Evaluation of commercially available SiC devices and packaging materials for operation up to 350°C

Analysis of 600 V/650 V SiC Schottky Diodes at Extremely High Temperatures

“…In addition, as the feasible JBS/ MPS structure discussed in Section IV, the inverse depletion region of p+n junction is another reason of leakage current. The reverse saturation current of p+n junction is due to the diffusion of minority carrier holes on the n-side and carrier electrons on the p-side, which is highly sensitive to temperature variations as (5) shows.…”

High-Temperature Electrical and Thermal Aging Performance and Application Considerations for SiC Power DMOSFETs

“…We have demonstrated in our previous simulation and validation work that, with these same high on-state resistances and temperature dependencies, the thermal transients in a high power automotive inverter drive application are both extremely high and fast, with thermal transients as high as 200 °C in 15 seconds occurring [24,25]. Accumulation of heat due to successive high magnitude heat transients must be avoided.…”

“…We therefore expect the diffusion of oxygen to be delayed by the die attach material and to occur first at the outer edges of the die. In a porous die attach microstructure, such as silver sintered bonds, there may be fast paths for oxygen diffusion, particularly if the microstructure has coarsened due to either high temperature cycling stresses [25] or high temperature storage stresses [26]. As mentioned in the introduction to this paper, much work has been done by other authors to evaluate oxygen barriers between the ohmic contact(s) and the final metallization layer, whether it be aluminum on the source contact side for wire bonding or silver on the drain side for soldering.…”

Degradation and Reliability of Bare Dies Operated up to 300°C

“…A number of authors have demonstrated the temperature dependency of SiC MOSFET power devices at higher than rated temperatures [2][3][4] and of issues such as threshold voltage shift and gate oxide failures at higher than application electric fields [5,6]. Operation in air at such temperatures is of interest for future power module assemblies because there are no suitable encapsulates or coatings available that will withstand such high temperatures for extended periods of time [7].…”