Chemical and structural modifications in a 193-nm photoresist after low-k dry etch

Kesters, Els; Claes, M.; Le, Quoc Toan; Lux, Marcel; Franquet, Alexis; Vereecke, Guy; Mertens, P.; Frank, Martin M.; Carleer, Robert; Adriaensens, Peter; Biebuyk, J. J.; Bebelman, Sabine

doi:10.1016/j.tsf.2008.01.018

Cited by 21 publications

(17 citation statements)

References 20 publications

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“…It was worth noting that the absorption at 196 nm was the blue shift band of the typical phenyl moiety at 205 nm. Because the blue shift corresponded to the H‐aggregation of the chromophores,27, 28 it was suggested that anthracenyl group in LB films occurred H‐aggregation, and then the photodimerization. The photodimerization had be proved by the fact that the LB films irradiated at 248 nm for 7 min only can be developed by toluene, resulting negative‐tone pattern.…”

Section: Resultsmentioning

confidence: 99%

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Controllable photopatterning and photochemical properties of novel copolymer containing dianthracene langmuir–blodgett films

Tang

et al. 2011

J Polym Sci B Polym Phys

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A new series of copolymer poly(N-hexadecylmeth acrylamide-co-bis(anthracen-9-ylmethyl) 2-allylmalonate) [poly(HDMA-co-DAnMAMA)]s containing swallow-tailed double anthracenyl groups and long alkyl group are designed and synthesized. The main route of the photochemical reaction of the p(HDMA-DAnMAMA)copolymer Langmuir-Blodgett (LB) films is dimerization reaction between the anthracenyl groups under the irradiation of both 365 and 248 nm for limiting irradiation time, resulting to a fine negative-tone pattern. On the other hand, the anthracenyl groups act just as photodecomposition group under 248 nm for longer irradiation time, resulting to a fine positive-tone pattern. Consequently, positive-tone and negative-tone pattern are obtained by choosing not only a suit-Additional Supporting Information may be found in the online version of this article.

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Section: Resultsmentioning

confidence: 99%

“…The appearance of the new weak band (from 525 to 575 nm) revealed the process of the photodimerization in the cop20 LB films. We thought that there was the competition of the photodegredation and photodimerization reaction under the two different wavelength 28…”

Section: Resultsmentioning

confidence: 99%

Controllable photopatterning and photochemical properties of novel copolymer containing dianthracene langmuir–blodgett films

Tang

et al. 2011

J Polym Sci B Polym Phys

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“…Indirect (off-wafer) analysis.-A procedure for separation of the top modified layer/crust from the underlying bulk resist layer has been developed similar to those used by Fujimura et al 19 and Kesters et al 24 This procedure has been used for PR implanted with different implant energy (1-40 keV) and dose (1 Â 10 14 -1 Â 10 16 cm À2 ). 2-3 blanket PR wafers per implant conditions have been dipped in dimethyl sulfoxide (DMSO) at room temperature ( Fig.…”

Section: Methodsmentioning

confidence: 99%

Degradation of 248 nm Deep UV Photoresist by Ion Implantation

Tsvetanova

Vos

Vereecke

et al. 2011

J. Electrochem. Soc.

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Wet processes are gaining a renewed interest for removal of high dose ion implanted photoresist (II-PR) in front-end-of-line semiconductor manufacturing because of their excellent selectivity towards the wafer substrate and gate materials. The selection of wet chemistries is supported by an insight into the resist degradation by ion implantation. In this work, different analytical techniques have been applied for in-depth characterization of the chemical changes in 248 nm DUV PR after arsenic implantation. A radical mechanism of resist degradation is proposed involving cross-linking and chain scission reactions. The cross-linking of the resist is dominant especially for high doses and energies. It leads to significant depletion of hydrogen and formation of carbon macroradicals that recombine to form C-C cross-linked crust. Moreover, formation of ab-unsaturated ketonic and/or quinonoid structures by cross-linking reactions is suggested. In addition, the dopant species may provide rigid points in the PR matrix by chemical bonding with the resist. For higher doses and energies further dehydrogenation occurs, which leads to formation of triple bonds in the crust. Different p-conjugated structures are formed in the crust by cross-linking and dehydrogenation reactions. No presence of amorphous carbon in the crust is revealed.In the processing of integrated circuits, the source and drain of a p-type and n-type metal-oxide-semiconductor field-effect transistor (MOSFET) are defined by implantation of donor and acceptor ions respectively. During the ion implantation, a photoresist is used as a masking material. The removal of high dose ( $ >1 Â 10 15 at. cm À2 ) and low energy ion implanted photoresist (II-PR) after implantation of ultra shallow extension and halo regions is considered one of the most challenging front-end-of-line (FEOL) processing steps for 32 nm and beyond technology nodes of logic devices. This is due to the difficulties of removing the modified layer (crust) formed on top and the sidewalls of the PR during the ion implantation in combination with the compatibility towards shallow implanted substrates, novel metal gate and high k-materials. Commonly used resist strip processes such as fluorine-based dry plasma ash and hot sulfuric/peroxide mixtures induce unacceptable levels of oxidation and material loss. 1-4 Alternative cleans are being developed for removal of II-PR. [5][6][7][8][9][10][11][12][13][14][15] In order to design approaches for selective stripping of II-PR a more profound insight into the resist degradation induced by ion implantation is needed.The degradation of photoresist by ion bombardment is a complex phenomenon, which is discussed in few reports. 15-22 Some of them seem even contradictory or difficult to compare, mainly because the results are obtained on different resist systems (resist chemical structure) and/or implantation conditions such as ion species, ion energy, ion dose etc. The chemical modifications in high energy ( $ > 100 keV) and high dose implanted novolak based resis...

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“…The PR under study was a commercial DUV (193 nm) poly methyl acrylate/methacrylate-based resin, with lactone and adamantane groups in the side chains to enhance certain chemical and physical properties of the PR film (7). Typically, a photoresist (~150 nm)/BARC (~33 nm) layer was coated onto a single damascene structure consisting of TiN hard mask/low-k dielectric/SiCN/Si stack (90 nm ½ pitch).…”

Section: Methodsmentioning

confidence: 99%

Removal of Photoresist and BARC in Cu BEOL using an All-wet Process

Le¹,

Klipp

Lux³

et al. 2009

ECS Trans.

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Wet removal of post-etch photoresist (PR) and bottom anti-reflective coating (BARC) was studied using "multi functional" cleaning solutions based on BASFs tool box. For blanket wafer, Fourier-transform infrared (FTIR) data showed that both PR and BARC layers were completely removed at a megasonic power of 10 W for 2 min. For patterned structure, the plasma used for opening of the BARC layer and metal hard mask resulted in the formation of fluorine- and titanium-containing species in the PR crust. Cross-sectional secondary electron microscopy (SEM) and X-ray photoemission spectroscopy (XPS) data indicated that complete removal of post-etch PR can be achieved under experimental conditions typical for single wafer processing. Subsequent patterning of porous low-k layer showed good low-k profile. Wet processes using solvent-based chemistry followed by a bake at 350 {degree sign}C for 1 min at low pressure was found to have no detrimental impact on k-value degradation.

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Chemical and structural modifications in a 193-nm photoresist after low-k dry etch

Cited by 21 publications

References 20 publications

Controllable photopatterning and photochemical properties of novel copolymer containing dianthracene langmuir–blodgett films

Controllable photopatterning and photochemical properties of novel copolymer containing dianthracene langmuir–blodgett films

Degradation of 248 nm Deep UV Photoresist by Ion Implantation

Removal of Photoresist and BARC in Cu BEOL using an All-wet Process

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