2008
DOI: 10.1016/j.diamond.2008.01.011
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Etching and micro-optics fabrication in diamond using chlorine-based inductively-coupled plasma

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Cited by 95 publications
(71 citation statements)
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“…The advantage of this method is the simpler and faster processing exploiting quartz as both the handling substrate and mask material. In the next step, the diamond device layer was thinned to o500 nm using reactive ion etching based on an argon-chlorine (Ar/Cl) plasma 31 . This procedure is known to produce very uniform and smooth etches with resulting surface roughness well below 1 nm-rms.…”
Section: Resultsmentioning
confidence: 99%
“…The advantage of this method is the simpler and faster processing exploiting quartz as both the handling substrate and mask material. In the next step, the diamond device layer was thinned to o500 nm using reactive ion etching based on an argon-chlorine (Ar/Cl) plasma 31 . This procedure is known to produce very uniform and smooth etches with resulting surface roughness well below 1 nm-rms.…”
Section: Resultsmentioning
confidence: 99%
“…Therefore, we follow this step with another acid clean with the same conditions as before to remove surface contaminants from the polishing process, and perform another RIE etch again with 30min of Ar/Cl 2 and 30min of O 2 . This RIE etch is used to access a portion of the diamond that is clear of mechanical stress created by polishing, and to further average out the surface roughness via the ICP [19]. The final surface is seen in Fig.1(d) where the RMS surface roughness is ∼150-300pm, depending on the sample, for an area without any of the small circular defects.…”
mentioning
confidence: 99%
“…We then etched the sample from the back-side to a thickness ≈ 3 µm with reactive ion etching (RIE, Unaxis shuttleline), using a combined ArCl 2 [31] and O 2 [19] process. On the thin diamond membrane, we fabricated an array of diamond nanopillars on the top-side by using electronbeam lithography and RIE as described in [19].…”
mentioning
confidence: 99%