Evaluation of a positive tone chemically amplified deep UV resist for E-beam applications

Zandbergen, Peter; Dijkstra, Han J.

doi:10.1016/0167-9317(94)90160-0

Cited by 11 publications

(3 citation statements)

References 1 publication

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“…i-line stepper lithography offers a higher throughput but is limited in resolution. In the mid-1990s a new lithography process combining UV and electron beam exposure on just one resist layer has been presented in several papers [7][8][9]. This kind of approach is called intra-level mix and match lithography (ILM&M) and has the advantage of time saving because only structures below the UV lithography's resolution limit are written by EBL whereas structures above the resolution limit of UV lithography are exposed by UV radiation [2,[9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Development of an e-beam/i-line stepper intra-level mix and match approach with the photoresist mr-EBL 6000.5 for PIC related structures such as waveguides, ring resonators and coupling structures

Reinhardt,

Helke,

Schermer

et al. 2023

38th European Mask and Lithography Conference (EMLC 2023)

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Section: Introductionmentioning

confidence: 99%

Development of an e-beam/i-line stepper intra-level mix and match approach with the photoresist mr-EBL 6000.5 for PIC related structures such as waveguides, ring resonators and coupling structures

Reinhardt,

Helke,

Schermer

et al. 2023

38th European Mask and Lithography Conference (EMLC 2023)

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“…[2][3][4][5][6][7][8] It combines EBDW and DUV lithographic processes. The usual (inter-level) mix-and-match lithography also combines EBDW and DUV lithographies, but in this technique they are used to separately expose the different layers.…”

Section: Introductionmentioning

confidence: 99%

Intra-Level Mix-and-Match Lithography Process for Fabricating Sub-100-nm Complementary Metal-Oxide-Semiconductor Devices using the JBX-9300FS Point-Electron-Beam System

Narihiro¹,

Wakabayashi²,

Ueki³

et al. 2000

Jpn. J. Appl. Phys.

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To increase the throughput of electron beam lithography used to fabricate sub-100-nm patterns, we developed an electron beam and deep UV intra-level mix-and-match lithography process, that uses the JBX-9300FS point-electron-beam system and a conventional KrF stepper. Pattern data preparation was improved for sub-100-nm patterns. To reduce the effect of line width variation caused by post-exposure delay on complementary metal-oxide-semiconductor (CMOS) devices, we first exposed KrF patterns and then added another post-exposure bake before the electron beam (EB) exposure. We have used this technique to expose the gate layer of sub-100-nm CMOS devices. When we set the threshold size between EB and KrF patterns at 0.16 µm, the throughput of electron beam lithography was about threefold that of the full exposure by the electron beam lithography process. Sub-50-nm CMOS devices with high drive current were successfully fabricated.

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“…[1][2][3] Another reason why resists designed for DUV are appropriate for electron-beam lithography applications could be found in the similar mechanisms of latent image formation. The most severe limitation of this technology is its slow exposure speed.…”

Section: Introductionmentioning

confidence: 99%

Use of positive and negative chemically amplified resists in electron-beam direct-write lithography

Tritchkov

Jonckheere

hove

1995

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inThree-dimensional electron-beam lithography using an all-dry resist process This article describes the performance of available deep-ultraviolet ͑UV͒ resists for electron-beam direct-write lithography applications. Shipley XP9402, JSR KRF-K2G, and JSR KRF-L7 positive resists were evaluated for dark-field layers and Shipley XP90166 negative resist for clear-field layers. We investigate in detail the resolution capability, sensitivity, exposure latitudes and proximity, and postexposure delay ͑PED͒ time stability for isolated and dense features, as well as for contact holes. The influence of baking conditions on resolution and stability will be described. PED time effect in air and vacuum is measured for features with dimensions down to 0.2 m. No linewidth variations are observed down to 200 nm feature size with XP9402 for a delay time of 1 h in air if the postexposure bake ͑PEB͒ is done at low pressure in He ambience. Feature sizes down to 0.25 m are kept within Ϯ10% of the coded size, for a PED in air of 90 min if the PEB is done using a conventional hot plate in air. A process for printing 0.2 m contact holes is established. Resolution down to 0.15 m for dense, 0.12 m for isolated features, and 0.2 m for contact holes is obtained with KRF-K2G for PED of 1 1 2 h in air using a top coating. PED stability of more than 2 h and resolution down to 0.2 m for contact holes is obtained with KRF-L7 without applying a top coating. For clear-field layers we focus on a negative tone process. Resolution and process latitude issues using reduced resist thickness will be described. With 560-nm-thick XP90166, resist lines smaller than 0.2 m are resolved over polytopography with better than 25% exposure latitude. Further reducing the resist thickness to 500 nm, poly-Si gates with size down to 0.15 m are defined on the shift register of a 0.25 m random logic complementary metal-oxide-semiconductor design.

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Evaluation of a positive tone chemically amplified deep UV resist for E-beam applications

Cited by 11 publications

References 1 publication

Development of an e-beam/i-line stepper intra-level mix and match approach with the photoresist mr-EBL 6000.5 for PIC related structures such as waveguides, ring resonators and coupling structures

Development of an e-beam/i-line stepper intra-level mix and match approach with the photoresist mr-EBL 6000.5 for PIC related structures such as waveguides, ring resonators and coupling structures

Intra-Level Mix-and-Match Lithography Process for Fabricating Sub-100-nm Complementary Metal-Oxide-Semiconductor Devices using the JBX-9300FS Point-Electron-Beam System

Use of positive and negative chemically amplified resists in electron-beam direct-write lithography

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