Eu³⁺-Doped Wide Band Gap Zn₂SnO₄ Semiconductor Nanoparticles: Structure and Luminescence

Abstract

Figure S1. (a) The diffuse reflectance spectra and (b) plot of [F(R)•hν] 2 vs. photon energy of Zn 2 SnO 4 and Zn 2 SnO 4 :Eu nanoparticles.

Effects of the Concentration of Eu3+ Ions and Synthesizing Temperature on the Luminescence Properties of Sr2−xEuxZnMoO6 Phosphors

“…Consequently, as both of these sites are centrosymmetric, electric dipole transitions ( 5 D0-7 Fj=0,2, only the 5 D0-7 F2 transition is observed in this study) are forbidden and, as such, should not appear in the spectra. As the synthesizing temperature is 900 °C, the fact that the 5 D0-7 F2 electric dipole transition at 615 nm prevails over the 5 D0-7 F1 magnetic dipole transition at 595 nm in the case of Sr2−xEuxZnMoO6 phosphors leads us to the conclusion that the Eu 3+ ions are generally located in a disordered manner in the Sr2−xEuxZnMoO6 powders [27]. The charge-compensating oxygen vacancies surrounding the Eu 3+ ions will lead to the deviation from the point symmetry and relaxation of electric dipole transitions selection rules, with the appearance of the 5 D0-7 F2 transition lines in the spectra [27].…”

“…As the synthesizing temperature is 900 °C, the fact that the 5 D0-7 F2 electric dipole transition at 615 nm prevails over the 5 D0-7 F1 magnetic dipole transition at 595 nm in the case of Sr2−xEuxZnMoO6 phosphors leads us to the conclusion that the Eu 3+ ions are generally located in a disordered manner in the Sr2−xEuxZnMoO6 powders [27]. The charge-compensating oxygen vacancies surrounding the Eu 3+ ions will lead to the deviation from the point symmetry and relaxation of electric dipole transitions selection rules, with the appearance of the 5 D0-7 F2 transition lines in the spectra [27]. Additionally, the Eu 3+ luminescent centers contributing to the 5 D0-7 F2 transition line are probably located at the Sr2−xEuxZnMoO6 particle surface or subsurface and will dominate the emission of Sr2−xEuxZnMoO6 phosphors when the synthesizing temperature is 1200 °C [27].…”

“…The charge-compensating oxygen vacancies surrounding the Eu 3+ ions will lead to the deviation from the point symmetry and relaxation of electric dipole transitions selection rules, with the appearance of the 5 D0-7 F2 transition lines in the spectra [27]. Additionally, the Eu 3+ luminescent centers contributing to the 5 D0-7 F2 transition line are probably located at the Sr2−xEuxZnMoO6 particle surface or subsurface and will dominate the emission of Sr2−xEuxZnMoO6 phosphors when the synthesizing temperature is 1200 °C [27]. If Eu 3+ ions occupy a non-centrosymmetric lattice site, both electric and magnetic transitions are possible, and the non-symmetric site occupancy will be a dominant reason for causing the emission of 5 D0-7 F2 (612 nm) transition [28].…”

Boosting the photovoltaic performance of Zn2SnO4‐based dye‐sensitized solar cells by Si doping into Zn2SnO4

“…15 Furthermore, Das et al reported a facile approach to synthesize Zn 2 SnO 4 nanoparticles by a temperature-dependent solid-state reaction. 18 The effect of Bi doping on visible-light absorption and photoluminescence properties of Zn 2 SnO 4 were also studied by Liu et al 19 Recently, room-temperature ferromagnetism was observed in Mn-doped Zn 2 SnO 4 nanowires, which were synthesized by chemical vapor transport in a horizontal tube furnace. Wang et al synthesized pure and Dydoped Zn 2 SnO 4 hollow spheres using the coprecipitation method and showed that their photoluminescence and photocatalytic properties can be improved.…”

“…17 Dimitrievska et al synthesized Eu-doped Zn 2 SnO 4 nanoparticles through solid-state reaction method and characterized their optical properties. 18 The effect of Bi doping on visible-light absorption and photoluminescence properties of Zn 2 SnO 4 were also studied by Liu et al 19 Recently, room-temperature ferromagnetism was observed in Mn-doped Zn 2 SnO 4 nanowires, which were synthesized by chemical vapor transport in a horizontal tube furnace. 20 The influence of Co doping on optical and magnetic properties of Zn 2 SnO 4 nanostructures prepared by simple coprecipitation technique was also investigated by Sumithra et al 21 In this work, Zn 2 SnO 4 nanoparticles are doped with silicon to improve their electrical and optical properties.…”