Evaluation of electrical and photovoltaic behaviours as comparative of Au/n-GaAs (MS) diodes with and without pure and graphene (Gr)-doped polyvinyl alcohol (PVA) interfacial layer under dark and illuminated conditions

Çіçek, Osman; Tecimer, Habibe Uslu; Tan, Serhat Orkun; Altındal, Ş.; Uslu, İbrahım

doi:10.1016/j.compositesb.2016.05.042

Cited by 81 publications

(32 citation statements)

References 45 publications

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“…The fundamental requirements for the materials are high dielectric constant, easy production and low-cost. Usually, for this aim, metaldoped polymers were examined as potential materials for replacing the conventional SiO 2 due to their some excellent features such as low-cost, simple fabrication and flexibility [3,[8][9][10][11][12]. The high-dielectric interlayer can be used as an alternative to the conventional SiO 2 to decrease the serial resistance of the structure interface state (N ss ) and increase of C. The use of high-dielectric interlayer can significantly increase the value of C and hence, can be more storage charges or energy [3,9].…”

Section: Introductionmentioning

confidence: 99%

“…Among them, PVA has attraction and attention due to its high dielectric strength, good charge storage capacity and excellent durability [14,21,22]. Generally, the electrical conductivities of pure polymers are poor, but their conductivity can be enhanced by doping with some metals (i.e., Co, Ni, Zn and Bi) [4,[8][9][10][11][12]. Doping the polymers with suitable materials improves the charge-carrier transport ability in the host structure.…”

Section: Introductionmentioning

confidence: 99%

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A comparative study on dielectric behaviours of Au/(Zn-doped PVA)/n-4H-SiC (MPS) structures with different interlayer thicknesses using impedance spectroscopy methods

et al. 2018

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Three different thicknesses (50, 150 and 500 nm) Zn-doped polyvinyl alcohol (PVA) was deposited on n-4H-SiC wafer as interlayer by electrospinning method and so, Au/(Zn-doped PVA)/n-4H-SiC metal-polymer-semiconductor structures were fabricated. The thickness effect of Zn-doped PVA on the dielectric constant (ε), dielectric loss (ε), losstangent (tan δ), real and imaginary parts of electric modulus (M and M) and ac electrical conductivity (σ ac) of them were analysed and compared using experimental capacitance (C) and conductance (G/ω) data in the frequency range of 1-500 kHz at room temperature. According to these results, the values of ε and ε decrease with increasing frequency almost exponentially, σ ac increases especially, at high frequencies. The M and M values were obtained from the ε and ε data and the M and M vs. f plots were drawn for these structures. While the values of ε , ε and tan δ increase with increasing interlayer thickness, the values of M and M decrease with increasing interlayer thickness. The double logarithmic σ ac vs. f plots for each structure have two distinct linear regimes with different slopes, which correspond to low and high frequencies, respectively, and it is prominent that there exist two different conduction mechanisms. Obtained results were found as a strong function of frequency and interlayer thickness.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A comparative study on dielectric behaviours of Au/(Zn-doped PVA)/n-4H-SiC (MPS) structures with different interlayer thicknesses using impedance spectroscopy methods

et al. 2018

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“…[1][2][3][4] Polyvinyl alcohol (PVA) polymer, which is used frequently in the literature, is preferred by researchers due to its physical and chemical properties such as high water solubility, large crystalline range, processability, low cost and ease of production. 5,6 On the other hand, the low electrical conductivity of PVA can be increased up to 10 6 times with proper dopant material. 5,7 One of the most important reasons why SDs are still the topic of current research is that the currenttransport mechanisms (CMs) in the interface of M/S become complicated at low temperatures.…”

Section: Introductionmentioning

confidence: 99%

“…5,6 On the other hand, the low electrical conductivity of PVA can be increased up to 10 6 times with proper dopant material. 5,7 One of the most important reasons why SDs are still the topic of current research is that the currenttransport mechanisms (CMs) in the interface of M/S become complicated at low temperatures. Therefore, it is essential to peruse the I-V characteristics of SDs over a wide temperature range.…”

Section: Introductionmentioning

confidence: 99%

On the Multi-parallel Diodes Model in Au/PVA/n-GaAs Schottky Diodes and Investigation of Conduction Mechanisms (CMs) in a Temperature Range of 80–360 K

Baydilli

Kaymaz

Tecimer

et al. 2020

Journal of Elec Materi

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Au/PVA/n-GaAs (MPS) type Schottky diodes (SDs) were fabricated and investigated in a temperature range of 80-360 K to explain their possible conduction mechanisms (CMs). Three distinct linear regions with different slopes were observed in ln(I)-V plots. The first region (R1), is within the range of 0.22-0.60 V, the second region (R2), is within the range of 0.64-0.90 V, and the third region (R3), is within the range of 1.1-1.5 V. It was shown that both ideality factor (n) and zero-bias barrier height (U Bo) are strong functions of temperature for all three regions. It was noticed that n values decreased and U Bo values increased with increasing temperature. In order to ascertain the possible CMs, U Bo À n, À U Bo À q/2kT, and (n À1 À 1) À q/2kT plots were also examined. In each of these plots, two linear regions were obtained within each of the three regions. The region from 80-180 K is called the low-temperature range (LTR), and the region from 200-360 K is called the high-temperature range (HTR). It has been revealed that the reason for the deviation from the classical thermionic emission (TE) theory cannot be explained only by the existence of the interface layer, interface states (N SS) or quantum mechanical tunneling mechanisms, which can be also explained by the double Gaussian distribution (DGD) due to barrier inhomogeneity. Finally, the experimental Richardson constants (A*) were calculated from the interception point of the modified Richardson curve in LTR and HTR for all three regions. It was calculated as 6.22 and 8.13 A/cm 2 K 2 for RI, 7.77 and 8.14 A/cm 2 K 2 at R2, and 7.07 and 8.13 A/cm 2 K 2 at R3 for low-and high-temperature ranges, respectively. It is clear that especially HTR results are quite close to the known theoretical A* value of 8.16 A/cm 2 K 2 for n-GaAs.

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“…The most important reasons for choosing organic semiconductors are high cost, flexible and twistable structure, high loss ratio and high nonlinearity. Beside MS structures, with these important properties organic semiconductors are widely used in electronic and optoelectronic applications such as organic field effect transistors (OFET), organic light emitting diodes (OLED), solar cells, etc., [16].…”

Section: Introductionmentioning

confidence: 99%

The Analysis of The Researches on Metal- Semiconductor Structures with and without Interfacial Layer in Turkey

Tan

2019

Hittite J. Sci. Eng.

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M etal-semiconductor (MS) or Schottky structures, which form the basis of semiconductor base circuit elements, formed by the tight contact of metal and semiconductors instead of a semiconductor-semiconductor junction as in typical diodes constructed by p-type and n-type semiconductors (PN junction) in contact. In metal-semiconductor structures, typically used metals are gold (Au), silver (Ag), platinum (Pt), tungsten (W), aluminium (Al) and molybdenum (Mo) and semiconductors are gallium arsenide (GaAs), zinc selenide (ZnSe), cadmium telluride (CdTe) besides mostly used Silicon (Si). These structures can respond quickly to the transitions between conductivity and insulator states at high frequencies and become widespread in production and use in the semiconductor industry due to their significant advantages. The voltage drops across PN and Schottky junctions are approximately between 0.6

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Evaluation of electrical and photovoltaic behaviours as comparative of Au/n-GaAs (MS) diodes with and without pure and graphene (Gr)-doped polyvinyl alcohol (PVA) interfacial layer under dark and illuminated conditions

Cited by 81 publications

References 45 publications

A comparative study on dielectric behaviours of Au/(Zn-doped PVA)/n-4H-SiC (MPS) structures with different interlayer thicknesses using impedance spectroscopy methods

A comparative study on dielectric behaviours of Au/(Zn-doped PVA)/n-4H-SiC (MPS) structures with different interlayer thicknesses using impedance spectroscopy methods

On the Multi-parallel Diodes Model in Au/PVA/n-GaAs Schottky Diodes and Investigation of Conduction Mechanisms (CMs) in a Temperature Range of 80–360 K

The Analysis of The Researches on Metal- Semiconductor Structures with and without Interfacial Layer in Turkey

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