Evaluation of interfacial misfit strain field of heterostructures using STEM nano secondary moiré method

Zhao, Yao; Yang, Yang; Wen, Hu; Liu, Chao; Huang, Xianfu; Liu, Zhanwei

doi:10.1039/d1cp05891f

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Efficient Recognition Of the 3d Shape And Affected Area Of D...1

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Cited by 4 publications

(2 citation statements)

References 22 publications

(24 reference statements)

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“…Fig. 8(a) shows the STEM secondary nano-moiré 37 obtained by further sampling the sequence multiplication moiré pattern maps. The 3D spatial distribution of dislocations in the region can be clearly identified from the secondary moiré.…”

Section: Efficient Recognition Of the 3d Shape And Affected Area Of D...mentioning

confidence: 99%

A STEM tomographic multiplication nano-moiré method

Zhao,

Wen,

Yang

et al. 2023

Nanoscale

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Section: Efficient Recognition Of the 3d Shape And Affected Area Of D...mentioning

confidence: 99%

A STEM tomographic multiplication nano-moiré method

Zhao,

Wen,

Yang

et al. 2023

Nanoscale

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“…In this work, we investigate the AlN growth on patterned substrates to determine the influence of local strain relaxation on the crystalline layer quality. This has been possible using the latest techniques developed in scanning transmission electron microscopes with aberration correction that allow us to monitor without drift or distortions the occurrence of fine moiré fringes at the few Ångstroms scale, as a result of interference between the crystal lattice and a fixed scan pattern. The scan rotation method has been proven to be useful in strain measurement − and defect magnification .…”

Section: Introductionmentioning

confidence: 99%

Atomic Plane Misorientation Assisted Crystalline Quality Improvement in Epitaxial Growth of AlN on a Nanopatterned Sapphire (0001) Surface for Deep Ultraviolet Photoelectric Devices

Deng

Xie

et al. 2023

ACS Appl. Nano Mater.

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The atomic-layer misorientation during the growth of a 5 μm thick AlN thin film on a patterned (0001) sapphire substrate was investigated by the scan rotation approach using a probe aberration-corrected scanning transmission electron microscope at a nanometer scale. Through the geometrical phase analysis of the resulting twisted atomic structure at different depths below the top surface, it is shown that over 10% of local tensile and compressive strain is balanced in a 1.6° twist of the c-planes within the first micron of AlN growth. As a consequence, the formation of threading dislocations is reduced. The in-plane twist is seen to decrease toward the layer surface down to 0.5°. Finally, growth has adopted the conventional step flow mechanism with a reduced density of emerging dislocations by the thickness of 5 μm. Our finding forecasts the possibility of understanding the relationship between atomic bilayer twist and local strain accommodation at a nanometer scale, which could provide guidance for achieving better crystal quality of AlN thin films on patterned substrates during epitaxy.

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Strain engineering in electrocatalysis: Strategies, characterization, and insights

Deng,

Xu,

Gomaa

et al. 2024

Nano Res.

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Evaluation of interfacial misfit strain field of heterostructures using STEM nano secondary moiré method

Abstract: STEM nano-moiré can achieve high-precision deformation measurement in a large field of view. In scanning moiré fringe technology, the scanning line and magnification of the existing transmission electron microscope (TEM)...

Cited by 4 publications

References 22 publications

A STEM tomographic multiplication nano-moiré method

A STEM tomographic multiplication nano-moiré method

Atomic Plane Misorientation Assisted Crystalline Quality Improvement in Epitaxial Growth of AlN on a Nanopatterned Sapphire (0001) Surface for Deep Ultraviolet Photoelectric Devices

Strain engineering in electrocatalysis: Strategies, characterization, and insights

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