EUV lithography: NXE platform performance overview

Peeters, Rudy; Lok, Sjoerd; Mallman, Joerg; Noordenburg, Martijn van; Harned, Noreen; Kuerz, Peter; Lowisch, Martin; Setten, Eelco van; Schiffelers, Guido; Pirati, Alberto; Stoeldraijer, Judon; Brandt, David C.; Farrar, Nigel R.; Fomenkov, Igor V.; Boom, H.B.K.; Meiling, H.; Kool, Ron

doi:10.1117/12.2046909

Cited by 36 publications

(23 citation statements)

References 7 publications

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“…Alternate low-k ES materials.-Due to continued delays in EUV lithography, 497 semiconductor manufacturers have been forced to N3042 ECS Journal of Solid State Science and Technology, 4 (1) N3029-N3047 (2015) implement various forms of pitch division patterning schemes. 498,499 In some cases, 4X multiple patterning schemes are being considered for <22 nm technology nodes.…”

Section: 15mentioning

confidence: 99%

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

King

2014

ECS J. Solid State Sci. Technol.

131

115

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Over the past decade, the primary focus for improving the performance of nano-electronic metal interconnect structures has been to reduce the impact of resistance-capacitance (RC) delays via utilizing insulating dielectrics with ever lower values of dielectric permittivity. The integration and implementation of such low dielectric constant (i.e. low-k) materials has been fraught with numerous challenges. For intermetal and interlayer (ILD) low-k dielectrics, these challenges have been largely associated to integration with metal interconnect fabrication processes and well documented and reviewed in the literature. Although equally important, less attention has been given to other low-k dielectrics utilized in metal interconnect structures that are commonly referred to as low-k dielectric barriers (DB), etch stops (ES), and/or Cu capping layers (CCL). These materials present numerous challenges as well for integration into metal interconnect fabrication processes. However, they also have more stringent integrated functionality requirements relative to low-k ILD materials that serve only a basic purpose of electrically isolating adjacent metal lines. In this article, we review the integration challenges and associated integrated functionality requirements for low-k DB/ES/CCL materials with a focus on the current status and future direction needed for these materials to facilitate both Moore's law (i.e. More Moore) and More than Moore scaling.

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Section: 15mentioning

confidence: 99%

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

King

2014

ECS J. Solid State Sci. Technol.

131

115

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“…While the detailed design of the scanner is not published, the power on such a reticle may be estimated based on public information. The throughput of the scanner at 250W is 125 wafers per hour [10]. This means the scanner exposes 9 m 2 /h of resist.…”

Section: System Requirementsmentioning

confidence: 99%

A new mask exposure and analysis facility

et al. 2014

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The introduction of ever higher source powers in EUV systems causes increased risks for contamination and degradation of EUV masks and pellicles. Appropriate testing can help to inventory and mitigate these risks. To this end, we propose EBL2: a laboratory EUV exposure system capable of operating at high EUV powers and intensities, and capable of exposing and analyzing EUV masks. The proposed system architecture is similar to the EBL system which has been operated jointly by TNO and Carl Zeiss SMT since 2005. EBL2 contains an EUV Beam Line, in which samples can be exposed to EUV irradiation in a controlled environment. Attached to this Beam Line is an XPS system, which can be reached from the Beam Line via an in-vacuum transfer system. This enables surface analysis of exposed masks without breaking vacuum. Automated handling with dual pods is foreseen so that exposed EUV masks will still be usable in EUV lithography tools to assess the imaging impact of the exposure. Compared to the existing system, large improvements in EUV power, intensity, reliability, and flexibility are proposed. Also, in-situ measurements by e.g. ellipsometry is foreseen for real time monitoring of the sample condition. The system shall be equipped with additional ports for EUVR or other analysis tools. This unique facility will be open for external customers and other research groups.

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“…The resolution of an EUV lithographic system depends on the NA and resolution enhancement technologies. Combined with resolution enhancement technologies such as off-axis illumination and optical proximity correction, 13 this six-mirror objective with an NA of 0.5 could provide a potential solution for 11-nm node EUV lithography. …”

Section: Performancementioning

confidence: 99%

Designing projection objectives for 11-nm node of extreme ultraviolet lithography

Cao

Liu

2014

J. Micro/Nanolith. MEMS MOEMS

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Abstract. Extreme ultraviolet (EUV) lithography is a promising candidate for next-generation lithography. To achieve an 11-nm node, a six-mirror EUV projection objective with a numerical aperture (NA) of 0.5 is designed with the grouping design method. In this design, pupil obscuration is introduced to decrease the angular spread on the mirrors, which still makes the six-mirror objective with aspheric surfaces sufficient for aberration correction. The grouping design allocates the complexity of designing a whole system to each of the mirror groups and could compatibly apply to designing EUV projection objectives with obscuration. The ×8 reduction design serves as an example for illustrating the grouping design principles for this type of system. In addition, the specific design forms with different reductions are presented and discussed. Design of these six-mirror objective systems provides potential solutions for 11-nm node EUV lithography.

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EUV lithography: NXE platform performance overview

Cited by 36 publications

References 7 publications

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

A new mask exposure and analysis facility

Designing projection objectives for 11-nm node of extreme ultraviolet lithography

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