemical vapor deposition (LPCVD) process and can be tuned to near-zero residual stress by annealing at 1050 • C [20,21]. The yield stress of polysilicon is 3 GPa [22], and a thickness of up to 2 µm can be reached in a single deposition cycle. Moreover, polysilicon can be easily wet-etched using a well-assessed alkaline-based solvent process, to release the sub-membrane.…”

Section: Device Fabrication Sequence and Simulationmentioning

confidence: 99%

MEMS Membranes with Nanoscale Holes for Analytical Applications

Bagolini

Correale²,

Picciotto

et al. 2021

Membranes

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Micro-electro-mechanical membranes having nanoscale holes were developed, to be used as a nanofluidic sample inlet in novel analytical applications. Nanoscopic holes can be used as sampling points to enable a molecular flow regime, enhancing the performance and simplifying the layout of mass spectrometers and other analytical systems. To do this, the holes must be placed on membranes capable of consistently withstanding a pressure gradient of 1 bar. To achieve this goal, a membrane-in-membrane structure was adopted, where a larger and thicker membrane is microfabricated, and smaller sub-membranes are then realized in it. The nanoscopic holes are opened in the sub-membranes. Prototype devices were fabricated, having hole diameters from 300 to 600 nm, a membrane side of 80 μm, and a simulated maximum displacement of less than 150 nm under a 1 bar pressure gradient. The obtained prototypes were tested in a dedicated vacuum system, and a method to calculate the effective orifice diameter using gas flow measurements at different pressure gradients was implemented. The calculated diameters were in good agreement with the target diameter sizes. Micro-electro-mechanical technology was successfully used to develop a novel micromembrane with nanoscopic holes, and the fabricated prototypes were successfully used as a gas inlet in a vacuum system for mass spectrometry and other analytical systems.

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Section: Device Fabrication Sequence and Simulationmentioning

confidence: 99%

MEMS Membranes with Nanoscale Holes for Analytical Applications

Bagolini

Correale²,

Picciotto

et al. 2021

Membranes

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“…In general, studies on mechanical properties were limited to internal stress measurements (Tsuchiya, 2008). With the advent of microelectromechanical system (MEMS) technology, the thin films started to be used as mechanical structures, which made fundamental the knowledge of their mechanical and electromechanical properties.…”

Section: Sic Film Deposition Processmentioning

confidence: 99%

Applications of SiC-Based Thin Films in Electronic and MEMS Devices

Fraga¹,

Pessoa²,

Massi³

et al. 2012

Physics and Technology of Silicon Carbide Devices

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The great development of thin film growth techniques has stimulated the industrial and academic researches about design, fabrication and test of thin film based devices. The replacement of the conventional bulk materials by thin films allows the fabrication of devices with smaller volume and weight, higher flexibility besides lower cost and good performance. It has been shown that the efficiency of thin film based devices is strongly dependent on their structural, electrical, mechanical and optical properties Fraga, a Fraga . At the same time that there is a trend in the miniaturization of electronic and electromechanical devices, there is also a considerable interest in the study of wide bandgap materials to replace the silicon as base material in these devices for harsh applications such as high temperatures and high levels of radiation Fraga, , Yeung, .Silicon carbide SiC has intrinsic properties that make it a material of great interest for microelectronic and MEMS Micro-Electro-Mechanical Systems applications. In the last years, there has been much debate in the literature about how the incorporation of dopant elements such as nitrogen, oxygen, aluminum, boron, phosphorus, etc. during the growth of SiC thin films by chemical vapor deposition CVD or physical vapor deposition PVD processes affects their properties. It has been noticed that the dopant incorporation allows controlling thin film properties such as optical bandgap and electrical conductivity, which are quite attractive because make possible to obtain semiconductor or insulator SiC-based films Alizadeh, Medeiros, . In general, the use of amorphous SiC films has been preferred due to relatively their low growth temperature, which guarantees a larger compatibility with silicon-based technology Hatalis, .Nowadays, SiC-based thin films, such as SiCN, SiCO, SiCNO, SiCB, SiCBN and SiCP, have been extensively used in electronic and MEMS devices either as a semiconductor or as an insulator, depending on the film composition. These films have been shown promising for applications in diodes, thin-film transistors TFTs and MEMS devices Yih, Patil, Hwang, Fraga, c .The goal of this chapter is to discuss the role of in situ incorporation of nitrogen, oxygen, aluminum, boron, phosphorus and argon on the properties of SiC films. Special attention is given to the low temperature SiC growth processes. An overview on the applications of SiCbased thin films in electronic and MEMS devices is presented and discussed. Our recent researches on heterojunction diodes and MEMS sensors are emphasized. . Dopant incorporation during growth of SiC thin films . . In situ dopingMost studies on SiC thin films, especially in their amorphous form, is not focused on intrinsic films. In general, the electrical properties of wide band gap semiconductor materials as the SiC are controlled by introducing dopants into the bulk material Oliveira, . Hence, determining the best material doping concentration is one important issue to be considered during a device development. SiC-based thin ...

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“…It requires high resonant frequency, wide scanning range and mechanical stability during operation, which highly depends on the mechanical elements of the micromirror. The CNTs-Ni composite can be one of candidates for some applications of the scanning micromirror in which the micromechanical elements of the micromirror are difficult to satisfy critical mechanical requirements [6].…”

Section: Introductionmentioning

confidence: 99%

Synthesis of carbon nanotubes-Ni composite for micromechanical elements application

Toda

Yamamoto

et al. 2015

2015 28th IEEE International Conference on Micro Electro Mechanical Systems (MEMS)

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We present the fabrication and characterization of a silicon micromirror with carbon nanotubes (CNTs)-nickel (Ni) composite beams, and evaluate the mechanical stability of the micromirror in terms of resonant frequency. A novel electroplating method is developed for the synthesis of the CNTs-Ni composite. The weight fraction of the CNTs in the electroplated composite is 2.6 wt%, and the ultramicroindentation hardness of the composite is 18.6 GPa. The maximum variation of the resonant frequency of the fabricated micromirror during a long term stability test is approximately 0.25%, and its scanning angle is approximately 20 o . It shows the potential ability of the CNTs-Ni composite for micromechanical elements application.

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Evaluation of Mechanical Properties of MEMS Materials and Their Standardization

Cited by 11 publications

References 19 publications

MEMS Membranes with Nanoscale Holes for Analytical Applications

MEMS Membranes with Nanoscale Holes for Analytical Applications

Applications of SiC-Based Thin Films in Electronic and MEMS Devices

Synthesis of carbon nanotubes-Ni composite for micromechanical elements application

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