Evaluation of ma-N 2400 series DUV photoresist for electron beam exposure

Elsner, Harald; Meyer, H.‐G.; Voigt, Anja; Grützner, Gabi

doi:10.1016/s0167-9317(99)00113-6

Cited by 18 publications

(14 citation statements)

References 5 publications

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“…23 Partially reduced peak intensities in the relative broad region of 1720 to 1000 cm −1 might result from PAC decomposition since deformation vibrations of −NH 2 or -NH or -CN stretching vibrations of the PAC are located in this region. 23,26,28 The peak intensities dedicated to the azide group of the PAC located at 2108 cm −1 (asymmetric stretching), 1340 to 1180 cm −1 (symmetric stretching) and ∼700 cm −1 (bending) decrease immensely. This behavior is consistent with the crosslinking mechanism of the negative photoresist.…”

Section: Influence Of Preparation Parameters On Ma-n 2405 Negative Rementioning

confidence: 99%

“…During DUV exposure, the azide groups of the PAC (R − N 3 ) release nitrogen and the resulting reactive nitrenes (R-N:) initiate the cross-linking of the resist. 23,[25][26][27] To ensure a proper cross-linking state by the applied exposure routine, IR spectroscopic measurements were performed before and after DUV exposure of the negative photoresist ma-N 2405. For that reason, the following conclusions about the polymer matrix state are drawn from the relevant vibration mode frequency bands as marked in Fig.…”

Section: Influence Of Preparation Parameters On Ma-n 2405 Negative Rementioning

confidence: 99%

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Ion beam planarization of optical aluminum surfaces

Ulitschka

Bauer

Frost

et al. 2020

J. Astron. Telesc. Instrum. Syst.

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For fabrication of high-performance mirror devices, technical aluminum alloys Al6061 or Al905 are widely used. The surface error topography after manufacturing by singlepoint diamond turning is applicable in the infrared spectral range. For increasing demands on the optical surface quality in the shortwave visible and ultraviolet spectral range, further improvement of the surface roughness is required. Hence, a promising alternative process to attain the required surface quality is evaluated. Within the ion beam planarization technique, a photoresist layer is deposited by conventional spin coating or spray coating technologies exhibiting an ultrasmooth surface. When removing the resist by reactive ion beam etch (RIBE) processing using nitrogen process gas, the ultrasmooth surface topography of the resist is transferred into the substrate. We optimized the photoresist thermal pretreatment to realize roughness preservation and a steady-state material removal rate during RIBE machining. The optimum preparation steps are explored based on roughness evaluation, chemical modification, and etch resistance of the negative photoresist. Reactive ion beam etching-based planarization is conducted on single-point diamond turned RSA Al905 and RSA Al6061 samples made of rapidly solidified aluminum (RSA) in a two-step process. The optimum process and the roughness evaluation are explored by topographic analysis applying a combination of white light interferometry and atomic force microscopy measurements. © The Authors. Published by SPIE under a Creative Commons Attribution 4.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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Section: Influence Of Preparation Parameters On Ma-n 2405 Negative Rementioning

confidence: 99%

Section: Influence Of Preparation Parameters On Ma-n 2405 Negative Rementioning

confidence: 99%

Ion beam planarization of optical aluminum surfaces

Ulitschka

Bauer

Frost

et al. 2020

J. Astron. Telesc. Instrum. Syst.

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“…Thus, tunnel junctions with an area of up to 0.15 µm 2 were fabricated and measured. To increase the reproducibility of the technology for manufacturing tunnel junctions, the electronic resist ma-N 2400 was tested [24]. The negative resist ma-N 2400 is used for both photolithography (DUV, 248 nm) and electron-beam lithography, but the sensitivity Various types of negative resist were used to shape the geometry of the tunnel junctions.…”

Section: Electron-beam Lithographymentioning

confidence: 99%

Fabrication of Superconducting Nb–AlN–NbN Tunnel Junctions Using Electron-Beam Lithography

et al. 2021

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Mixers based on superconductor–insulator–superconductor (SIS) tunnel junctions are the best input devices at frequencies from 0.1 to 1.2 THz. This is explained by both the extremely high nonlinearity of such elements and their extremely low intrinsic noise. Submicron tunnel junctions are necessary to realize the ultimate parameters of SIS receivers, which are used as standard devices on both ground and space radio telescopes around the world. The technology for manufacturing submicron Nb–AlN–NbN tunnel junctions using electron-beam lithography was developed and optimized. This article presents the results on the selection of the exposure dose, development time, and plasma chemical etching parameters to obtain high-quality junctions (the ratio of the resistances below and above the gap Rj/Rn). The use of a negative-resist ma-N 2400 with lower sensitivity and better contrast in comparison with a negative-resist UVN 2300-0.5 improved the reproducibility of the structure fabrication process. Submicron (area from 2.0 to 0.2 µm2) Nb–AlN–NbN tunnel junctions with high current densities and quality parameters Rj/Rn > 15 were fabricated. The spread of parameters of submicron tunnel structures across the substrate and the reproducibility of the cycle-to-cycle process of tunnel structure fabrication were measured.

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“…Each is a polymeric bonding agent and a photoactive compound. This resist is not chemically amplified 31 . After THz illumination, the resist is developed by ma-D 525 (Microchem), which is composed of tetramethylammonium hydroxide in aqueous solution.…”

Section: Introductionmentioning

confidence: 99%

Terahertz-driven polymerization of resists in nanoantennas

Park

Lee

Kang

et al. 2018

Sci Rep

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Plasmon-mediated polymerization has been intensively studied for various applications including nanolithography, near-field mapping, and selective functionalization. However, these studies have been limited from the near-infrared to the ultraviolet regime. Here, we report a resist polymerization using intense terahertz pulses and various nanoantennas. The resist is polymerized near the nanoantennas, where giant field enhancement occurs. We experimentally show that the physical origin of the cross-linking is a terahertz electron emission from the nanoantenna, rather than multiphoton absorption. Our work extends nano-photochemistry into the terahertz frequencies.

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Evaluation of ma-N 2400 series DUV photoresist for electron beam exposure

Cited by 18 publications

References 5 publications

Ion beam planarization of optical aluminum surfaces

Ion beam planarization of optical aluminum surfaces

Fabrication of Superconducting Nb–AlN–NbN Tunnel Junctions Using Electron-Beam Lithography

Terahertz-driven polymerization of resists in nanoantennas

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