Evaluation of carrier collection probability in bifacial interdigitated-back-contact crystalline silicon solar cells by the internal quantum efficiency mapping method

Tachibana, Takeshi; Tanahashi, Katsuto; Mochizuki, Takayasu; Shirasawa, Katsuhiko; Takato, Hidetaka

doi:10.7567/jjap.57.040315

Cited by 6 publications

(4 citation statements)

References 22 publications

(17 reference statements)

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“…Then, plasma enhanced chemical vapor deposition (PECVD) SiN was deposited on front side as the antireflection coating, resulting the stack of Al 2 O 3 /SiN. 27,28 The rear side was also passivated with PECVD SiN antireflection coating. Al/Ag and Ag were then screen-printed on the front and rear sides, respectively, and co-firing was performed.…”

Section: Methodsmentioning

confidence: 99%

Effect of Oxygen Precipitation in Silicon Wafer on Electrical Characteristics of Fully Ion-Implanted n-Type PERT Solar Cells

Tanahashi

Tachibana

Sueoka

et al. 2019

ECS J. Solid State Sci. Technol.

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Fully ion-implanted n-type PERT solar cells with boron-implanted emitter and phosphorus-implanted back surface field were fabricated on the n-type silicon wafers obtained from the top part of the magnetic field-applied Czochralski ingot. It was observed that the electrical parameters are widely dispersed; among 11 solar cells, the best performing achieved 20.4% front side conversion efficiency, whereas the worst achieved 19.0%. Although the silicon wafers had low oxygen concentrations of 3–4 × 1017 atoms/cm3, the density of oxygen precipitates in the silicon wafers was on the order of 109 /cm3 as a consequence of the fully ion-implanted n-type PERT silicon solar cell processes. In addition, it was observed that the front side conversion efficiencies of the solar cells depended on the density of oxygen precipitates. Furthermore, the behavior of the oxygen precipitation during the fabrication processes of the solar cell is discussed.

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Section: Methodsmentioning

confidence: 99%

Effect of Oxygen Precipitation in Silicon Wafer on Electrical Characteristics of Fully Ion-Implanted n-Type PERT Solar Cells

Tanahashi

Tachibana

Sueoka

et al. 2019

ECS J. Solid State Sci. Technol.

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“…Details of our fabrication process were reported in a previous paper. 22) In addition, details of electrical shading loss were investigated by an internal quantum efficiency (IQE) mapping system. 23,24) The electrical shading loss at the busbar region was suppressed by using the multi-metallization concept; 25) however, the electrical shading loss at the finger region remained.…”

Section: Introductionmentioning

confidence: 99%

Investigation of electrical shading loss of bifacial interdigitated-back-contact (IBC) crystalline silicon solar cells with screen-printed electrode

Tachibana¹,

Shirasawa²,

Takato³

2020

Jpn. J. Appl. Phys.

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N-type bifacial interdigitated-back-contact (IBC) crystalline silicon solar cells were processed with screen-printed electrodes. The bifacial IBC cells resulted in a drastic decrease of the electrical shading loss at the finger region with decreasing pitch on the rear side. This loss was dominated by the width of the base region. In addition, passivation properties also affected carrier recombination in the base region. A narrower base region and smaller pitch led to higher internal quantum efficiency and low series resistance. Cell efficiency of over 22% was obtained for the bifacial IBC crystalline silicon solar cells with a base region width of 250 μm and pitch of 1250 μm. The IQE values above the emitter and base region at medium wavelengths were over 95% and 90%, respectively. Using these cells, a mini-module showing 19.4% module efficiency with 78.1% FF was created.

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“…Although the IBC solar cells can yield more photogenerated carriers as a result of the elimination for optical shading loss, the carriers have various losses before being collected by the electrodes, such as Shockley–Read–Hall (SRH) loss, Auger recombination, interface recombination, and non‐ohm‐contact recombination loss. The continuous reduction of carrier recombination losses has always been a subject for scientific research institutions and enterprises .…”

Section: Introductionmentioning

confidence: 99%

High‐Efficiency Interdigitated Back Contact Silicon Solar Cells with Front Floating Emitter

Ding

Lin

Liu

et al. 2019

Physica Status Solidi (a)

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Silicon interdigitated back contact (IBC) solar cells with front floating emitter (FFE‐IBC) put forward a new carrier transport concept of “pumping effect” for minority carriers compared with traditional IBC solar cells with front surface field (FSF‐IBC). Herein, high‐performance FFE‐IBC solar cells are achieved theoretically combining superior crystalline silicon quality, front surface passivation, and shallow groove structure using 2D device model. The improvement of minority carrier transport capacity is realized in the conductive FFE layer through optimizing the doping concentration and junction depth. It is shown that the shallow groove on the rear side of FFE‐IBC solar cells can effectively enhance the carrier collection ability by means of minimizing the negative impact of undiffused gap or surface p–n junction. The high efficiency exceeding 25% can be realized on silicon FFE‐IBC solar cells with the novel cell structure and optimized cell parameters, where the back surface field and emitter region width can be made for the same with only a slight sacrifice of photocurrent density and conversion efficiency. It is demonstrated theoretically that the realization of high‐efficiency and low‐cost silicon IBC solar cells is feasible due to the increase of the module fabrication tolerance.

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Evaluation of carrier collection probability in bifacial interdigitated-back-contact crystalline silicon solar cells by the internal quantum efficiency mapping method

Cited by 6 publications

References 22 publications

Effect of Oxygen Precipitation in Silicon Wafer on Electrical Characteristics of Fully Ion-Implanted n-Type PERT Solar Cells

Effect of Oxygen Precipitation in Silicon Wafer on Electrical Characteristics of Fully Ion-Implanted n-Type PERT Solar Cells

Investigation of electrical shading loss of bifacial interdigitated-back-contact (IBC) crystalline silicon solar cells with screen-printed electrode

High‐Efficiency Interdigitated Back Contact Silicon Solar Cells with Front Floating Emitter

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