Evaluation of Damages and Pore-sealing Capabilities of Oxidizing and Reducing Etch Plasmas for Single and Dual Damascene Patterning of Porous Ultra-Low-k Materials

Ollier, Emmanuel; Clain, Mathieu; Fox, Robert; Brun, P.; Jullian, S.

doi:10.1557/proc-0914-f04-05

Cited by 2 publications

(1 citation statement)

References 2 publications

(1 reference statement)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…These changes indicate that the relatively weak, non‐polar SiC bonds (Figure 1) are broken leading to the formation of significantly more polar SiOH groups. Recently, similar plasma damage has been observed for other low‐ k /surface modification systems 28–32. The O/Si ratio changes from 1.2 for untreated MSQ to around 1.8 for plasma‐treated MSQ (Table 1).…”

Section: Resultssupporting

confidence: 72%

Effects of Plasma Exposure on SiCOH and Methyl Silsesquioxane Films

Silverstein

Shach-Caplan

Khristosov

et al. 2007

Plasma Processes & Polymers

View full text Add to dashboard Cite

The effects of plasma exposure (O2, Ar, H2, and CF4) on the surface chemistries, surface energies, and dielectric constants, k, of two low‐k SiCOH films (BD‐1 and BD‐2) and a methyl silsesquioxane (MSQ) control are described. Relatively non‐polar, low surface energy MSQ and BD‐2 exhibited significant changes when exposed to various plasmas: carbon depletion, oxygen enhancement, and increased surface energy. The higher surface energy BD‐1 has a more extensive SiOSi network structure, which was relatively insensitive to plasma exposure. BD‐1's relatively low k is indicative of a porous material. While most plasmas produced an increase in k, deposition of CFn species as a result of exposure to a CF4 plasma caused a slight decrease in k. The increase in k corresponded to an increase in the dispersive surface energy component.

show abstract

Section: Resultssupporting

confidence: 72%