Etching Efficiency of Polymethacrylates for Monochromatic Low Energy Ion Beams

Seki, Shu; Kawachi, Satoshi; Tagawa, Seiichi; Egami, Akihiko; Kurihara, Kazuaki; Nakamura, Moritaka; Itoh, Hiroshi

doi:10.2494/photopolymer.18.255

Cited by 4 publications

(5 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…2C). This is in agreement with PMAs chain scissionning mechanisms proposed in the literature [10,18], either by direct main chain scission or by disproportionation after loss of a complete ester side-group, leading to the formation of end-chain CfC bonds and a propagating radical (Fig. 5A(1)).…”

Section: Resultssupporting

confidence: 90%

“…Similar peaks are also observed with samples of the bulk of the etched PR but with relatively lower intensities. As with the degradation of other PMAs [10,11] the lactone side-group is most probably cleaved away together with the ester, since then the most stable radicals are formed (reaction A in Fig. 3).…”

Section: Resultsmentioning

confidence: 97%

“…PR materials used in 193-nm DUV photolithography are polymethacrylates (PMA) with C-rich alicyclic side-groups to [9]. The degradation of PMA polymers is usually dominated by chain scissionning [10], although cross-linking is reported with long pendant side-groups [11]. Few reports deal with 193-nm DUV PR degradation by actual etch processes used to pattern dielectric materials.…”

Section: Introductionmentioning

confidence: 98%

See 2 more Smart Citations

Chemical and structural modifications in a 193-nm photoresist after low-k dry etch

Kesters

Claes

et al. 2008

Thin Solid Films

View full text Add to dashboard Cite

Section: Resultssupporting

confidence: 90%

Section: Resultsmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 98%

See 1 more Smart Citation

Chemical and structural modifications in a 193-nm photoresist after low-k dry etch

Kesters

Claes

et al. 2008

Thin Solid Films

View full text Add to dashboard Cite

“…5). This is in agreement with PMAs chain scissionning mechanisms proposed in the literature (15,17), either by direct main chain scission or by disproportionation after loss of a complete ester side-group, leading to the formation of end-chain C=C bonds and a propagating radical (Fig. 5_left(1)).…”

Section: Resultssupporting

confidence: 91%

All-Wet Strip Approaches for Post-Etch Photoresist Layers After Low-K Patterning

Claes¹,

Le²,

Kesters³

et al. 2007

ECS Trans.

View full text Add to dashboard Cite

Wet-only removal of post-etch (meth-)acrylate based photoresist on porous low-k dielectrics applied in either resist or metal hard mask based patterning is investigated. Characterization of photoresist degradation by etch is applied to support the selection of wet cleaning chemistries and/or cleaning processes. FTIR and 1H-NMR analysis results indicate a common degradation mechanism for both patterning schemes with formation of double carbon bonds in a cross-linked crust that is insoluble in organic solvents. Even though a common degradation method is observed, resist cleanability in metal hard mask applications is by far more difficult due to a higher degree of resist cross-linking. Cleaning approaches by dissolution in solvents in combination with physical forces, for both patterning schemes, are discussed in detail.

show abstract

“…Being free from the "focusing" of particles into the small spatial area, the authors were approaching to the concept that a particle produces a corresponding 1-dimesional nanostructures [2][3][4][5][6].…”

mentioning

confidence: 99%