Etching of Cadmium Telluride

Gaugash, P.; Milnes, A. G.

doi:10.1149/1.2127534

Cited by 45 publications

(15 citation statements)

References 1 publication

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“…Etching of CdTe with some reagents results in a pronounced tellurium enrichment in the surface layer owing to the formation of insoluble Te compounds [4]. During storage of etched samples in air, the thickness of the oxide layer increases, and a mixture of Te and TeO 2 is formed in the surface layer.…”

Section: Introductionmentioning

confidence: 99%

Etching Behavior of Undoped and Doped CdTe in Aqueous H2O2-HBr-Ethylene Glycol Mixtures

et al. 2005

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The mechanism and kinetics of undoped and doped CdTe dissolution in aqueous H 2 O 2 -HBr-ethylene glycol mixtures are investigated. The results are used to construct the dissolution rate-etchant composition diagrams for the materials studied and to identify the rate-limiting step of the dissolution process. Dissolution in polishing etchants is shown to be diffusion-limited. Doping has a significant effect on the dissolution behavior of CdTe.

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Section: Introductionmentioning

confidence: 99%

Etching Behavior of Undoped and Doped CdTe in Aqueous H2O2-HBr-Ethylene Glycol Mixtures

et al. 2005

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“…The samples (dissolution procedure) were named as A/B, where A = the number of the thin film (1)(2)(3)(4), and B = the number of the diluted nitric acid dissolved layer (1)(2)(3)(4)(5). For example, the sample marked as "3/4" means the fourth HNO 3 dissolution of the thin film number 3.…”

Section: Methodsmentioning

confidence: 99%

“…The etching of CdTe single crystals and thin films with various etchants has been studied widely [3][4][5][6][7][8]. Tellurium-rich layers were measured by Auger electron spectroscopy (AES) [3,7,8] and X-ray photoelectron spectroscopy (XPS) [5] while using the H 3 PO 4 /HNO 3 solution as an etchant. The determination of the composition of the Cd and Te compounds formed by the etching process is difficult in the first atomic layers of the thin film.…”

Section: Introductionmentioning

confidence: 99%

Study of CdTe/CdS-thin films by isotope dilution, neutron activation analysis, inductively coupled plasma mass spectrometry and secondary ion mass spectrometry

Rosenberg

Zilliacus

Lakomaa

et al. 1996

Fresenius' Journal of Analytical Chemistry

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Thin polycrystalline CdTe films can be used as materials for solar cells. The CdTe surface is etched with H 3 PO 4 /HNO 3 solution to remove soluble Cd compounds and to leave insoluble Te compounds on the surface and thus creating a layer between CdTe and the electrode material. Different analytical methods have been used for studying the effect of the etching procedure relating to the electrode deposition on the CdTe surface. The penetration of phosphorus from the etchant without an intentional CdTe doping may be beneficial for the thin film structure. Phosphorus has been determined by isotope dilution, and cadmium and tellurium by instrumental neutron activation analysis and inductively coupled plasma mass spectrometry in the dissolved samples. All the samples have also been analysed by secondary ion mass spectrometry. It was shown that P penetrates the film. The first 40 nm contains P in a P/Cd atomic ratio of about 0.5. In the next layers the ratio is about 0.1. The etchant leaves a thin Te-enriched layer on the surface of the film. This was detected from the SIMS profile, but not from the diluted nitric acid dissolved fractions because of the low Te solubility.

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“…Deviation from stoichiometry was measured by the direct physical-chemical ''extraction'' method [15]. Dislocation density was determined by selective etching [16]. 5664 5728 Heat conductivity (Wt m À 1 K À 1 ) 3 1.5 Heat expansion coefficient (K À 1 ) 5 Â 10 À 4 1.5 Â 10 À 5 Dynamic viscosity (kg m À 1 s À 1 ) 0.0025 -Specific heat at 1092 1C (kJ kg À 1 K À 1 ) 187 160…”

Section: Crystal Characterizationmentioning

confidence: 99%

Simulation and crystal growth of CdTe by axial vibration control technique in Bridgman configuration

Avetissov

Sukhanova

Khomyakov

et al. 2011

Journal of Crystal Growth

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Etching of Cadmium Telluride

Abstract: not Available.

Cited by 45 publications

References 1 publication

Etching Behavior of Undoped and Doped CdTe in Aqueous H2O2-HBr-Ethylene Glycol Mixtures

Etching Behavior of Undoped and Doped CdTe in Aqueous H2O2-HBr-Ethylene Glycol Mixtures

Study of CdTe/CdS-thin films by isotope dilution, neutron activation analysis, inductively coupled plasma mass spectrometry and secondary ion mass spectrometry

Simulation and crystal growth of CdTe by axial vibration control technique in Bridgman configuration

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