2004
DOI: 10.1143/jjap.43.882
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Evaluation of InGaP/InGaAs/Ge Triple-Junction Solar Cell under Concentrated Light by Simulation Program with Integrated Circuit Emphasis

Abstract: The characteristics of a multi-junction solar cell under concentrated light were evaluated by Simulation Program with Integrated Circuit Emphasis (SPICE). We developed the multi-unit model and analyzed the affects of the chromatic aberration and intensity distribution for the multi-junction cells. In the multi-unit model, the same numbers of units as grid numbers are installed for every electrode, and the units were connected to each other via lateral resistances. In order to obtain the generation current from… Show more

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Cited by 73 publications
(48 citation statements)
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“…22 The breakdown of the p-n junctions under a reverse bias seen in Fig. 6 is also induced by tunnel effect for the heavy doping concentrations of the wafers used in this study.…”
Section: -3mentioning
confidence: 76%
“…22 The breakdown of the p-n junctions under a reverse bias seen in Fig. 6 is also induced by tunnel effect for the heavy doping concentrations of the wafers used in this study.…”
Section: -3mentioning
confidence: 76%
“…The actual performance of a concentrator system with high chromatic aberration is expected to be within these two extremes cases as already proven by experimental results (12). Predicting this behavior is not intuitive at all, therefore simulations based on distributed model are very useful to understand this phenomenon (2,11,(13)(14)(15)(16)(17)(18).…”
Section: Spatial and Spectral Non-uniform Light Distribution On Multimentioning
confidence: 90%
“…This type of formalism is widely used to simulate the performance of solar cells when the effect of a spatial variable need to be incorporated in the model. Such variable can be the design of the front metal grid, in order to minimise the effect of series resistances [13], the inhomogeneous illumination profile in concentrator devices and the impact of such inhomogeneity into the transport through the tunnel junctions [14], [15], or the distribution of defects or inhomogeneities [16]- [18].…”
Section: The Electrical Modelmentioning
confidence: 99%