Etching of p- and n-type doped monocrystalline diamond using an ECR oxygen plasma source

Bernard, M.; Deneuville, A.; Lagarde, T.; Treboux, E.; Pelletier, Jacques; Muret, Pierre; Casanova, N.; Gheeraert, Etienne

doi:10.1016/s0925-9635(01)00563-5

Cited by 13 publications

(6 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A thin layer of nickel (65 nm) has then been deposited and patterned using a standard electron-gun evaporator and lift-off technique. This Ni layer acts as a mask for the plasma etching of the diamond structures subsequently done using Electron Cyclotron Resonance oxygen plasma [11] and a −27 V dc bias for ≈ 8 min. This leads to an etching rate of ≈ 40 nm/min.…”

Section: Methodsmentioning

confidence: 99%

Nanostructures made from superconducting boron-doped diamond

et al. 2010

View full text Add to dashboard Cite

We report on the transport properties of nanostructures made from boron-doped superconducting diamond. Starting from nanocrystalline superconducting boron-doped diamond thin films, grown by chemical vapour deposition, we pattern by electron-beam lithography devices with dimensions in the nanometer range. We show that even for such small devices, the superconducting properties of the material are well preserved: for wires of width less than 100 nm, we measure critical temperatures in the kelvin range and critical fields in the tesla range.

show abstract

Section: Methodsmentioning

confidence: 99%

Nanostructures made from superconducting boron-doped diamond

et al. 2010

View full text Add to dashboard Cite

show abstract

“…Some of these "as-grown" samples have been either polished by "scaife" polishing or etched by pure oxygen ECR plasma under optimised conditions [15] during 1 hour, an operation which removed from 3 to 4 µm of the diamond layer. The detailed description of the ECR equipment has been already done elsewhere [19,20]. After growth, the surface of one of the samples has been bevelled by mechanical polishing with an angle of 5 degrees.…”

Section: Methodsmentioning

confidence: 99%

Defect analysis and excitons diffusion in undoped homoepitaxial diamond films after polishing and oxygen plasma etching

Volpe

Muret

Omnès

et al. 2009

Diamond and Related Materials

View full text Add to dashboard Cite

Several 65 µm thick epitaxial diamond films prepared on (100) Ib substrates by high power, pulsed microwave plasma assisted chemical vapour deposition (HP-PMPCVD) are studied as a function of surface treatments by cathodoluminescence (CL) and photoluminescence (PL) spectroscopies. They are either as-grown, or polished, or etched by a microwave oxygen plasma, or after applying subsequently the two last processes. In CL spectra, bands due to defects occur at 2.3 eV, 3.07 eV, 3.6 eV and 4.7 eV, the last one being specific of polished surfaces, with nearly no contrast in the luminescence image, contrary to other CL images. A fundamental result consists in demonstrating that the defects induced by polishing can be removed by oxygen plasma etching. Additionally, in order to assess how luminescence spectra originate from a peculiar depth or not, a bevelled sample is studied. PL spectra are acquired on the sample side while CL spectra are measured at several points on the bevel top side till to the Ib substrate. Comparison of the two sets of result show that the H3 signal originates from the Ib substrate even if it is present in the CL spectra of the film. An analysis of the change in the intensity of the TO free exciton line, defect bands and H3 signal, along decreasing photon energies, as a function of the thickness of the remaining HP-PMPCVD film, is performed with the help of a model taking the diffusion of the unrecombined excitonic pairs and the re-excited photoluminescence into account. CL images recorded at specific wavelengths, which do not show inverted contrast, are also assessed. From these data, the exciton diffusion length is evaluated to 11 µm in the major part of the epitaxial layer except for the first 20 µm close to the Ib substrate where it decreases down to 2 µm. This study sheds light on the interpretation of luminescence spectra excited by an electron beam in undoped diamond layers. Defects bands due to damages induced by polishing and etching processes are also documented.

show abstract

“…The boron-doped film has been deposited on an E6 CVD (100) To study the buried part of the epilayer, a 500 nm deep ECR (microwave electron cyclotron resonance plasma of oxygen) etching has been performed on half of the sample surface. A detailed description of the ECR equipment has been already given elsewhere [5,6]. The layer was etched at room temperature for 8 min under a RF self-bias voltage of 27.5 V, a microwave power of 1600 W, and an oxygen pressure of 2.35 mTorr.…”

Section: Methodsmentioning

confidence: 99%