Nanostructures made from superconducting boron-doped diamond

Mandal, Soumen; Naud, Cécile; Williams, Oliver A.; Bustarret, Étienne; Omnès, Franck; Rodière, Pierre; Meunier, Tristan; Saminadayar, Laurent; Bäuerle, Christopher

doi:10.1088/0957-4484/21/19/195303

Cited by 36 publications

(24 citation statements)

References 16 publications

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“…At higher magnetic fields, the superconducting transition is shifted to lower input powers and to lower temperatures and a residual resistance appears which can be associated to the increase of quasiparticles in the superconductor. We obtained a superconducting transition temperature of approximately 2.5 K at zero magnetic field in agreement with measurements on non-suspended diamond samples 27,30,31 . We now turn to the mechanical properties of the diamond nano-mechanical resonator.…”

Section: Measurementssupporting

confidence: 86%

Superconducting nano-mechanical diamond resonators

Bautze

Mandal

Williams

et al. 2014

Carbon

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In this work we present the fabrication and characterization of superconducting nano-mechanical resonators made from nanocrystalline boron doped diamond (BDD). The oscillators can be driven and read out in their superconducting state and show quality factors as high as 40,000 at a resonance frequency of around 10 MHz. Mechanical damping is studied for magnetic fields up to 3 T where the resonators still show superconducting properties. Due to their simple fabrication procedure, the devices can easily be coupled to other superconducting circuits and their performance is comparable with state-of-the-art technology.

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Section: Measurementssupporting

confidence: 86%

Superconducting nano-mechanical diamond resonators

Bautze

Mandal

Williams

et al. 2014

Carbon

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“…The resistivity decreases as temperature goes down, and reaches, at around 40 K, a low residual value of $0:005-0:009 m, which corresponds to a conductivity about 10 3 times larger than the Mott minimum metallic conductivity $e 2 =@a (the distance between atoms in diamond a $ 1:5 # A). The residual resistivity is much lower than that of often reported resistivity values of microcrystalline and/or nanocrystalline diamond films [22][23][24][25] synthesized with microwave plasma-assisted chemical vapor deposition (MPCVD) method, suggesting good intergrain contacts. Our HDD thick layers were directly deposited on top of the insulating UDD ''substrates,'' and thus no seeding with undoped nanodiamonds was employed to promote the diamond nucleation as in MPCVD.…”

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confidence: 66%

Metal–Bosonic Insulator–Superconductor Transition in Boron-Doped Granular Diamond

et al. 2013

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In a variety of superconductors, mostly in two-dimensional (2D) and one-dimensional (1D) systems, the resistive superconducting transition RðTÞ demonstrates in many cases an anomalous narrow RðTÞ peak just preceding the onset of the superconducting state R ¼ 0 at T c . The amplitude of this RðTÞ peak in 1D and 2D systems ranges from a few up to several hundred percent. In three-dimensional (3D) systems, however, the RðTÞ peak close to T c is rarely observed, and it reaches only a few percent in amplitude. Here we report on the observation of a giant ($ 1600%) and very narrow ( $ 1 K) resistance peak preceding the onset of superconductivity in heavily boron-doped diamond. This anomalous RðTÞ peak in a 3D system is interpreted in the framework of an empirical model based on the metal-bosonic insulator-superconductor transitions induced by a granularity-correlated disorder in heavily doped diamond. DOI: 10.1103/PhysRevLett.110.077001 PACS numbers: 74.70.Wz, 71.30.+h, 74.25.Àq, 74.62.En Since the 1950s [1], a puzzling anomalous increase of resistance, RðTÞ, preceding the superconducting transition, has been reported in some superconducting systems situated not yet in the vicinity of the insulator-metal transition (IMT) with relatively low residual resistance. At first, the increase was only observed at the level of a few percent. Later on, in thin films [2][3][4] and 1D whiskers and wires [5,6], similar effects were also found, with a considerably higher amplitude of the RðTÞ anomaly: 16% and 160%. With the discovery of quasi-2D cuprates, the RðTÞ peak around T c was also reported for these lowdimensional materials, such as NdCeCuO [7], BiSrCaCuO [8,9], and LaSrCuO [10,11], with the peak amplitude reaching 400%-700%. In 2D and 1D microstructures [6,[12][13][14][15][16], made from conventional superconducting materials (mostly Al), a narrow resistance peak close to T c was also observed, with the peak amplitude reaching the 400% level.Different models were used to explain the nature of the anomalous RðTÞ peak: normal-metal-superconductor boundaries, disorder and fluctuations, vortex dynamics and Josephson coupling in layered systems, charge imbalance, and competition between superconducting and insulating states in 2D systems [1,2,4,6,8,[12][13][14]16,17].All these observations of the RðTÞ peak around T c and the corresponding models and theories, formulated to explain the corresponding experimental data, are very much linked to the reduced dimensionality of the investigated systems: 2D or/and 1D. We have found reports on the RðTÞ peak for 3D-like metallic Cu-Zr glasses only in a couple of previous publications [17,18] with a quite small RðTÞ peak amplitude-less than 3%. We present here our novel observations of the giant RðTÞ peak in 3D boron-doped granular diamond, which are very different from previously reported data in the following important aspects.First, the effect has a giant amplitude: the peak resistance value exceeds the residual resistance close to T c by 550%-1600%, which is a much higher value tha...

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“…Due to the preparation being fully compatible with state-of-the-art semiconductor processing thin-film Ge:Ga could easily be patterned into custom-designed devices where combined semi-and superconducting circuits may be integrated close-by [8]. Besides the small critical temperatures, first achievements concerning BDD have been reported and may stimulate further progress [44].…”

Section: Resultsmentioning

confidence: 99%

The impact of heavy Ga doping on superconductivity in germanium

Skrotzki

Herrmannsdörfer

Heera

et al. 2011

Low Temperature Physics

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We report new experimental results on how superconductivity in gallium-doped germanium (Ge:Ga) is influenced by hole concentration and microstructure. Ion implantation and subsequent flash-lamp annealing at various temperatures have been utilized to prepare highly p-doped thin films consisting of nanocrystalline and epitaxially grown sublayers with Ga-peak concentrations of up to 8 at.%. Successive structural investigations were carried out by means of Rutherford-backscattering spectrometry in combination with ion channelling, secondaryion-mass spectrometry, and high-resolution cross-sectional transmission electron microscopy. Hole densities of 1.8·10 20 to 5.3·10 20 cm -3 (0.4 to 1.2 at.%) were estimated via Hall-effect measurements revealing that only a fraction of the incorporated gallium has been activated electrically to generate free charge carriers. The coincidence of a sufficiently high hole and Ga concentration is required for the formation of a superconducting condensate. Our data reflect a critical hole concentration of around 0.4 at.%. Higher concentrations lead to an increase of T c from 0.24 to 0.43 K as characterized by electrical-transport measurements. A short mean-free path indicates superconductivity in the dirty limit. In addition, small critical-current densities of max. 20 kA/m 2 point to a large impact of the microstructure.PACS: 74.10.+v Occurrence, potential candidates; 74.78.-w Superconducting films and low-dimensional structures.

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Nanostructures made from superconducting boron-doped diamond

Cited by 36 publications

References 16 publications

Superconducting nano-mechanical diamond resonators

Superconducting nano-mechanical diamond resonators

Metal–Bosonic Insulator–Superconductor Transition in Boron-Doped Granular Diamond

The impact of heavy Ga doping on superconductivity in germanium

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