Etching characteristics and mechanism of ZnO thin films in inductively coupled HBr/Ar plasma

Ham, Yong-Hyun; Efremov, Alexander; Yun, Sun Jin; Kim, Jun Kwan; Min, Nam Ki; Kwon, Kwang‐Ho

doi:10.1016/j.tsf.2009.02.008

Cited by 17 publications

(7 citation statements)

References 18 publications

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“…11,12) Also, in our previous work, we investigated the etching characteristics and mechanisms of both ZnO and Ga-doped ZnO (GZO) thin films with the HBr-based gas chemistries. 13,14) We found that the ZnO etch rate is comparable to that obtained using chlorine-based chemistries, while the etch process occurs in the reaction-rate-limited etch regime with Br atoms acting as the main chemically active species. As for the Inand Ga-doped ZnO (IGZO) thin films, there are only few reports on this issue.…”

Section: Introductionmentioning

confidence: 68%

Etching Behavior and Mechanism of In- and Ga-Doped ZnO Thin Films in Inductively Coupled BCl₃/Cl₂/Ar Plasmas

Kwon

Efremov

Kang

et al. 2012

Jpn. J. Appl. Phys.

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The etching characteristics and mechanism of In- and Ga-doped ZnO (IGZO) thin films in BCl3/Cl2/Ar inductively coupled plasma at a fixed gas pressure (6 mTorr) were investigated. It was found that the substitution of Cl2 for BCl3 in the BCl3/Cl2/Ar gas mixture results in the maximum IGZO etching rate in 40% BCl3 + 40% Cl2 + 20% Ar. In both Cl2-rich (20% BCl3 + 60% Cl2 + 20% Ar) and BCl3-rich (60% BCl3 + 20% Cl2 + 20% Ar) plasmas, increases in input power (500–800 W) and bias power (100–250 W) cause the monotonic acceleration of the IGZO etching process. Plasma diagnostics using Langmuir probes and zero-dimensional plasma modeling provided the data on plasma parameters and fluxes of active species. It was concluded that the IGZO etching process is not limited by the ion–surface interaction kinetics as well as involves BCl x radicals.

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Section: Introductionmentioning

confidence: 68%

Etching Behavior and Mechanism of In- and Ga-Doped ZnO Thin Films in Inductively Coupled BCl₃/Cl₂/Ar Plasmas

Kwon

Efremov

Kang

et al. 2012

Jpn. J. Appl. Phys.

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“…The experiments were carried out in a planar reactor under conditions of an inductive RF (13.56 MHz) discharge [8,9,16]. The total flow rate ( = 40 std.…”

Section: Study Of Etching Kinetics and Plasma Diagnosticsmentioning

confidence: 99%

“…Currently, there are a sufficient number of works (for example, [5][6][7][8][9][10][11][12][13][14][15][16]) devoted to studying the regularities of the plasma etching of TiO 2 , In 2 O 3 , SnO 2 , and ZnO in fluorine, chlorine, and bromine-containing gases under the conditions of a reactive ion process (gas pressure < 20 mTorr, ion bombardment energy > 100 eV). The main feature of such processes is the implementation of two mechanisms for the gasification of surface atoms: physical sputtering and chemical reaction.…”

Section: Introductionmentioning

confidence: 99%

Mechanisms of Plasma Etching of Titanium, Indium, Tin, and Zinc Oxides in a Mixture of HBr + Ar

et al. 2021

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The kinetics and mechanisms of reactive ion etching of titanium oxides (TiO 2 ), indium (In 2 O 3 ), tin (SnO 2 ), and zinc (ZnO) in HBr + Ar plasma. It is found that an increase in the fraction of Ar is accompanied by a decrease in the etching rates of all the materials under study, while the absolute values of the rates for any composition of the mixture are correlated to the value of the breaking energy of the oxide bond and/or the volatility of the interaction products. With the combined use of methods of diagnostics and plasma modeling, the stationary concentrations of active particles and the density of their fluxes on the treated surface are determined. The use of these data for the analysis of the kinetics of heterogeneous processes showed that (a) the dominant etching mechanism in the range 0-75% Ar is an ion-stimulated chemical reaction; and (b) the effective probability of the interaction of bromine atoms increases (for TiO 2 ) or decreases (for In 2 O 3 , SnO 2 , and ZnO) with the increasing dilution of HBr with argon. Assumptions are made about the reasons for this dependence.

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“…[5][6][7] In particular, plasma of hydrogen bromide (HBr) integrated with noble gases (e.g., Argon: Ar or Helium: He) has demonstrated higher anisotropy and selectivity for etching of Si-wafer; however, a lower etching rate was reported. [8][9][10][11][12][13] Nevertheless, the etching rate of HBr plasmas can be significantly improved by introducing molecular gases such as chlorine (Cl 2 ) in the plasma, most likely because of the chemically reactive nature of Cl. Alternatively, providing noble gas (e.g., Ar) environment has been postulated to trigger the plasma discharge at considerably low pressures.…”

Section: Introductionmentioning

confidence: 99%

Computational characterization of capacitive coupled HBr/Cl₂/O₂ plasma

Gul

Iqbal

Khan

et al. 2022

Contributions to Plasma Physics

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A self‐consistent two‐dimensional fluid model was used to study HBr/Cl2/O2 plasma discharge. A comprehensive set of 150 reactions comprising different processes (i.e., dissociation, ionization, and excitation) in tandem with 32 plasma species were considered in the computational model. The results revealed that the plasma reactions were dominated by 11 species (i.e., Cl, Cl+, Cl2+, H, H2, HCl, HCl+, Br, Br+, Br2, and HBr+), where the neutral species outnumbered the charged species. The density of charged species in the plasma reactor followed a bell shaped while the neutral species followed a double humped shaped distribution. The increase in plasma O2 concentration resulted in an initial decrease, followed by a gradual increase in the generation of Cl, Br, H, Cl+, and Br+ in the plasma discharge. A lower/higher concentration of oxygen in the plasma stimulated the densities of neutral/charged species, which facilitated the chemical/physical etching pathway. These findings provide new insights into the type of etching species and their optimization in the HBr/Cl2/O2 plasma discharge, with potential applications in the semiconductor industry.

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Etching characteristics and mechanism of ZnO thin films in inductively coupled HBr/Ar plasma

Cited by 17 publications

References 18 publications

Etching Behavior and Mechanism of In- and Ga-Doped ZnO Thin Films in Inductively Coupled BCl₃/Cl₂/Ar Plasmas

Etching Behavior and Mechanism of In- and Ga-Doped ZnO Thin Films in Inductively Coupled BCl₃/Cl₂/Ar Plasmas

Mechanisms of Plasma Etching of Titanium, Indium, Tin, and Zinc Oxides in a Mixture of HBr + Ar

Computational characterization of capacitive coupled HBr/Cl₂/O₂ plasma

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Etching characteristics and mechanism of ZnO thin films in inductively coupled HBr/Ar plasma

Cited by 17 publications

References 18 publications

Etching Behavior and Mechanism of In- and Ga-Doped ZnO Thin Films in Inductively Coupled BCl3/Cl2/Ar Plasmas

Etching Behavior and Mechanism of In- and Ga-Doped ZnO Thin Films in Inductively Coupled BCl3/Cl2/Ar Plasmas

Mechanisms of Plasma Etching of Titanium, Indium, Tin, and Zinc Oxides in a Mixture of HBr + Ar

Computational characterization of capacitive coupled HBr/Cl2/O2 plasma

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Etching Behavior and Mechanism of In- and Ga-Doped ZnO Thin Films in Inductively Coupled BCl₃/Cl₂/Ar Plasmas

Etching Behavior and Mechanism of In- and Ga-Doped ZnO Thin Films in Inductively Coupled BCl₃/Cl₂/Ar Plasmas

Computational characterization of capacitive coupled HBr/Cl₂/O₂ plasma