2005
DOI: 10.1016/j.tsf.2005.02.032
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Evaluating substrate bias on the phase-forming behavior of tungsten thin films deposited by diode and ionized magnetron sputtering

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Cited by 28 publications
(19 citation statements)
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“…On the other hand, the XRD spectrum of the barrier layer shows no peaks revealing its amorphous structure. The formation of βphase depends on the partial pressure of oxygen (or base pressure) in the chamber, the film thickness, substrate bias and deposition rate/deposition power [22][23][24].…”
Section: Structurementioning
confidence: 99%
See 1 more Smart Citation
“…On the other hand, the XRD spectrum of the barrier layer shows no peaks revealing its amorphous structure. The formation of βphase depends on the partial pressure of oxygen (or base pressure) in the chamber, the film thickness, substrate bias and deposition rate/deposition power [22][23][24].…”
Section: Structurementioning
confidence: 99%
“…The decrease in the emissivity obtained with the vacuum annealing also supports this conclusion. The β-W phase has higher electrical resistivity than α-W phase [24,28], and the mentioned phase transformation contributes to the resistivity decrease of the W layer and consequent emissivity decrease.…”
Section: Thermal Stabilitymentioning
confidence: 99%
“…Reduced tungsten has a stable α-W phase while spheroidized tungsten consists of α-W phase and β-W phase. Meta-stable β-W phase results from the condensed nano-particles which covers the surface of spherical micro-particle [8]. In addition to morphological change, purification of feedstock is another advantage of thermal plasma spheroidization process.…”
Section: Resultsmentioning
confidence: 99%
“…In this work, we investigate the CTE and the residual stresses of tungsten (W) coatings deposited by Pulsed Laser Deposition (PLD). W coatings are of particular interest in a wide range of technological applications, such as in microelectronic and optoelectronic devices, as absorption layers in X-ray lithography [22,23,24], and in nuclear fusion energy [25,26,27]. Thanks to the high versatility of PLD in tuning many process parameters (e.g.…”
Section: Introductionmentioning
confidence: 99%