Evaluation of extreme-ultraviolet lithography mask absorber pattern on multilayer phase defect using extreme-ultraviolet microscope

Hamamoto, Kazuhiro; Sakaya, Noriyuki; Hosoya, Morio; Kureishi, Mitsuhiro; Okubo, Ryo; Shoki, Tsutomu; Nagarekawa, Osamu; Kishimoto, J.; Watanabe, Takeo; Kinoshita, Hiroo

doi:10.1116/1.3179185

Cited by 5 publications

(3 citation statements)

References 9 publications

(2 reference statements)

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“…Figure 1 shows the configuration of the actinic EUV microscope (EUVM) [4][5][6][7][8][9][10][11][12][13][14][15][16][17] installed on the BL-3 beamline of the NewSUBARU synchrotron radiation (SR) facility. It consists of Schwarzschild optics, an X-Y-Z sample stage, a focus detector, an X-ray zooming tube connected to a charge-coupled device (CCD) camera, and an image processing computer.…”

Section: Euv Microscopementioning

confidence: 99%

Study on Critical Dimension of Printable Phase Defects Using an Extreme Ultraviolet Microscope: II. Definition of Printable Threshold Region for Hole-Pit Programmed Defects

Kamaji

Uno

Takase

et al. 2010

Jpn. J. Appl. Phys.

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This paper is concerned with the observation of phase defects in an extreme ultraviolet lithography (EUVL) mask using an EUV microscope developed by the University of Hyogo. It is very important to determine the type and size of defects on a substrate that are printable after deposition of a multilayer film. Thus, some mask blanks with programmed hole-pit defects with different widths and depths were fabricated by a new process. In addition, critical dimensions of a pit defect were investigated using the EUV microscope. As a result, 4.0-nm-deep hole-pit defects with widths larger than 35 nm were resolved. However, 4.0-nm-deep hole-pit defects with widths smaller than 25 nm were not resolved. On the other hand, 3.0- and 2.0-nm-deep hole-pit defects with widths larger than 60 nm were resolved. However, hole-pit defects with widths smaller than 40 nm were not resolved. Furthermore, the EUVM system was capable of clearly resolving 1.0-nm-deep hole-pit defects with widths larger than 70 nm. However, hole-pit defects with widths smaller than 60 nm were not resolved. From these results, we have determined the size of phase defects that are printable or not by observing phase defects that have various widths and depths on mask blanks utilizing the EUV microscope.

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Section: Euv Microscopementioning

confidence: 99%

Study on Critical Dimension of Printable Phase Defects Using an Extreme Ultraviolet Microscope: II. Definition of Printable Threshold Region for Hole-Pit Programmed Defects

Kamaji

Uno

Takase

et al. 2010

Jpn. J. Appl. Phys.

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“…[1][2][3][4][5][6][7] Because EUV light is absorbed by many materials, EUV lithography replaces the traditional transmissive mask blank with a reflective mask blank. [1][2][3][4][5][6][7] Because EUV light is absorbed by many materials, EUV lithography replaces the traditional transmissive mask blank with a reflective mask blank.…”

Section: Introductionmentioning

confidence: 99%

Influence of shield roughness on Mo/Si defect density for extreme ultraviolet lithography mask blanks

Kageyama

Yoshimoto

Matsuda

et al. 2013

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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The authors investigated the influence of surface roughness of stainless-steel shields in an ion beam sputtering chamber on the particle defect density of deposited 50 pairs of Mo/Si bilayer films ([Mo/Si] 50 ) used in extreme ultraviolet mask blanks. Shields with varying arithmetic average surface roughness (Ra range approximately 3 to 20 lm) were mounted close to the sputtering targets and the substrate, and along the vacuum chamber interior wall. Silicon-rich particles (Si and Si/Mo) with diameters in the range of several tens of nanometers or more were quantified within a 142 mmÂ 142 mm area of the prepared blank film using a mask blank inspection tool. Si-rich particle defect density was found to be proportional to the inverse square of the shield surface roughness, suggesting that Si-rich particles arise from the shield surface. The shields with roughness exceeding 8 lm effectively suppressed the accumulation of Si-rich particle defects on the mask blank film.

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“…Therefore, we have developed the EUV microscopes for actinic mask observation at BL3 beamline of NewSUBARU. The first system of the EUV microscope consists Schwarzschild objective and an electron zooming tube [19]. Phase defect printability was firstly investigated.…”

Section: Euv Microscopementioning

confidence: 99%

EUVL Research Activity at Center for EUV Lithography

Watanabe

Harada

2016

J. Photopol. Sci. Technol.

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The advanced feature size patterning process of semiconductor conductor devices has been strongly charged in the information-technology oriented society. Extreme ultraviolet lithography (EUVL) is expected as a leading candidate of the next generation lithography for semiconductor electronic devices. The technology issues in EUV lithographic are the development of 1) EUV light source with high power and high stability, 2) EUV resist with simultaneous achievement of high resolution, high sensitivity, low line width roughness (LWR), and low outgassing. Center for EUVL in University of Hyogo has played an important role in the research and development of EUV lithography in two decades. Research and development of EUV lithography toward HVM was started its development just before twenty years ago to develop full field exposure tool employing tree aspherical imaging optics. In University of Hyogo developed 1) large reflectometer for the reflectivity measurement of the collector mirror for the EUV light source, 2) the EUV resist evaluation system such as the EUV interference lithography and outgassing system using in-situ ellipsometer for the evaluation of EUV resist of 10 nm and below, and X-ray absorption fine structure for EUV resist chemical reaction analysis to increase EUV exposure sensitivity, 4) the defects inspection of the actinic blanks and patterned mask. As the results, those evaluation tool could contribute EUV lithographic technology to lead to the HVM of electronic devices.

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Evaluation of extreme-ultraviolet lithography mask absorber pattern on multilayer phase defect using extreme-ultraviolet microscope

Cited by 5 publications

References 9 publications

Study on Critical Dimension of Printable Phase Defects Using an Extreme Ultraviolet Microscope: II. Definition of Printable Threshold Region for Hole-Pit Programmed Defects

Study on Critical Dimension of Printable Phase Defects Using an Extreme Ultraviolet Microscope: II. Definition of Printable Threshold Region for Hole-Pit Programmed Defects

Influence of shield roughness on Mo/Si defect density for extreme ultraviolet lithography mask blanks

EUVL Research Activity at Center for EUV Lithography

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