Evaluation of IDEALSmile for 90-nm FLASH memory contact holes imaging with ArF scanner

Cantù, Pietro; Capetti, Gianfranco; Loi, Sara; Lupo, M.; Pepe, Annalisa; Saitoh, Kenji; Yamazoe, Kenji; Hasegawa, Yasuo; Iwasa, Junji; Toublan, Olivier

doi:10.1117/12.534065

Cited by 2 publications

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“…The technique combines a background grid of sub resolution holes in close proximity to printed contacts with a special off-axis illumination aperture, improving aerial image contrast at resolution limits for each kind of holes. Detailed information about a practical application is reported in [6]. …”

Section: Dipole Patterning Constrains For Contactsmentioning

confidence: 99%

Customized illumination schemes for critical layers of 90-nm node dense memory devices in ArF lithography: comparison between simulation and experimental results

et al. 2004

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Current 90nm Flash memory design introduces imaging critical points in several devices levels: active, poly, contacts, and first metallization. Among standard Resolution Enhancement Techniques (RET), Off-axis illuminations play a fundamental role, because they are capable of providing better imaging contrast and improved process latitude in low K 1 regime with very dense structures. Starting from the simulation study of real device layer geometries, object of this work is to propose a solution in terms of illumination schemes and mask choice (binary or halftone) for each critical layer, considering K 1 around 0.35 in ArF lithography. Dedicated off-axis illuminations will be compared to standard illumination modes, underlining the benefits in terms of ultimate resolution, process window and line edge roughness improvement. Experimental data confirmed the predicted gain in process robustness and, as expected, showed great line edge roughness improvement and less marginality to pattern collapse.

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Section: Dipole Patterning Constrains For Contactsmentioning

confidence: 99%

Customized illumination schemes for critical layers of 90-nm node dense memory devices in ArF lithography: comparison between simulation and experimental results

et al. 2004

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“…The effectiveness of this technology has already been demonstrated in the case of small and simple test patterns. We here address issues related to the implementation of such a solution to a real 90nm-node NOR FLASH memory device, 11) present issues related to the treatment of large layouts and propose a solution for the automatic generation of the mask. Finally, we show experimental results compared with those of conventional approaches.…”

Section: Introductionmentioning

confidence: 99%

Full-Chip Implementation of IDEALSmile on 90-nm-Node Devices by ArF Lithography

Yamazoe¹,

Cantù

Capetti

et al. 2005

Jpn. J. Appl. Phys.

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Contact holes are one of the most challenging features to be printed in the semiconductor manufacturing process. In 2002, Canon introduced a new technology, entitled innovative double effective-source aided lithography with single mask implemented lithographic enhancement (IDEALSmile), that was proven to be able to define contacts with high resolution and a sufficiently large through-pitch process window using a binary mask, modified illumination and single exposure, without any negative impact on throughput or any increase of cost of ownership. The technology was further improved in 2003 with the introduction of Enhanced IDEALSmile. STMicroelectronics, Mentor Graphics and Canon joined their competences to implement this technology to the production of devices. In this paper, we analyze the issues encountered and solutions developed to overcome problems raised in different areas. Experimental results are shown and compared with both expectations based on results of simulation and what is obtained by conventional approaches. Directions for future developments have been identified and are illustrated in their guidelines.

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Evaluation of IDEALSmile for 90-nm FLASH memory contact holes imaging with ArF scanner

Cited by 2 publications

References 0 publications

Customized illumination schemes for critical layers of 90-nm node dense memory devices in ArF lithography: comparison between simulation and experimental results

Customized illumination schemes for critical layers of 90-nm node dense memory devices in ArF lithography: comparison between simulation and experimental results

Full-Chip Implementation of IDEALSmile on 90-nm-Node Devices by ArF Lithography

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