Evaluation of aluminum film properties and microstructure for replacement metal gate application at 28nm technology node

Análisis no lineal estático con empuje incremental para la evaluación del nivel de desempeño de una edificación típica habitacional de muros de hormigón armado

“…El diseño preliminar fue llevado a cabo considerando principalmente la NCh433 (2009), DS60 (2011) y DS61 (2011), a través de un análisis modal espectral. Con un aspecto de forma mayor a 2.6 clasifica como slender walls, donde las deformaciones por flexión son las principales contribuyentes de las deformaciones laterales (Huang et al, 2011).…”

W versus Co–Al as Gate Fill-Metal for Aggressively Scaled Replacement High-k/Metal Gate Devices for (Sub-)22 nm Technology Nodes

“…Ti formed by physical vapor deposition (PVD) has however been reported to require a certain thickness to ensure viable wettability for Al reflow to occur, typically creating an overhang at the top of gates which leads to gate pinch-off for the narrower gates, and therefore limits its scalability. 12,15) Preventing impact of the fill-metal (Al) on the gate dielectric and on the effective work function (EWF) of the RMG stack, i.e., on device parameters, is another important and strict criteria to meet. W-filled RMG devices have also been demonstrated, 13,[16][17][18] and we will further explore in this work W films potential to allow further options for channel stress enhancement thanks to their high intrinsic stress.…”