Etching of Nb2O5 Thin Films by NbCl5

Knapas, Kjell; Rahtu, Antti; Ritala, Mikko

doi:10.1002/cvde.200906795

Cited by 27 publications

(10 citation statements)

References 33 publications

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“…The initial process developed in this work, was the area-selective MoCl4O + (O3 + H2O) process. This was the first reported area-selective process for MoOx and usage of MoCl4O as an ALD-precursor, and moreover one of only a few reported oxychlorides used to deposit oxides [239,240]. Bergum et al had previously described usage of WCl4O in combination with H2O to deposit WO3, but the process seemed to stop after a few cycles according to their QCM data [238].…”

Section: Discussionmentioning

confidence: 96%

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Area-selective atomic layer deposition of molybdenum oxide

Kvalvik

Borgersen

Hansen

et al. 2020

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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have supervised the work.Per-Anders and Ola, there is no way this thesis could be finished without you. Per-Anders, you are truly an excited person and I have never met anyone so passionate about his or her own field as you. That passion is contagious, and so is your cheerfulness and joy to share your knowledge. Ola, you are the most understanding and supporting person on the planet. Your response time is amazingly fast and you take all stupid and not so stupid questions seriously. You see every find as an opportunity, and that is great. When I saw an ALD system not behaving, only depositing on certain surfaces, you saw the chance to explore an area-selective system. I am so deeply grateful to both of you.I am also very grateful to Øystein Evandt and his insight on Design of Experiments (DoE), that he is always more than willing to share. Moreover, a special thank you goes to Dr. David Wragg for his aid with Pawley refinements and to my co-author on Paper I, Jon Borgersen. Making the world's second smallest university logo would not have been possible without you. Augustinas Galeckas, co-author on Paper III, has my sincere gratitude for a swift response and aiding with various optical measurements.Thank you all.During my many years at NAFUMA I have had a lot of nice colleagues and even shared office with many of you. I have probably been of the more talkative kind of office mate, but I think most of you managed ok. Thanks for making work-life good. Special thanks go to Kristian x2, Leva, Michael and Katja, for particularly good company.The largest thank you goes to the people surrounding me. Luckily, that is a lot of people and I am so blessed to have each and every one of you. I am looking forward to times where we can all gather up for large family dinners again, although fitting 25+ people in our house is kind-of tight. Special thanks go to my parents for their endless support and babysitting. You have thought me persistence, perfectionism and hard work, and always taken for granted that I would be able to reach my goals.Thanks for having that belief, also at times where I lost it myself. A huge thank you goes to my in-laws for cheering and babysitting, including my always calm, positive and caring sister-in-law. I also want to thank the engineers in my family, particularly my grandfather, for inspiring me towards a scientific career. Kaja also deserves a huge thank you, simply for existing. Thanks for being my best friend since we started schooland staying with me until now when I finally finish my formal education.Many times during this process, I have been told that pursuing a PhD whilst having three kids, is something you just don't do. It pisses of my inner feminist, but they do have a point, combining sleepless iv nights, dreadful pregnancies and having to make it home before the kindergarten closes whilst pursuing a phd, is not always a primrose path. My favorite counterargument for this is that children give you the best possible mental timeouts from your work. And trust me, in this process, you need m...

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Section: Discussionmentioning

confidence: 96%

“…This may be due to the same substrate selectivity as seen for MoCl4O, and its growth should hence be revisited. In-situ generated NbOCl3 [239] and TaOCl3 [240] have been suggested as precursors for deposition of their binary oxides in combination with H2O. These oxychlorides have however, not been used directly.…”

Section: Mocl4o As An Ald-precursormentioning

confidence: 99%

Area-selective atomic layer deposition of molybdenum oxide

Kvalvik

Borgersen

Hansen

et al. 2020

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…The application of WCl 6 + H 2 O as a precursor combination was not considered practical due to likely formation of volatile WOCl 4 , in a similar manner to that reported for the application of NbCl 5 with H 2 O. 21 In the same work by Knapas et al, however, they showed that NbOCl 3 can be applied to the formation of lms of Nb 2 O 5 . Previous work on deposition of WO 3 lms by WF 6 (ref.…”

Section: Wo 3 Depositionmentioning

confidence: 88%

Thin film fabrication and characterization of proton conducting lanthanum tungstate

et al. 2014

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Thin films of the proton conducting lanthanum tungstate phase, La 28Àx W 4+x O 54+d v 2Àd , were fabricated by atomic layer deposition (ALD) and characterized by impedance spectroscopy. The films were prepared by combining the processes of deposition of La 2 O 3 and WO 3 using [La(thd) 3 + O 3 ] and [( t BuN) 2 (Me 2 N) 2 W(VI) + H 2 O]. Deposition of WO 3 by the above mentioned precursor combinations is investigated in the range of 250-375 C proving ALD growth at temperatures 275-325 C. WOCl 4 + H 2 O was evaluated for WO 3 deposition. The observed surface sensitive growth resulted in limited film growth on selected substrates.The process of lanthanum tungstate deposition was optimized with respect to control of stoichiometry and 0.9 and 1.2 mm thick films were deposited on MgO and Pd for cross-plane and in-plane impedance spectroscopy measurements, respectively. Due to short-circuiting of films on Pd after heat treatment, an alternative deposition procedure was devised which reduced short-circuiting significantly. The films show primarily ionic conductivity under wet conditions. Oxide ions are the dominating conductors above 650 C, while protons become more dominant at lower temperatures. There is a significant contribution from n-type electronic conductivity in highly reducing atmospheres.

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“…Nb 2 O 5 is a high-permittivity material with potential thin film applications in for instance DRAM devices (dynamic random access memory), optics, and gas sensors . Original growth experiments to deposit Nb 2 O 5 using the NbCl 5 −H 2 O ALD process failed due to etching of Nb 2 O 5 by NbCl 5 .…”

Section: Introductionmentioning

confidence: 99%

“…Original growth experiments to deposit Nb 2 O 5 using the NbCl 5 −H 2 O ALD process failed due to etching of Nb 2 O 5 by NbCl 5 . Recently we demonstrated that NbCl 5 and H 2 O may still be applicable for depositing Nb 2 O 5 by ALD if some Nb 2 O 5 is allowed to react with NbCl 5 before the substrates . In this approach the niobium containing species giving rise to growth of Nb 2 O 5 is NbOCl 3 .…”

Section: Introductionmentioning

confidence: 99%

Reaction Mechanism Studies on Atomic Layer Deposition of Nb₂O₅ from Nb(OEt)₅ and Water

2009

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The reaction mechanism in the atomic layer deposition of Nb(2)O(5) from Nb(OEt)(5) and deuterated water was studied in situ with a quadrupole mass spectrometer (QMS) and a quartz crystal microbalance (QCM). The responses of these in situ measurement techniques to the characteristics of the ALD processes were thoroughly clarified and the process parameters carefully optimized. Also the effect of the reaction temperature on the extent of decomposition reactions of Nb(OEt)(5) interfering with the ALD process was investigated. Decomposition did occur at 400 degrees C but not at temperatures of 350 degrees C and below. Also the reaction mechanism was studied as a function of reaction temperature and found to be about the same until decomposition of the precursor started. Deuterated ethanol was found to be the most important gaseous byproduct of the ALD process but also some diethyl ether apparently formed. About one of the five ethoxide ligands of Nb(OEt)(5) was released during the Nb(OEt)(5) pulse and the rest during the D(2)O pulse. Finally separate experiments were performed to study the adsorption of ethanol as well as 2-propanol on the surface of Nb(2)O(5). Ethanol was found to adsorb. It could also be stated that water can replace the adsorbed ethanol. On the other hand 2-propanol apparently did not adsorb on the surface of Nb(2)O(5).

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Etching of Nb₂O₅ Thin Films by NbCl₅

Cited by 27 publications

References 33 publications

Area-selective atomic layer deposition of molybdenum oxide

Area-selective atomic layer deposition of molybdenum oxide

Thin film fabrication and characterization of proton conducting lanthanum tungstate

Reaction Mechanism Studies on Atomic Layer Deposition of Nb₂O₅ from Nb(OEt)₅ and Water

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Etching of Nb2O5 Thin Films by NbCl5

Cited by 27 publications

References 33 publications

Area-selective atomic layer deposition of molybdenum oxide

Area-selective atomic layer deposition of molybdenum oxide

Thin film fabrication and characterization of proton conducting lanthanum tungstate

Reaction Mechanism Studies on Atomic Layer Deposition of Nb2O5 from Nb(OEt)5 and Water

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Product

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Etching of Nb₂O₅ Thin Films by NbCl₅

Reaction Mechanism Studies on Atomic Layer Deposition of Nb₂O₅ from Nb(OEt)₅ and Water