EUV Interference Lithography for 1X nm

The advanced feature size patterning process of semiconductor conductor devices has been strongly charged in the information-technology oriented society. Extreme ultraviolet lithography (EUVL) is expected as a leading candidate of the next generation lithography for semiconductor electronic devices. The technology issues in EUV lithographic are the development of 1) EUV light source with high power and high stability, 2) EUV resist with simultaneous achievement of high resolution, high sensitivity, low line width roughness (LWR), and low outgassing. Center for EUVL in University of Hyogo has played an important role in the research and development of EUV lithography in two decades. Research and development of EUV lithography toward HVM was started its development just before twenty years ago to develop full field exposure tool employing tree aspherical imaging optics. In University of Hyogo developed 1) large reflectometer for the reflectivity measurement of the collector mirror for the EUV light source, 2) the EUV resist evaluation system such as the EUV interference lithography and outgassing system using in-situ ellipsometer for the evaluation of EUV resist of 10 nm and below, and X-ray absorption fine structure for EUV resist chemical reaction analysis to increase EUV exposure sensitivity, 4) the defects inspection of the actinic blanks and patterned mask. As the results, those evaluation tool could contribute EUV lithographic technology to lead to the HVM of electronic devices.

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“…The replicated 15 nm L/S and 28 nm hole resist patterns on a silicon wafer are shown in Figs. 6 and 7, respectively [8,9].…”

Section: Euv Interference Lithographymentioning

confidence: 99%

EUVL Research Activity at Center for EUV Lithography

Watanabe

Harada

2016

J. Photopol. Sci. Technol.

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“…The EUV interference lithography had been developed and replicated 15 nm line and space (L/S) resist pattern by using two window-type transmission-diffraction grating (TDG) on which has 30 nm L/S grating pattern. In addition, 28-nm-diameter-hole resist pattern had been replicated by four window-type TDG which has 40 nm L/S grating pattern [5,6,7]. The replicated 15 nm L/S and 28 nm hole resist patterns on a silicon wafer are shown in Fig.…”

Section: Introductionmentioning

confidence: 99%

Development of Transmission Grating for EUV Interference Lithography of 1X nm HP

Fukui

Tanino

Fukuda

et al. 2015

J. Photopol. Sci. Technol.

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The advanced feature size patterning process of semiconductor conductor devices was being charged with the important role with development of an information-technology oriented society. Extreme ultraviolet lithography (EUVL) is expected as a leading candidate of the next generation lithography for semiconductor electronic devices. The development of EUV resist which has high resolution, high sensitivity, low LWR, and low out gassing is a second critical issue of the EUVL. Development of the two-beam interference exposure tool using the EUV light has been upgraded for the critical dimension of 10-nm-order in EUV resist patterining process. This tool was installed at the 10.8-nm-long undulator beamline BL09B of NewSUBARU synchrotron radiation facility. Using this EUV interference lithographic method, 15 nm hp resist pattern had been replicated on a silicon wafer. The transmission grating fabrication is the most significant key technology in the EUV interference lithography. The advanced fabrication process is applied for the transmission-grating fabrication for the EUV resist patterning beyond the feature size of 15 nm, such as 12.5 and 10 nm.

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“…EUV lithography (EUVL) will be used from the 16-nm-technology node of the semiconductor high volume manufacturing (HMV), such as a memory and central processing unit (CPU) [1][2][3]. The first top issue of the EUVL is to achieve the high power and stability of the EUV source, such as laser-produced-plasma (LPP) [4,5].…”

Section: Introductionmentioning

confidence: 99%

EUV Resist Chemical Analysis by Soft X-ray Absorption Spectroscopy for High Sensitivity Achievement

Emura

Watanabe

Yamaguchi

et al. 2014

J. Photopol. Sci. Technol.

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Simultaneous achievement of high sensitivity and low line edge roughness (LWR) is necessary in EUV resist. The chemical reaction analysis of EUV (Extreme Ultraviolet) chemical amplified (CA) resist and acid diffusion length evaluation was carried out. In order to achieve low LWR of the CA resist, the large chemical structure of the anion of photoacid generator (PAG) is required for shortening the acid diffusion length. On the other hand, in order to increase the sensitivity, on the basis of the chemical reaction analysis using the soft x-ray absorption spectroscopy, the decomposition reaction of the large chemical structure of the PAG anion should be taken in account in addition of ionization reaction. However, if the decomposition reaction occur, the acid diffusion length will become shorter than that as expected. It is found that the Imidate-type of anion of PAG has high sensitivity and short diffusion length. The chemical reaction analysis by the soft x-ray absorption spectroscopy using the synchrotron radiation with the combination analysis of the acid diffusion are useful method for the mitigation of high sensitivity and low LWR.

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EUV Interference Lithography for 1X nm

Cited by 25 publications

References 9 publications

EUVL Research Activity at Center for EUV Lithography

EUVL Research Activity at Center for EUV Lithography

Development of Transmission Grating for EUV Interference Lithography of 1X nm HP

EUV Resist Chemical Analysis by Soft X-ray Absorption Spectroscopy for High Sensitivity Achievement

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